• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.49-56
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• 2002

In this study, the InGaP epilayers were grown on the exact and the $2^{\circ}$, $6^{\circ}$, $10^{\circ}$ of cut GaAs substrates by metal-organic vapor phase epitaxy, and the effects of interfacial elastic strains determined by the substrate offcut angle upon the resulting dislocation density of epilayer were investigated for the first time. The elastic strains were obtained from lattice mismatch and lattice misfit by TXRD, and the dislocation densities from epilayer x-ray FWHM. For the offcut angle range used in this study, the elastic strain was maximum and x-ray FWHM minimum at offcut angle $6^{\circ}$. From 11K PL measurements, PL wavelength was found to decrease with an increase of offcut angle. PL intensity was maximum at offcut angle $6^{\circ}$. TEM results showed that the electron diffraction pattern was of typical zincblende structure, and that the dislocation density was minimum for substrate offcut angle $6^{\circ}$. The results obtained in this study, along with the device fabrication process and beam characteristics, clearly demonstrated that the optimum substrate offcut angle for the InGaP/GaAs heterostructures is $6^{\circ}$.