• Korean Journal of Materials Research
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• v.22 no.10
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.69-79
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• 2008

A composition consisting of 10 nm-Ni/1 nm-Pd/(30 nm or 70 nm-poly)Si was thermally annealed using rapid thermal for 40 seconds at $300{\sim}1100^{\circ}C$ to improve the thermal stability of conventional nickel monosilicide. The annealed bilayer structure developed into $Ni(Pd)Si_x$, and the resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness were investigated. The silicide, which formed on single crystal silicon, could defer the transformation of $NiSi_2$, and was stable at temperatures up to $1100^{\circ}C$. It remained unchanged on polysilicon substrate compared with the sheet resistance of conventional nickel silicide. The silicides annealed at $700^{\circ}C$, formed on single crystal silicon and 30 nm polysilicon substrates exhibited 30 nm-thick uniform silicide layers. However, silicide annealed at $1,000^{\circ}C$ showed preferred and agglomerated phase. The high resistance was due to the agglomerated and mixed microstructures. Through X-ray diffraction analysis, the silicide formed on single crystal silicon and 30 nm polysilicon substrate, showed NiSi phase on the entire temperature range and mixed phases of NiSi and $NiSi_2$ on 70 nm polysilicon substrate. Through scanning probe microscope (SPM) analysis, we confirmed that the surface roughness increased abruptly until 36 nm on 30 nm polysilicon substrate while not changed on single crystal and 70 nm polysilicon substrates. The Pd-inserted nickel monosilicide could maintain low resistance in a wide temperature range and is considered suitable for nano-thick silicide processing.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• 한국정보통신설비학회:학술대회논문집
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• 2009.08a
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• pp.293-297
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• 2009

In this thesis, design of a VCO(Voltage controlled Oscillator) with a novel tuning mechanism is presented for the Radar system. This circuit, the 9.5 GHz oscillator is designed and implemented by restructuring microstrip resonator to raise Q value and to require a wide frequency tuning range. This product is fabricated on 2.6 Teflon substrate and device is NE722S01. In this paper, The new microstrip resonator VCO is proposed to achieve the characteristic of a wide frequency tuning range. This microstrip resonator VCO shows the phase noise characteristic of -108.3 dBc/Hz at 1 MHz offset from the fundamental frequency, the output power of 5.7 dBm and the second harmonic suppression of -38 dBc for the VCO are obtained. The manufacture VCO shows a frequency tuning range of 193.8 MHz. The proposed micro trip resonator VCO can be used for X-band Radar System with required tuning range.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.37.2-37.2
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• 2010

Electrostatic spray deposition is an innovative coating technique that produces fine, uniform, self-dispersive (due to the Coulombic repulsion), and highly wettable, atomized drops. Copper-indium salts are dissolved in an alcohol-based solvent, which is then electrostatically sprayed onto a moderately heated, molybdenum-coated substrate. Solvent flowrates range from 0.02 to 5 ml/hr under applied voltages of 1 to 20 kV yielding drop sizes around a few hundred nanometers. By comparing the scanning electron miscrscope images of coated samples, the substrate temperature, applied voltage, solvent flowrate, and nozzle-substrate distance are demonstrated to be the primary parameters controlling coating quality. Also, the most stable electrostatic spray mode that reliably produces uniform and fine drops is the cone-jet mode with a Taylor cone issuing from the nozzle.

• ETRI Journal
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• v.32 no.2
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• pp.327-329
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• 2010

A fully integrated small form-factor HBT power amplifier (PA) was developed for UMTS Tx applications. For practical use, the PA was implemented with a well configured bottom dimension, and a CMOS control IC was added to enable/disable the HBT PA. By using helix-on-pad integrated passive device output matching, a chip-stacking technique in the assembly of the CMOS IC, and embedding of the bulky inductive lines in a multilayer substrate, the module size was greatly reduced to 2 mm ${\times}$ 2.2 mm. A stage-bypass technique was used to enhance the efficiency of the PA. The PA showed a low idle current of about 20 mA and a PAE of about15% at an output power of 16 dBm, while showing good linearity over the entire operating power range.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.91-94
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• 2004

We report on the opto-electronic properties of red, green, and blue poly (fluorene) co-polymer light-emitting devices (PLEDs) fabricated on a flexible plastic substrate. The plastic substrate used has a multi-layer structure with water vapor and oxygen transmission rates of less than $10^{-5}$ g/$cm^2$-day-atm and $10^{-7}$ cc/$cm^2$-day-atm, respectively. We obtained a wide range of color gamut and a maximum emission efficiency of 0.7, 10, and 1.7 cd/A for red, green, and blue PLEDs, respectively. Finally, a simple equivalent circuit model is proposed to simulate PLED current density-voltage characteristics.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.956-962
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• 1992

The predominant sintering mechanisms of low firing temperature ceramic substrate which consists of borosilicate glass containing alumina as a filler are the rearrangement of alumina particles and the viscous flow of glass powders. In this system, sintering condition depends on the volume ratio of alumina to glass and on the particle size. When the substrate contains about 35 vol% alumina filler and the average alumina particle size is 4 $\mu\textrm{m}$, the best firing condition is obtained at the temperature range of 900∼1000$^{\circ}C$. The extensive rearrangement behavior occurs at these conditions, and the optimum sintering condition is attained by smaller size of glass particles, too. The formation of cristobalite during sintering causes the difference of thermal expansion coefficient between the substrate and Si chip. This phenomenon degradates the capacity of Si chip. Therefore, the crystallization should be prevented. In the alumina filled borosilicate glass system, the crystallization does not occur. This effect may have some relation with aluminum ions in alumina. For aluminum ions diffuse into glass matrix during sintering, functiong as network former.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.91-95
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• 2017

Recently, infrared (IR) spectrometers have been required in various fields such as environment, safety, mobile, automotive, and military. This IR dispersive sensor detection method of substances is widely used. In this study, we fabricated a silicon (Si) prism-based near infrared (NIR) spectrometer utilizing micro electro mechanical system (MEMS) technology. Si prism-based NIR spectrometer utilizing MEMS technology consists of upper, middle, and lower substrates. The upper substrate passes through the incident IR ray selectively. The middle substrate, acting as a prism, disperses and separates the incident IR beam. The lower substrate has an amorphous Si (a-Si)-based bolometer array to detect the IR spectrum. The fabricated Si prism-based NIR spectrometer utilizing MEMS technology has the advantage of a simple structure, easy fabrication steps, and a wide NIR region operating range.

• Journal of Ocean Engineering and Technology
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• v.15 no.4
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• pp.60-65
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• 2001

Thermal spray coating is formed by a process in which melted particles flying with high speed towards substrate, then crash and spread on the substrate surface cooled and solidified in a very short time, Stacking of the particles makes coating. In this study, the exfoliation of $Al_2$O$_3$ and Ni-4.5wt.%Al thermally sprayed coating which were deposited by an atmospheric plasma spray apparatus are investigated using an AE method. A tensile test is conducted on notch specimens in a stress range below the elastic limit of substrate. The wave forms of AE generated from the three coating specimens can be classified by FFT analysis into two types which low frequency(type I waveform is considered to corresponds exfoliation of coating layers and type II waveform corresponds the plastic deformation of notch tip or the resultant fracture of coating. The fracture of the coating layers can estimate by AE event and amplitude, because AE features increase when the deformation generates.