• Title/Summary/Keyword: Substrate peak

Search Result 586, Processing Time 0.045 seconds

The physical properties of several HTS coated conductors

  • Lee, Nam-Jin;Oh, Sang-Soo;Song, Kyu-Jeong;Ha, Dong-Woo;Kim, Ho-Sup;Ha, Hong-Soo;Ko, Rock-Kil;Kim, Tae-Hyung;Kim, Sang-Cheol;Yu, Kwon-Kuk;Moon, Seung-Hyun;Youm, Do-Jun
    • Progress in Superconductivity and Cryogenics
    • /
    • v.9 no.4
    • /
    • pp.19-23
    • /
    • 2007
  • The superconducting properties of several HTS coated conductors (CC), which had different tape structures, fabricated by KERI, X and Y institutes were compared. We have fabricated the $high-J_c$ SmBCO CC, which has 273.5 A/cm, $1.2MA/cm^2$ and 93.5 K for $I_C,\;J_C\;and\;T_{c-zero}$, respectively, using the EDDC (Evaporation using Drum in Dual Chambers) process. Both X and Y institutes CCs, however, were purchased. The n-values of KERI, X and Y institutes CCs are 58.5, 40.7 and 31.5 in $V=1{\sim}10{\mu}V$ criterion, respectively. The in-field properties of $I_C$ at 77K were investigated and the $J_C(B)/J_C(0G)$ at 0.5 T with $B{\perp}$ ab-plane are 0.31, 0.19 and 0.24 for KERI, X and Y institutes CCs, respectively. From the $I_C-{\theta}-B$ measurement, we observed that the ab-plane of ReBCO phase was tilted for the ab-plane of substrate in the KERI and X institutes CCs. The tilted angle is about 5 degree. We confirmed that the peak shift (as an inclined texture) was observed by X-ray (102) pole figures of the SmBCO for the KERI CC.

A Study on the Reaction of Al-1% Si with Ti-silicide (Al-1% Si층과 Ti-silicide층의 반응에 관한 연구)

  • Hwang, Yoo-Sang;Paek, Su-Hyon;Song, Young-Sik;Cho, Hyun-Choon;Choi, Jin-Seog;Jung, Jae-Kyoung;Kim, Young-Nam;Sim, Tae-Un;Lee, Jong-Gil;Lee, Sang-In
    • Korean Journal of Materials Research
    • /
    • v.2 no.6
    • /
    • pp.408-416
    • /
    • 1992
  • Stable TiS$i_2$was formed by RTA on single-Si and on poly-Si. Subsequently, an Al-1% Si layer with 600-nm thick was deposited on top of the TiS$i_2$, Finally, the specimens were annealed for 30min at 400-60$0^{\circ}C$in $N_2$ambient. The thermal stability of Al-1% Si/TiS$i_2$bilayer and interfacial reaction were investigated by measuring sheet resistance, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The composition and phase of precipitates formed by the reaction of Al-1% Si with Ti-silicide were studied by energy dispersive spectroscopy (EDS), X-ray diffraction (XRD). In the case of single-Si substrate the reaction of Al-1% Si layer with TiS$i_2$layer resulted in precipitates, consuming all TiS$i_2$layer at 55$0^{\circ}C$. On the other hand, the disappearance of TiS$i_2$on poly-Si occurred at 50$0^{\circ}C$ and more precipitates were formed by the reaction of Al-1% Si/TiS$i_2$on potty-Si substrate than those of the reaction on single-Si substrate. This phenomenon resulted from the fact that Ti-silicide formed on poly-Si was more unstable than on single-Si by the effect of grain boundary. By EDS analysis the precipitates were found tobe composed of Ti, Al, and Si. X-ray diffraction showed the phase of precipitates to be theT$i_7$A$l_5$S$i_12$ternary compound.

  • PDF

Annealing Effects on Properties of ZnO Nanorods Grown by Hydrothermal Method (수열합성법으로 성장된 산화아연 나노막대의 특성 및 열처리 효과)

  • Jeon, Su-Min;Kim, Min-Su;Kim, Ghun-Sik;Cho, Min-Young;Choi, Hyun-Young;Yim, Kwang-Gug;Kim, Hyeoung-Geun;Lee, Dong-Yul;Kim, Jin-Soo;Kim, Jong-Su;Lee, Joo-In;Leem, Jae-Young
    • Journal of the Korean Vacuum Society
    • /
    • v.19 no.4
    • /
    • pp.293-299
    • /
    • 2010
  • Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.

Plasma-Assisted Molecular Beam Epitaxy of InXGa1-XN Films on C-plane Sapphire Substrates (플라즈마분자선에피탁시법을 이용한 C-면 사파이어 기판 위질화인듐갈륨박막의 에피탁시 성장)

  • Shin, Eun-Jung;Lim, Dong-Seok;Lim, Se-Hwan;Han, Seok-Kyu;Lee, Hyo-Sung;Hong, Soon-Ku;Joeng, Myoung-Ho;Lee, Jeong-Yong;Yao, Takafumi
    • Korean Journal of Materials Research
    • /
    • v.22 no.4
    • /
    • pp.185-189
    • /
    • 2012
  • We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

Characterization of Optical Properties of Light-Emitting Diodes Grown on Si (111) Substrate with Different Quantum Well Numbers and Thicknesses

  • Jang, Min-Ho;Go, Yeong-Ho;Go, Seok-Min;Yu, Yang-Seok;Kim, Jun-Yeon;Tak, Yeong-Jo;Park, Yeong-Su;Jo, Yong-Hun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.313-313
    • /
    • 2012
  • In recent years there have been many studies of InGaN/GaN based light emitting diodes (LEDs) in order to progress the performance of luminescence. Many previous literatures showed the performance of LEDs by changing the LED structures and substrates. However, the studies carried out by the researchers so far were very complicated and sometimes difficult to apply in practice. Therefore, we propose one simple method of changing the thickness and the numbers of multiple quantum wells (MQWs) in order to optimize their effects. In our research, we investigated electrical and optical properties by changing the well thickness and the number of quantum well (QW) pair in LED structures by growing the structure -inch Si (111) wafer. We defined the samples from LED_1 to LED_3 according to MQW structure. Samples LED_1, LED_2 and LED_3 consist of 5-pair InGaN/GaN (3.5 nm/ 4.5 nm), 5-pair InGaN/GaN (3 nm/4.5 nm) and 7-pair InGaN/GaN (3.5 nm/4.5 nm), respectively. We characterized electrical and optical properties by using electroluminescence (EL) measurement. Also, Efficiency droop was analyzed by calculating external quantum efficiency (EQE) with varying injection current. The EL spectra of three samples show different emission wavelength peaks, FWHM and the blueshift of wavelength caused by screening the internal electric field because of the effect of different MQW structure. The results of optical properties show that the LED_2 sample reduce the internal electric field in QW than LED_1 from EL spectra. the increase in the number of QW pairs reduces the strain and increase the In composition in MQW. And, the points of efficiency droop's peak show different trend from LED_1 to LED_3. It is related with the carrier density in active region. Thus, from the results of experiments, we are able to achieve high performance LEDs and a reduction of efficiency droop and emission wavelength blueshift by optimizing MQWs structure.

  • PDF

Effect of Different Rates of Ethanol Additive on Fermentation Quality of Napiergrass (Pennisetum purpureum)

  • Zhang, Lei;Yu, C.Q.;Shimojo, M.;Shao, T.
    • Asian-Australasian Journal of Animal Sciences
    • /
    • v.24 no.5
    • /
    • pp.636-642
    • /
    • 2011
  • The effect of different rates of ethanol additive on fermentation quality of napiergrass (Pennisetum purpureum) and residual water soluble carbohydrate were studied in the experiment. The addition rate of ethanol was 0%, 1.5%, 2.5%, 3.5%, 4.5% on fresh weight of napiergrass. The laboratory silos were kept in the room, then were opened on 1, 3, 5, 7, 14, 30 days after ensiling and the changes of silage quality were analyzed, respectively. There was a fast and large reduction in pH from the 5th day of ensiling to below 4.2 except for the 4.5% treatment. After five days the pH of silage decreased slowly and the pH of the ethanol additions was lower than the control. Lactic acid content of ethanol treatments increased significantly (p<0.05) from the 5th day of ensiling, reaching the highest value on either the 7th day or 14th day. The ethanol additive inhibited the break down of silage protein and the ammonia nitrogen content of ethanol addition silage was significantly (p<0.05) lower than the control after 30 days of ensiling. Within the initial first day of ensiling the water soluble carbohydrate content declined quickly. The efficiency of water soluble carbohydrate usage was higher in silage with ethanol than in the control. The acetic acid of ethanol treatment was significantly (p<0.05) lower than control on first and 14th day, but there was no significant (p>0.05) difference among the ethanol addition silages. The volatile fatty acids content of silage increased gradually from the first day of ensiling and reached the peak on 14th day or 30th day and the content of ethanol addition treatment was significantly (p<0.05) lower than the control. The experimental results indicated that adding ethanol inhibited the use of protein and water soluble carbohydrate of aerobic bacteria and reduced the silage losses during the early stage of ensiling and thus supplied more fermentation substrate for lactic acid bacteria and improved the fermentation quality of napiergrass.

Performance evaluation using BER/SNR of wearable fabric reconfigurable beam-steering antenna for On/Off-body communication systems (On/Off-body 통신시스템을 위한 직물소재 웨어러블 재구성 빔 스티어링 안테나의 BER/SNR 성능 검증)

  • Kang, Seonghun;Jeong, Sangsoo;Jung, Chang Won
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.16 no.7
    • /
    • pp.4842-4848
    • /
    • 2015
  • This paper presents a comparison of communication performance between the reconfigurable beam-steering antenna and the omni-directional (loop) antenna during standstill and walking motion. Both omni-directional and reconfigurable antennas were manufactured on the same fabric (${\varepsilon}_r=1.35$, $tqn{\delta}=0.02$) substrate and operated around 5 GHz band. The reconfigurable antenna was designed to steer the beam directions. To implement the beam-steering capability, the antenna used two PIN diodes. The measured peak gains were 5.9-6.6 dBi and the overall half power beam width (HPBW) was $102^{\circ}$. In order to compare the communication efficiency, both the bit error rate (BER) and the signal-to-noise ratio (SNR) were measured using a GNU Radio Companion software tool and user software radio peripheral (USRP) devices. The measurement were performed when both antennas were standstill and walking motion in an antenna chamber as well as in a smart home environment. From these results, the performances of the reconfigurable beam steering antenna outperformed that of the loop antenna. In addition, in terms of communication efficiencies, in an antenna chamber was better than in a smart home environment. In terms of movement of antennas, standstill state has better results than walking motion state.

The Crystallization and the Photoluminescence Characteristics of ZnO Thin Film Fabricated by Sol-gel Method (Sol-gel 법으로 제작된 ZnO 박막의 결정화 및 PL 특성에 관한 연구)

  • Choi Byeong Kyun;Chang Dong Hoon;Kang Seong Jun;Yoon Yung Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.43 no.2 s.344
    • /
    • pp.8-12
    • /
    • 2006
  • We have fabricated ZnO thin film on $Pt/TiO-2/SiO_2/Si$ substrate by the sol-gel method and have investigated the effect of annealing temperature on the structural morphology and optical properties of ZnO thin films. The ZnO thin film annealed at $600^{\circ}C$ exhibits the highest c-axis orientation and its FWHM of X-ray peak is $0.4360^{\circ}C$. In the results of surface morphology investigation of ZnO thin film by using Am it is observed that ZnO thin film annealed at $600^{\circ}C$ exhibits the largest UV (ultraviolet) exciton emission at around 378nm and the smallest visible emission at around 510nm among these of ZnO thin films annealed at various temperatures. It is deduced that the ZnO thim film annealed at $600^{\circ}C$ is formed most stoichiometrically since the visible emission at around 510nm comes from oxygen vacancy or impurities.

Design and Implementation of Microstrip Quadrature Coupler and High Power Transmitting/Receiving Switch Using Dynamic Loading Technique for 1-Tesal MRI System (동적 부하 기술을 이용한 1-Tesla 자기공명 영상 시스템용 마이크로 스트립 quadrature coupler 및 고출력 송수신 스위치의 설계 및 제작)

  • 류웅환;이미영;이흥규;이황수;김정호
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.36D no.3
    • /
    • pp.1-11
    • /
    • 1999
  • It is now common practice to utilize the quadrature RF coils to improve the signal-to-noise ratio (SNR) in the Magnetic Resonance Imaging (MRI) System. In addition, to make such an available SNR improvement, it is mandatory to use a well-designed quadrature coupler, which facilitates a perfect 3-dB coupling and quadrature-phase shift. However, the four ports matching condition has to be well considered during the RF excitation and the signal detection period. This work investigates the effects of such a mismatching condition (especially, due to patient) from the analysis, simulation, and real implementation and firstly proposes dynamic loading technique for a quadrature coupler and transmitting/receiving switch module to minimize a patient mismatching and enhance a system reliability. Also, we designed and implemented the quadrature coupler and transmitting/receiving switch module using microstrip. As a result, the SNR of our MRI system using the microstrip quadrature coupler and transmitting/receiving switch module with dynamic load increases 3 dB compared with the old one using USA quadrature switch. Also, the power capability of quadrature coupler and transmitting/receiving switch module is 5-kw peak power. Considering power loss and reduction of size, we used a RT/duroid 6010 substrate with high permittivity and for simulation we use Compact Software.

  • PDF

Inhibitory Effect of Grapefruit Seed Extract Mixture on the Physiological Function of Botrytis cinerea (식물성 항균소재 처리가 Botrytis cinerea의 생리기능에 미치는 저해효과)

  • Cho Sung-Hwan;Kim Chul-Hwan;Park Woo-Po
    • Food Science and Preservation
    • /
    • v.11 no.3
    • /
    • pp.417-423
    • /
    • 2004
  • Botanical antimicrobial agent-grapefruit seed extract mixture (BAAG) have an unknown compounds which exhibit the antibiotic activities aganist microorganisms including bacteria and fungi. We have examined the effects of BAAG on the physiological function of Botrytis cinerea which was isolated from necrotic lesions of decayed fruits and vegetables such as cucumbers, grapes, tomatoes, and red peppers during storage. In the results of enzymatic activities related to the energetic metabolism there was no inhibitory effect of BAAG on the activities of several enzymes in vitro including glucose 6-phosphate dehydrogenase and malate dehydrogenase, while there was inhibitory effect of BAAG on the activities of hexokinase and succinate dehydrogenase. O-nitrophenyl-$\beta$-D-galactopyranoside(ONPG), the artificial substrate of $\beta$-galactosidase was hydrolyzed in the presence of BAAG, indicating that the membrane was pertubated by the BAAG. From the results we suggested that the antibiotic activity of BAAG is due to the change of membrane permeability of the cell. BAAG was fractionated and purified by silica gel and sephadex column chromatography. Among active fractions two peaks were identified as naringin and limonin when they were analyzed by by NMR and Fast atomic bombardment.