• Journal of Advanced Navigation Technology
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• v.14 no.1
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• pp.11-19
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• 2010

In this paper, H-plane filtering-horn antenna operating at millimeter frequency band is proposed with embedded filter and three-layered dielectric lens for frequency selection and maintenance of main beam direction, respectively. The waveguide-typed filter and H-plane sectoral horn antenna are replaced with considerably size-reduced PCB substrate-typed filtering antenna using via fences and several posts. The waveguide-typed filter and H-plane sectoral horn antenna were designed in air-filled waveguide and then combined into size-reduced PCB substrate. For the control of the thickness of dielectric lens, single and multi dielectric lens have been employed. As a result of antenna gain, 8 and 13.5 dBi have been obtained at 41.5 GHz, respectively, from the simulations of single and multi-lens antennas.

• Journal of Powder Materials
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• v.22 no.5
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• pp.326-330
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• 2015

In this study, we demonstrate the photoelectrochromic devices composed of $TiO_2$ and $WO_3$ nanostructures prepared by anodization method. The morphology and the crystal structure of anodized $TiO_2$ nanotubes and $WO_3$ nanoporous layers are investigated by SEM and XRD. To fabricate a transparent photoelectrode on FTO substrate, a $TiO_2$ nanotube membrane, which has been detached from Ti substrate, is transferred to FTO substrate and annealed at $450^{\circ}C$ for 1 hr. The photoelectrode of $TiO_2$ nanotube and the counter electrode of $WO_3$ nanoporous layer are assembled and the inner space is filled with a liquid electrolyte containing 0.5 M LiI and 5 mM $I_2$ as a redox mediator. The properties of the photoelectrochromic devices is investigated and Pt-$WO_3$ electrode system shows better electrochromic performance compared to $WO_3$ electrode.

• Journal of Microbiology and Biotechnology
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• v.25 no.7
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• pp.1114-1118
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• 2015

Microbial fuel cells (MFCs) have gathered attention as a novel bioenergy technology to simultaneously treat wastewater with less sludge production than the conventional activated sludge system. In two different operations of the MFC and aerobic process, microbial growth was determined by the protein assay method and their biomass yields using real wastewater were compared. The biomass yield on the anode electrode of the MFC was 0.02 g-COD-cell/gCOD-substrate and the anolyte planktonic biomass was 0.14 g-COD-cell/g-COD-substrate. An MFC without anode electrode resulted in the biomass yield of 0.07 ± 0.03 g-COD-cell/g-CODsubstrate, suggesting that oxygen diffusion from the cathode possibly supported the microbial growth. In a comparative test, the biomass yield under aerobic environment was 0.46 ± 0.07 g-COD-cell/g-COD-substrate, which was about 3 times higher than the total biomass value in the MFC operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.255-256
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• 2006

The electrical properties of viologen ($VC_8SH$) were studied in terms of the tunneling current characteristics using self-assembling techniques and ultra high vacuum scanning tunneling microscopy (UHV-STM). We fabricated the Au substrate were deposited by thermal evaporation system($420^{\circ}C$). Self-assembled monolayers (SAMs) were prepared on Au(111), which had been thermally deposited onto freshly cleaved, heated mica. The Au substrate was exposed to a 1 mM/L solution of Octanethiol in ethanol for 24 h to form a monolayer. After through rinsing the sample, it was exposed to a 0.1 mM/L solution of $VC_8SH$ in ethanol for 30 min. We measurement of the morphology on the single viologen molecule. The current-voltage (I-V) properties were measured at arbitary configured points on the surface of the sample by using a STS.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.278-284
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• 1995

Thin fihn SnO$_{2}$ Gas Sensor was fabricated by electron-beam evaporation system and the target made by general firing method for the purpose of detecting gas components in air, especially methane gas. SnO$_{2}$ thin film was prepared on the polished alumina substrate which Pt interdigital electrode was precoated. The effects of annealing temperature and substrate temperature on the structural properties of SnO$_{2}$ thin film on glass were investigated using the X-ray diffraction. The good crystalline structure is formed when substrate temperature is 150[.deg. C] and annealing condition is 550[.deg. C], 1[hour]. And the sensing properties at various thickness of the SnO$_{2}$ thin film and the effects of PdCI$_{2}$ addition were also investigated. The good result is showed when the thickness is below 1000[.angs.] and the quantity of PdCI$_{2}$ addition is 4[wt%]. The thickness of SnO$_{2}$ thin film was measured by .alpha.-step and Elliopsometer.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.17-17
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• 2010

Polycrystalline $CuInS_2$ thin films were performed from S/In/Cu Stacked elemental layer(SEL) method with post annealing. In thin method, the thin films were annealed in Vacuum of $10^{-3}$ torr or in S ambient. $CuInS_2$ thin films were manufctured by using the evaporation and the annealing with vacuum quartz furnace of sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate the annealing temperature and characteristics thereof were investigated. The physical properties of the thin film were investigated under various fabrication conditions including the substrate temperature annealing time by XRD, FE-SEM, and Hall measurement system.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.7-10
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• 2006

A GaN-based metal-insulator-semiconductor (MIS) structure has been fabricated by using $BaTa_2O_6$ instead of conventional oxide as insulator gate. The leakage current o) films are in order of $10^{-12}-10^{-13}A/cm^2$ for GaN on $Al_2O_3$(0001) substrate and in order of $10^{-6}-10^{-7}A/cm^2$ for GaN on GaAs(001) substrate. The leakage current of thses films is governed by space-charge-limited current over 45 MV/cm in case of GaN on $Al_2O_3$(0001) substrate and by Poole-Frenkel emission in case of GaN on GaAs(001).

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.438-444
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• 2003

A new method to measure residual stress in micron and nano scale films is described. In the theory it is based on Linear Elastic Fracture Mechanics. And in the techniques it depends on the combined capability of the focused ion beam (FIB) imaging system and of high-resolution digital image correlation (DIC) software. The method can be used for any film material (whether amorphous or crystalline) without thinning the substrate. In the method, a region of the film surface is highlighted and scanning electron images of that region taken before and after a long slot, depth a, is introduced using the FIB. The DIC software evaluates the displacement of the surface normal to the slot due to the stress relaxation by using features on the film surface. To minimize the influence of signal noise and rigid body movement, not a few, but all of the measure displacements are used for determining the real residual stress. The accuracy of the method has been assessed by performing measurements on a nano film of diamond like carbon (DLC) on glass substrate and on micro film of aluminum oxide thermally grown on Fecrally substrate. It is shown that the new method determines the residual stress ${\sigma}_R=-1.73$ GPa for DLC and ${\sigma}_R=-5.45$ GPa for the aluminum oxide, which agree quite well with ones measured independently.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.283-286
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• 1999

Transparent conductive aluminum-doped ZnO(AZO) films Were prepared by a ultrasonic spray pyrolysis method at the substrate temperature below 23$0^{\circ}C$. A vertical type hot wall furnace was used as a reactor in the deposition system. Zinc acetate dissolved in methanol was selected as a precursor. The substrate temperature was varied from 18$0^{\circ}C$to 24$0^{\circ}C$. Aluminum (Al) was doped into ZnO films by incorporating anhydrous aluminum chloride (AlCl$_3$) in the zinc acetate solution. The proportion of the Al in the starting solution was varied from 0 wt % to 3.0 wt %. The crystallographic properties and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The resistivity of the films was measured by the Van der Pauw method, and the mobility and carrier concentration were obtained through the Hall effect measurements Transmittance was measured in the visible region. The effects of substrate temperature and aluminum content in the starling solution on the structural and electrical properties of the AZO films are discussed