• 한국전기전자재료학회논문지
• /
• 제21권5호
• /
• pp.463-467
• /
• 2008

Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• 한국전기전자재료학회논문지
• /
• 제20권11호
• /
• pp.965-968
• /
• 2007

In this study we investigated the variation of the substrate temperatures using RF sputtering to identify the effect on the structure and electrical properties by c-axis orientation of ZnO thin film. ZnO thin films were prepared on Al/Si substrate. In our experimental results, ZnO thin film at $300^{\circ}C$ was well grown with (002) peak of ZnO thin film, the thin film showed the high resistivity with the value of $5.9{\times}10^7\;{\Omega}cm$ and the roughness with 27.06 nm. As increased the substrate temperatures, the grain size of ZnO thin films was increased. From these results, we could confirm the suitable substrate temperature of ZnO thin films for FBAR(film bulk acoustic resonator).

• 대한전자공학회논문지SD
• /
• 제42권1호
• /
• pp.9-17
• /
• 2005

공진주파수 스펙트럼법을 이용하여 ZnO 와 AIN 압전박막의 임피던스 특성 및 전기기계결합계수 특성에 대해 조사하였다. 압전박막의 두께가 얇을수록 전체적인 임피던스 응답 피크의 크기가 감소하였으며, 기판의 두께가 얇을수록 응답 피크의 모드 수가 감소하는 것이 관찰되었다. 입력 Kt² 값으로부터 평가된 Kt² 값을 통해 압전박막의 두께보다 기판의 두께 변화에 대한 영향이 더 큼을 알 수 있었고, 기판의 acoustic 임피던스에 의해서도 Kt² 값이 감소함을 알 수 있었다. 전극 효과가 첨가되면 임피던스 응답 피크의 크기가 감소하였으며, 전극의 acoustic 임피던스가 커짐에 따라 응답피크는 더 작아졌다. 공진주파수 스펙트럼법에서 전극은 질량부하로 고려되기 때문에 전극 효과가 첨가된 경우 Keff² 값은 증가하며, 전극의 acoustic 임피던스가 크면 그 효과는 더 커졌다. 공진주파수 스펙트럼법을 이용한 시뮬레이션을 통해 기판, 압전체, 전극으로 이루어진 composite 공진기의 특성 분석과 설계까지도 가능함을 알 수 있었다.

• 한국세라믹학회지
• /
• 제39권12호
• /
• pp.1171-1176
• /
• 2002

MgO 박막은 성장용 기판 또는 완충층으로 이용되고 있으며, 근래에는 AC PDP의 유전체 보호막으로써 그 활용도가 넓어지고 있다. 본 연구에서는 전자빔증착법에 의해 MgO 박막을 증착시켜 증착변수에 따른 MgO 박막의 성장특성을 연구하였다. 실험은 증착기판, 증착속도, 기판온도 등의 변화에 따른 MgO 박막의 우선배향성, 표면형상을 통하여 MgO 박막의 물성을 알아보았다. 실험결과, Si 기판에서는 증착속도가 빠를수록 (111)우선배향된 박막을 얻을 수 있었고, 기판온도가 상온일때는 (200)에서 기판온도가 증가할수록 (220)의 peak이 관찰되었다. 비정질인 slide galss 기판일 경우에는 상온에서 MgO 박막의 (200)면의 우선배향을 얻을수 있었고, 온도에 의해 배향성이 (200)면에서 (111)면으로 바뀌는 것을 알 수 있었다. 또한 MgO 박막의 배향성과 특성에 대한 관계를 조사하였다.

• 한국전기전자재료학회논문지
• /
• 제18권2호
• /
• pp.187-191
• /
• 2005

A ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions at a calcine temperature of 700 $^{\circ}C$ and sintering temperature of 1300 $^{\circ}C$ in order to deposit ZnGa$_2$O$_4$ phosphor thin film at various temperature using rf magnetron sputtering system. A ZnGa$_2$O$_4$ phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor(RTP) at 700 $^{\circ}C$, for 15 sec. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target and thin film showed the main peak (311) direction. ZnGa$_2$O$_4$ thin film has better crystalization due to as function of increasing substrate and annealing temperature. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor thin film showed the main peak 420 nm wavelength and the maximum intensity at the substrate temperature of 500 $^{\circ}C$ and annealing temperature of 700 $^{\circ}C$, for 15 sec.

• 전기화학회지
• /
• 제3권3호
• /
• pp.157-161
• /
• 2000

기판의 변화가 박막전극의 전기화학적 특성에 미치는 영향을 조사하기 위해 박막 $LiCoO_2$ 양극을 alumina, chemically etched-Si그리고 flat-Si기판 위에 증착하였다. Alumina기판의 경우 산소 분위기, $800^{\circ}C$ 30분간 열처리 후 내부에 균열이 존재하는 매우 큰 결정이 형성되었으나 flat-Si 기판의 경우에는 미세하며 균일한 결정이 관찰되었다. Flat-Si 기판 위에 증착된 박막은 alumina또는 식각된 Si 기판의 경우에 비하여 peak potential증감 및 고 전류밀도 방출 능면에서 매우 우수한 특성을 나타내었으며 이는 열처리 후 형성된 결정립의 크기, 표면 형상 및 전류 집전체의 전기저항 차이에 기인한 것으로 생각되었다.

• 한국재료학회지
• /
• 제22권10호
• /
• pp.508-512
• /
• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

• 한국재료학회지
• /
• 제30권10호
• /
• pp.558-565
• /
• 2020

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al³⁺ ions of relatively small ion radius are substituted for Zn²⁺ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al_2p and O_ll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10¹⁹ cm^-3 of carrier concentration, 8.4 cm^-2/V·s of mobility and 1.2 × 10^-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2000년도 춘계학술대회논문집B
• /
• pp.428-433
• /
• 2000

The consolidation behavior of multicomponent particles prepared by the flame hydrolysis deposition process is examined to identify the effects of Si substrate temperature. To fabricate multi-component particles, a vapor-phase ternary mixture of $SiCl_4(100 cc/min),\;BCl_3(30cc/min)\;and\;POCl_3,(5cc/min)$ was fed into a coflow diffusion oxy-hydrogen flame burner. The doped silica soot bodies were deposited on silicon substrates under various deposition conditions. The surface temperature of the substrate was measured by an infrared thermometer. Changes in the chemical states of the doped silica soot bodies were examined by FT-IR(Fourier-transformed infrared spectroscopy). The deposited particles on the substrate were heated at $1300^{\circ}C$ for 3h in a furnace at a heating rate of 10K/min. Si-O-B bending peak has been found when surface temperature exceeds $720^{\circ}C$. Correspondingly, the case with substrate temperatures above loot produced good consolidation result.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.905-908
• /
• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.