• Animal cells and systems
• /
• v.5 no.4
• /
• pp.267-274
• /
• 2001

Calpains are a family of cysteine proteases existing primarily in two forms designated by the $Ca^{2+}$ concentration needed for activation in vitro, $\mu$-calpain (calpain-I) and m-calpain (calpain-II). The physiologica1 roles of calpains remain unclear. Many groups have proposed a role for calpains In apoptosis, but their patterns of activation are not well characterized. Calpains have been implicated in neutrophil apoptosis, glucocorticoid-induced thymocyte apoptosis, as well as many other apoptotic pathways. Calpain activation in apoptosis is usually linked upstream or downstream to caspase activation, or in a parallel pathway alongside caspase activation. Calpains have been suggested to be involved in DNA fragmentation (via endonuclease activation), but also as effector proteases that cleave cellular proteins involved in DNA repair, membrane associated proteins and other homeostatic regulatory proteins. Recently, our laboratory demonstrated $\mu$-calpain activation in NAD(P)H: quinone oxidoreducatse 1 (NQO1)-expressing cells after exposure to $\beta$-lapachone, a novel quinone and potential chemo- and radio-therapeutic agent. Increased cytosolic $Ca^{2+}$ in NQO1-expressing cells after $\beta$-lapachone exposures were shown to lead to $\mu$-calpain activation. In turn, $\mu$-calpain activation was important for substrate proteolysis and DNA fragmentation associated with apoptosis. Upon activation, $\mu$-calpain translocated to the nucleus where it could proteolytically cleave PARP and p53. We provided evidence that $\beta$-lapachone-induced, $\mu$-calpain stimulated, apoptosis did not involve any of the known caspases; known apoptotic caspases were not activated after $\beta$-lapachone treatment of NQO1-expressing cells, nor did caspase inhibitors have any effect on $\beta$-1apachone-induced cell death. Elucidation of processes by which $\beta$-1apachone-stimulated $\mu$-calpain activation and calpains ability to activate endonucleases and induce apoptosis independent of caspase activity will be needed to further develop/modulate $\beta$-lapachone for treatment of human cancers that over-express NQO1.

• YAKHAK HOEJI
• /
• v.52 no.3
• /
• pp.182-187
• /
• 2008

Salicylate (SA) was shown to alleviate insulin resistance. Here, we showed that SA inhibited Ser731 phosphorylation of insulin receptor substrate 1 (IRS1) and S6 kinase activation, and enhanced tyrosine phosphorylation of IRS1 in response to insulin or amino acid. Experiments using a cJun N-terminal kinase (JNK)-deficient cell and an IRS1 JNK-binding mutant showed that JNK is not required for Ser731 phosphorylation. A two-week treatment of obese mice with SA resulted in decreased Ser731 phosphorylation and enhanced insulin signaling. These results suggest that SA enhances insulin signaling by inhibiting Ser731 phosphorylation of IRS1.

• Bulletin of the Korean Chemical Society
• /
• v.24 no.12
• /
• pp.1856-1858
• /
• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.89-93
• /
• 1995

Effects of hydrogenation in amorphous silicon rile growths on Solid Phase Crystallization (SPC) was investigated using x-ray diffractometry, energy dispersive Spectroscopy, and Raman spectrum. Interdiffusion of barium(Ba) and aluminum(Al) compounds of corning substrate was observed in both of rf sputtering and LFCVD films under the low temperature(580$^{\circ}C$) annealing. Low degree of crystallinity resulted from the interdiffusion was obtained. Highly applicable degree of crystallinity was obtained through the mechanical damage induced surface activation on amorphous silicon films. X-ray diffraction intensity of (111) orientation was used to characterize the degree of crystallinity of SPC. Nucleation and growth rate in SPC could be controllable through the employed surface treatment. IIydrogenated LPCVD films showed the superior crystallinity to non-hydrogenated sputtering films. Insignificant effects of activation treatment in sputtered film was of activation treatment in sputtered film was observed on SPC.

• 한국초전도학회:학술대회논문집
• /
• v.10
• /
• pp.132-135
• /
• 2000

Magneto-resistances of the YBa$_2$Cu$_3$O$_{7-{\delta}}$ based coated conductors fabricated on the tilted single crystalline Ni substrates and RABiTS (rolling assisted bi-axially textured substrate) were measured under various magnetic fields. The activation energies of vortices were estimated from them by fitting equation of p = p$_o$ exp(-U(H,T)/k$_B$T). When currents flew in the rolling direction for the case of the tilted single crystalline YBCO on the RATS, the activation energies were similar to those of c-axis normal YBCO films on the SrTiO$_3$ single crystal substrates [5] and were slightly larger than those of the RABiTS coated conductors. On the contrary, for the currents flowing in the transverse direction, the magnetoresistances show double transitions in the temperature with much smaller activation energies.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.95-97
• /
• 2004

We studied a low temperature ion doping process for poly-Si Thin Film Transistor (TFT) on plastic substrates. The ion doping process was performed using an ion shower system, and subsequently, excimer laser annealing (ELA) was done for the activation. We have studied the crystallinity of Si surface at each step using UV-reflectance spectroscopy and the sheet resistance using 4-point probe. We found that the temperature has increased during ion shower doping for a-Si film and the activation has not been fulfilled stably because of the thermal damage against the plastic substrate. By trying newly a pulsed ion shower doping, the ion was efficiently incorporated into the a-Si film on plastic substrate. The sheet resistance decreased with the increase of the pulsed doping time, which was corresponded to the incorporated dose. Also we confirmed a relationship between the crystallinity and the sheet resistance. A sheet resistance of 300 ${\Omega}$/sq for the Si film of 50nm thickness was obtained with a good reproducibility. The ion shower technique is a promising doping technique for ultra low temperature poly-Si TFTs on plastic substrates as well as those on glass substrates.

• Proceedings of the KWS Conference
• /
• 2002.10a
• /
• pp.487-492
• /
• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• Electrical & Electronic Materials
• /
• v.10 no.3
• /
• pp.217-225
• /
• 1997

In this study, the PVDF organic thin film was fabricated by the physical vapor deposition method to be dry-process. The distance of heat source and substrate was 5[cm] and the temperature of substrate was 30[.deg. C], when the pressure had reached 2.0 x 10$^{-5}$ [Torr], the temperature of heat source was reached to 285[.deg. C] to heat at 6-8[.deg. C/min] rate, the shutter was opened and deposition was started. TG-DTA(Thermogravimetric-Differential Thermal Analysis) spectrum of PVDF pellets showed that endothermic peak arose at 170[.deg. C] and exothermic peak at 524[.deg. C], but that of thin PVDF film showed that endothermic peak arose at 145[.deg. C] and exothermic peak at 443[.deg C]. The current density was increased linearly with increasing voltage but increased nonlinearly with higher electric field than 250[kV/cm] and activation energy was about 0.667[eV] at the temperature of 30-90[.deg. C].

• Journal of the Korean institute of surface engineering
• /
• v.27 no.2
• /
• pp.109-117
• /
• 1994

Effect of ultrasonic agitation on the contact properties was studied in Ni electroless plating and Pd activation. P-type Si bare wafers were used as substrate and DMAB was used as reducing agent due to its good electrical properties, solderability and compatibility to substrate. In activation, high density Pd nuclei of small size were formed during ultra-sonic agitation compared to that of no stirring. In electroless plating, the plating rate was enhanced by 30∼90% by using ultrasonic agitation. In elecrtoless plating, inhibitor is the most effective additives in ultrasonic agitation. In this experi-ment, thiourea was used as inhibitor. The less the amount of the inhibitor, the more ultrasonic agitation efficiency. It is confirmed by SEM that Ni-B films formed by ultrasonic were coarser, less porous, and denser than those of no stirring. In ultrasonic agitation, boron content of the films was more than those of no stirring. In this case, the more DMAB concentration, the higher the temperature, the less pH, the more boron content. Resistivity of the films formed by ultrasonic agitation was higher than that of no strirring. As the content of boron was increased, the resistivity of the films was increased exponentially.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.420-420
• /
• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.