• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.407-410
• /
• 1987

A layout design concept which suppress the substrate current generated during the switching transients of an CMOS inverter is presented. The amount of hot carriers and the peak value of substrate current can be reduced by changing the device geometry ratio of driver and load device of an CMOS inverter.

• Korean Journal of Materials Research
• /
• v.22 no.9
• /
• pp.450-453
• /
• 2012

In crystalline solar cells, the substrate itself constitutes a large portion of the fabrication cost as it is derived from semiconductor ingots grown in costly high temperature processes. Thinner wafer substrates allow some cost saving as more wafers can be sliced from a given ingot, although technological limitations in slicing or sawing of wafers off an ingot, as well as the physical strength of the sliced wafers, put a lower limit on the substrate thickness. Complementary to these economical and techno-physical points of view, a device operation point of view of the substrate thickness would be useful. With this in mind, BC-BJ Si and GaAs solar cells are compared one to one by means of the Medici device simulation, with a particular emphasis on the substrate thickness. Under ideal conditions of 0.6 ${\mu}m$ photons entering the 10 ${\mu}m$-wide BC-BJ solar cells at the normal incident angle (${\theta}=90^{\circ}$), GaAs is about 2.3 times more efficient than Si in terms of peak cell power output: 42.3 $mW{\cdot}cm^{-2}$ vs. 18.2 $mW{\cdot}cm^{-2}$. This strong performance of GaAs, though only under ideal conditions, gives a strong indication that this material could stand competitively against Si, despite its known high material and process costs. Within the limitation of the minority carrier recombination lifetime value of $5{\times}10^{-5}$ sec used in the device simulation, the solar cell power is known to be only weakly dependent on the substrate thickness, particularly under about 100 ${\mu}m$, for both Si and GaAs. Though the optimum substrate thickness is about 100 ${\mu}m$ or less, the reduction in the power output is less than 10% from the peak values even when the substrate thickness is increased to 190 ${\mu}m$. Thus, for crystalline Si and GaAs with a relatively long recombination lifetime, extra efforts to be spent on thinning the substrate should be weighed against the expected actual gain in the solar cell output power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.2
• /
• pp.109-115
• /
• 2005

The study of Oxygen Vacancy on SnO$_2$ thin films grown by thermal chemical vapor deposition were investigated with different substrate temperature. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks were changed with increasing substrate temperature. It was concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects. Hall effect measurements showed that the carrier density was decreased as increasing deposition time from 10 to 30 min., but increased for the deposition of 60 min.

• ETRI Journal
• /
• v.36 no.6
• /
• pp.1062-1065
• /
• 2014

A novel substrate-integrated waveguide (SIW) cavity-backed slot antenna is proposed in this study to achieve enhanced-gain performance. The peak gain is remarkably improved with the use of an SIW cavity and metallic superstrate. The superstrate comprises a single rectangular slot window and two half-wavelength patches. The gain can be enhanced by combining the in-phase radiating fields. Further, the 10 dB bandwidth of the proposed antenna ranges from 2.32 GHz to 2.49 GHz, which covers the wireless local area network band. The measured peak gain is 9.44 dBi at 2.42 GHz.

• Journal of Korean Vacuum Science & Technology
• /
• v.2 no.1
• /
• pp.49-54
• /
• 1998

The effect of deposition paratmeters on the solid-phase crystallization of amorphous silicon films deposited by plasma-enhanced chemical vapor deposition has been investigated by x-ray diffraction. The amorphous silicon films were prepared on Si(100) wafers using SiH4 gas with and without H2 dilution at the substrate temperatures between 12$^{\circ}C$ and 38$0^{\circ}C$. The R. F. powers and the deposition pressures were also varied. After crystallizing at $600^{\circ}C$ for 24h, the films exhibited (111), (220), and (311) x-ray diffraction peaks. The (111) peak intensity increased as the substrate temperature decreased, and the H dilution suppressed the crystallization. Increasing R.F. powers within the limits of etching level and increasing deposition pressures also have enhanced the peak intensity. The peak intensity was closely related to the deposition rate, which may be an indirect indicator of structural disorder in amorphous silicon films. Our results are consistent with the fact that an increase of the structural disorder I amorphous silicon films enhances the grain size in the crystallized films.

• Journal of the Korean Electrochemical Society
• /
• v.3 no.4
• /
• pp.200-203
• /
• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.

• Journal of Advanced Marine Engineering and Technology
• /
• v.32 no.3
• /
• pp.461-467
• /
• 2008

It was studied the effect of a pre-deposited ultrathin Al layer as part of a buffer layer for the growth of GaN. AlN buffer layers were deposited on a Si(111) substrate using an RF sputtering technique, followed by GaN using hydride vapor phase epitaxy (HVPE). Several atomic layers of Al were deposited prior to AlN sputtering and the samples were compared with the others grown without pre-deposition of Al. And it was also studied the influence of AlN buffer layer thickness on the growth of GaN. The peak wavelength of the photoluminescence (PL) was varied with increasing the thickness of the GaN and AlN layers. The optimum thickness of AlN on a Si(111) substrate with an ultrathin Al layer was about $260{\AA}$. Scanning electron microscope (SEM) images showed coalescent surface morphology and X-ray diffraction (XRD) showed a strongly oriented GaN(0002) peak.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1720-1723
• /
• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

• Korean Journal of Materials Research
• /
• v.31 no.1
• /
• pp.38-42
• /
• 2021

In this study, high temperature wetting analysis and AZ80/Ti interfacial structure observation are performed for the mixture of AZ80 and Ti, and the effect of Al on wetting in Mg alloy is examined. Both molten AZ80 and pure Mg have excellent wettability because the wet angle between molten droplets and the Ti substrate is about 10° from initial contact. Wetting angle decreases with time, and wetting phenomenon continues between droplets and substrate; the change in wetting angle does not show a significant difference when comparing AZ80-Ti and Mg-Ti. As a result of XRD of the lower surface of the AZ80-Ti sample, in addition to the Ti peak of the substrate, the peak of TiAl3, which is a Ti-Al intermetallic compound, is confirmed, and TiAl3 is generated in the Al enrichment region of the Ti substrate surface. EDS analysis is performed on the droplet tip portion of the sample section in which pure Mg droplets are dropped on the Ti substrate. Concentration of oxygen by the natural oxide film is not confirmed on the Ti surface, but oxygen is distributed at the tip of the droplet on the Mg side. Molten AZ80 and Ti-based compound phases are produced by thickening of Al in the vicinity of Ti after wetting is completed, and Al in the Mg alloy does not affect the wetting. The driving force of wetting progression is a thermite reaction that occurs between Mg and TiO2, and then Al in AZ80 thickens on the Ti substrate interface to form an intermetallic compound.

• Electrical & Electronic Materials
• /
• v.10 no.3
• /
• pp.217-225
• /
• 1997

In this study, the PVDF organic thin film was fabricated by the physical vapor deposition method to be dry-process. The distance of heat source and substrate was 5[cm] and the temperature of substrate was 30[.deg. C], when the pressure had reached 2.0 x 10$^{-5}$ [Torr], the temperature of heat source was reached to 285[.deg. C] to heat at 6-8[.deg. C/min] rate, the shutter was opened and deposition was started. TG-DTA(Thermogravimetric-Differential Thermal Analysis) spectrum of PVDF pellets showed that endothermic peak arose at 170[.deg. C] and exothermic peak at 524[.deg. C], but that of thin PVDF film showed that endothermic peak arose at 145[.deg. C] and exothermic peak at 443[.deg C]. The current density was increased linearly with increasing voltage but increased nonlinearly with higher electric field than 250[kV/cm] and activation energy was about 0.667[eV] at the temperature of 30-90[.deg. C].