• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.371-375
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• 2022

Antimony-doped tin oxide (ATO) thin films, one type of transparent conductive oxide (TCO) films, were prepared on a SiO₂-coated glass substrate with different substrate temperatures by a radio-frequency magnetron sputtering system. Structural, optical, and electrical characteristics of the deposited ATO films were analyzed using X-ray diffraction, scanning electron microscopy, alpha-step, ultraviolet-visible spectrometer, and Hall effect measurement. The substrate temperature during deposition did not affect the basic crystal structure of the films but changed the grain size and film thickness. The optical transmittance of the ATO films deposited at different substrate temperatures was over 70%. The lowest sheet resistance and resistivity were 8.43 × 10² Ω/sq, and 0.3991 × 10^-2 Ω·cm, respectively, and the highest carrier concentration and mobility were 2.36 × 10²¹ cm^-3 and 6.627 × 10^-2 cm²V^-1s^-1, respectively, at a substrate temperature of 400 ℃.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.61-69
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• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

• Journal of Microbiology and Biotechnology
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• v.23 no.3
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• pp.343-350
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• 2013

(R)-[3,5-Bis(trifluoromethyl)phenyl] ethanol is a key chiral intermediate for the synthesis of aprepitant. In this paper, an efficient synthetic process for (R)-[3,5- bis(trifluoromethyl)phenyl] ethanol was developed via the asymmetric reduction of 3,5-bis(trifluoromethyl) acetophenone, catalyzed by Leifsonia xyli CCTCC M 2010241 cells using isopropanol as the co-substrate for cofactor recycling. Firstly, the substrate and product solubility and cell membrane permeability of biocatalysts were evaluated with different co-substrate additions into the reaction system, in which isopropanol manifested as the best hydrogen donor of coupled NADH regeneration during the bioreduction of 3,5-bis(trifluoromethyl) acetophenone. Subsequently, the optimization of parameters for the bioreduction were undertaken to improve the effectiveness of the process. The determined efficient reaction system contained 200mM of 3,5-bis(trifluoromethyl) acetophenone, 20% (v/v) of isopropanol, and 300 g/l of wet cells. The bioreduction was executed at $30^{\circ}C$ and 200 rpm for 30 h, and 91.8% of product yield with 99.9% of enantiometric excess (e.e.) was obtained. The established bioreduction reaction system could tolerate higher substrate concentrations of 3,5- bis(trifluoromethyl) acetophenone, and afforded a satisfactory yield and excellent product e.e. for the desired (R)-chiral alcohol, thus providing an alternative to the chemical synthesis of (R)-[3,5-bis(trifluoromethyl)phenyl] ethanol.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.190-198
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• 2010

Asymmetric model for plasma uniformity by Ar and $CF_4$ was modeled by the antenna structure, the diameter of chamber, and the distance between source and substrate for the development of plasma equipment for 450 mm wafer. The aspect ratio of chamber was divided by diameter, distance from substrate, and pumping port area. And we found the condition with the optimized plasma uniformity by changing the antenna structure. The drift diffusion and quasi-neutrality for simplification were used, and the ion energy function was activated for the surface recombination and etching reaction. The uniformity of plasma density on substrate surface was improved by being far of the distance between substrate wall and chamber wall, and substrate and plasma source. And when the antenna of only 2 turns was used, the plasma uniformity can improve from 20~30% to 4.7%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.129-135
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• 2018

In the stretchable electronic devices, the stretchable substrate is a very essential material which determines the stretchability, performances and durability of the stretchable electronic devices. In particular, the current stretchable materials have hysteresis making difficult to used as sensors and other electronic devices. In this study, we developed a PDMS-Ecoflex hybrid stretchable substrate mixed with PDMS and Ecoflex material in order to increase stretchability and improve hysteresis characteristics. Mechanical behavior of the hybrid substrate was evaluated using a tensile test, and optical transmittance of the hybrid substrate was also measured. As the content of Ecoflex increases, the PDMS-Ecoflex hybrid substrate becomes more flexible, and the elastic modulus decreases. In addition, the PDMS substrate failed a tensile strain of 270%, while the PDMS-Ecoflex hybrid substrate did not fail even at 500% strain indicating excellent stretchability. In the repeated tensile test, the hybrid substrate with 2:1 mixing ratio of PDMS and Ecoflex showed hysteresis. On the other hand, in the case of the hybrid substrate with the mixing ratio of 1:1, hysteresis did not occur at a strain of 50% and 100%. Hence, we developed a stretchable substrate with over 150% stretchability and no hysteresis characteristics. The optical transmittance of the Ecoflex substrate was 68.6%, whereas the transmittances of the hybrid substrate with mixing ratio of 2:1 and 1:1 were 78.6% and 75.4%, respectively. These results indicate that the PDMS-Ecoflex hybrid substrate is a potential candidate for a transparent stretchable substrate.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.110-120
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• 2010

In this paper, we propose a tunable SIW(Substrate Integrated Waveguide) using dielectric screws for eliminating the phase imbalance of large size power distribution networks(PDN). Alumina screws partially inserted into several through holes of the tunable SIW section effectively change the phase shift without S-parameter degradation. ${\pm}33.9^{\circ}$ measured phase imbalance of a large conventional 9 GHz SIW-PDN of $370\;mm{\times}195\;mm$ size has been greatly reduced to ${\pm}4.65^{\circ}$. We expect that the proposed tunable SIW plays an important role for a light-weight, high performance substrate integrated phased array system(Si-PAS) and large size SIW circuit applications.

• Korean Journal of Optics and Photonics
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• v.31 no.6
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• pp.321-327
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• 2020

We investigated the light reflection from thin films coated on substrates. Using a prism with a high refractive index as the incident medium, the phenomena of the total internal reflection (TIR) of the prism/film/substrate system and the light coupling into the optical waveguide formed by the air/film/substrate system were comprehensively studied and compared. If the refractive index of the thin film is greater than that of the substrate, within the TIR region of the substrate, sharp reflection minima occur at specific angles where the waveguide modes are excited, that can be used to accurately measure the refractive index and thickness of a thin film. On the other hand, if the refractive index of the thin film is smaller than that of the substrate, such waveguide modes do not exist. In this case, although not so distinct as a bulk medium, the TIR effect of the thin film is still observable, accompanied by an interference pattern. In this study we analyzed the overall reflection phenomena occurring from prism/film/substrate structures, to investigate the possibility of measuring the refractive index of a thin film in both cases.