• 한국표면공학회지
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• 제36권1호
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• pp.1-8
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• 2003

In general, the microstructure in thin films was known to evolve in similar manner according to the energy striking the condensing film at similar homologous temperature, Th for the materials of the same crystal structure. The fundamental factors affecting particle energy are a function of processing parameters such as working pressure, bias voltage, target/sputtering gas mass ratio, cathode shape, and substrate orientation. In this study, Al, Cu, Pt films of the same crystal structure of face centered cubic (FCC) have been prepared under various processing parameters. The influence of processing variables on the microstructures and residual stress states in the films has been studied.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.203-205
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• 1996

DLC(Diamond-Like Carbon) films were prepared by Inductively Coupled Plasma(ICP) CVD system. It was confirmed that the field emission characteristics are closely related to the richness of C-H bonding incorporated in the DLC. According to Fowler-Nordheim equation, it is thought that the ability of DLC to emit electron at relatively low voltage is due to the field enhancement caused by the nodules of ${\sim}100nm$ size on the surface of DLC. The electric field to start field emission was about $1.4{\times}10^9V/m$ in case of DLC film deposited at input power of 400W and substrate bias of -100V.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.140-141
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• 2007

The arc ion plating (AIP) technique has been used widely for thin coating in the area of surface engineering. The TiN coating is important in the field of dies, cutting tools and other mechanical parts. When forming the TiN films by AIP technique, the processing parameters such as arc power, bias voltage, working pressure, temperature of substrate and pre-treatment affected the adhesion respectively. The results of scratch test revealed that the adhesion strength was influenced by arc power most strongly. And a sequence of the importance of each parameters has been obtained. The crystal structure and cross-section of TiN films are also be investigated.

• 한국표면공학회지
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• 제25권3호
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• pp.133-143
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• 1992

Titanium nitride(TiN) films have been prepared by HCD plasma enhanced reactive ion plating. Density and temperature of the plasma generated by the HCD were investigated. It was shown that parameters such as the substrate bias voltage(0 350V) and N2 flow rate(10 180SCCM) influenced the growth, the growth, the microstructure and the color tone of the film mostly. In order to study the interface region, surface analysis by AES combined with sputter depth profiling was performed. Microhardness of the coated TiN films were measured by micro Vickers hardness tester. Also, the effect of coating parameters on composition, coating surface and fracture morphology, grain size and growth rate were examined.

• 한국표면공학회지
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• 제25권5호
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• pp.223-233
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel by D.C. magnetron sputtering using Al target and Ti plate. The properties of (Ti, Al)N films such as composition, microhardness, grain size, crystal structure were investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The higher bias voltage to substrate and the smaller input of N2 gas showedthe increased microhardness and the finer grain size of the films. The results obtained from this study show, it is belived, that the (Ti, Al)N film by D.C.magne-tron sputtering is promising in the wear resistance use.

• 한국자기학회지
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• 제5권5호
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• pp.618-622
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• 1995

We studied the effects of Pt and Cr addition in a new Co-Cr-P-Pt alloy system with the coercivity higher than 2000 Oe even when they were deposited without substrate heating and bias voltage. The coercivity of the films increased from 1000 to 2000 Oe or higher by addition of 12 at.%Pt. The variation of the anisotropy field with increasing Pt content was similar to that of the coercivity. This indicate that the increase of the coercivity might be associated with increase of the anisotropy field with Pt addition. With the addition of Cr, the coercivity of the films increased up to 8 at.%Cr and the coercive squareness of the films decreased. The angular variation of coercivity deviated at a lower angle from domain wall motion mode as the Cr content increases. From these result, it is believed that the grain isolation of the films is enhanced with the addition of Cr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.112-112
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• 2009

Temperature dependence of the ferroelectric properties of poly(vinylidefluoride-trifluoroethylene) copolymer thin films are studied with various insulators such as $SrTa_2O_6$ and $La_2O_3$. Thin films of poly(vinylidene fluoridetrifluoroethylene) 75/25 copolymer were prepared by chemical solution deposition on p-Si substrate. Capacitance-voltage (C-V) and current density (J-V) behavior of the Au/P(VDF-TrFE)/Insulator/p-Si structures were studied at ($150-200\;^{\circ}C$) and dielectric constant of the each insulators were measured to be about 15 at $850\;^{\circ}C$ for 10 minutes. Memory window width at 5 V bias the MFIS(metal-ferroelectric-insulator-semiconductor) structure with as deposited films was about 0.5 V at high temperature ($200\;^{\circ}C$). And the memory window width increased as voltage increased from 1 V to 5 V.

• 조명전기설비학회논문지
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• 제30권1호
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• pp.1-7
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• 2016

With a collimated $CO_2$ laser beam, the bidirectional current switching was realized in a two-terminal electronic device based on a highly resistive vanadium dioxide($VO_2$) thin film. A $VO_2$ thin film was grown on a $Al_2O_3$ substrate by a pulsed laser deposition method. For the fabrication of a two-terminal electronic device, the $VO_2$ thin film was etched by an ion beam-assisted milling method, and the $VO_2$ device, of which $VO_2$ patch width and electrode separation were 50 and $100{\mu}m$, respectively, was fabricated through a photolithographic method. A bias voltage range for stable bidirectional current switching was found by using the current-voltage property of the device measured in a current-controlled mode. The transient responses of bidirectionally switched currents were analyzed when the laser was modulated at a variety of pulse widths and repetition rates. A switching contrast was measured as ~3333, and rising and falling times were measured as ~39 and ~21ms, respectively.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• 한국전자파학회논문지
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• 제27권10호
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• pp.917-925
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• 2016

슈미트 트리거 로직(Schmitt Trigger Logic)은 디지털 회로의 노이즈에 대한 내성을 향상시키기 위해 히스테리시스 특성을 보이는 게이트를 제안한 설계 방법이다. 슈미트 트리거 특성을 보이는 설계 방법 중 최근에 제안된 substrate bias를 조정하여 구현하는 Dynamic Threshold voltage MOS(DTMOS) 방법을 사용할 경우, 게이트 수를 늘이지 않고 내성을 향상 시킬 수 있는 설계방법이나, 범용 CMOS 공정에서 구현하여 시뮬레이션으로 예상하는 성능을 얻을 수 있는지는 검증되지 않았다. 본 연구에서는 $0.18{\mu}m$ CMOS 공정에서 DTMOS 설계 방법을 구현하여 히스테리시스 특성을 측정하여 검증하였다. DTMOS 슈미트 트리거 버퍼, 인버터, 낸드, 노어 게이트 및 간단한 디지털 로직 회로를 제작하였으며, 히스테리시스 특성, 전력 소모, 딜레이 등의 특성들을 관찰하고, 일반적인 CMOS 게이트로 구현된 회로와 비교하였다. 노이즈에 대한 내성이 향상되는 것을 Direct Power Injection(DPI) 실험을 통해 확인하였다. 본 논문을 통해 제작된 DTMOS 슈미트 트리거 로직은 10 M~1 GHz 영역에서 전자파 내성이 향상된 것을 확인할 수 있었다.