• 전기학회논문지P
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• 제57권4호
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• pp.408-411
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• 2008

As to this research is new structure of the semiconductor substrate heating apparatus. The fast thermoresponsive according to the direct heating structure of the heating plate layer adhering closely to the floor side of a substrate and the fast heat loss minimization can be accomplished. Moreover, the contact area of the sheath heater, which is the heating plate layer built-in heating apparatus, is increased, so that it has more heating valid area. For this, it adheres closely to the substrate, in which the photosensitive film is coated and the heating plate layer, adhering closely to the floor side of a substrate the mica layer which adheres closely to the floor side of the upper heating plate layer in order to minimize an insulation and heat loss, and the lower part of the mica layer and it is comprised of the floor plate layer. The heating plate layer forms the continued groove portion over the floor side whole. The sheath heater for heating a substrate is inserted with the groove portion and the heating plate layer is comprised. It is confirmed that by using the new substrate heating structure, the temperature change of the heating plate against the time is observed. Then, there is the electric power saving effect of about 40% in comparison with the existing method.

• 전기학회논문지P
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• 제58권1호
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• pp.67-71
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• 2009

This research is a new structure of the semiconductor substrate heating apparatus in which the assembly and expansion are possible. The fast thermo-responsive according to the direct heating structure of the heating plate layer adhering closely to the floor side of a substrate and the fast heat loss minimization can be accomplished. Moreover, the contact area of the sheath heater, which is the heating plate layer built-in heating apparatus, is increased, so that it has more heating valid area. There is no problem with the deformation interpreted in the state where it assembles the block of a several of the simulation result structure, the safety, and the stress. In addition, it is confirmed that building a large-size heating block is possible since the temperature deflection of the manufactured plate is lower than the standard value.

• 한국초전도ㆍ저온공학회논문지
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• 제25권2호
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• pp.14-18
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• 2023

Superconducting layers deposited on the metal substrate using the pulsed laser deposition process (PLD) play a crucial role in exploring new applications of superconducting wires and enhancing the performance of superconducting devices. In order to improve the superconducting property and increase the throughput of superconducting wire fabricated by pulsed laser deposition, high temperature heating device is needed that provides high temperature stability and strong durability in high oxygen partial pressure environments while minimizing performance degradation caused by surface contamination. In this study, new heating device have been developed for PLD process that deposit and growth the superconducting material continuously on substrate using reel-to-reel transportation apparatus. New heating device is designed and fabricated using iron-chromium-aluminum wire and alumina tube as a heating element and sheath materials, respectively. Heating temperature of the heater was reached over 850 ℃ under 700 mTorr of oxygen partial pressure and is kept for 5 hours. The experimental results confirm the effectiveness of the developed heating device system in maintaining a stable and consistent temperature in PLD. These research findings make significant contributions to the exploration of new applications for superconducting materials and the enhancement of superconducting device performance.

• 대한기계학회논문집B
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• 제22권5호
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• pp.563-572
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• 1998

An experimental study of hot filament chemical vapor deposition(HFCVD) has been carried out for the fabrication of diamond thin film. Of particular interest is the measurement of deposition uniformity on large substrates. Experimental apparatus including a vacuum chamber, heating elements, etc. has been designed and manufactured. Deposition profiles for different pretreatment powders and different flow rates have been measured in conjunction with the measurement of substrate temperature distribution on a large substrate surface. As the flow rate increases, deposition rate increases, however, the crystallinity becomes worse. Higher growth rate has been found on the region closer to the center location where substrate temperature is higher. The crystallinity has been improved as gas flow rate decreases. The growth rate and morphology of deposition were identified by SEM and the existence of diamond phase was proved by Raman spectroscopy.

• 한국표면공학회지
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• 제25권6호
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• pp.287-292
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• 1992

Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating were analyzed through the x-ray photo spectroscopy (XPS) and ellipsometer measurements, etc. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method at low substrate temperature (<10$0^{\circ}C$) exhibited excellent physical and electrical properties. The very uniform and good quality silicon nitride thin films were obtained. The characteristics of electron cyclotron resonance plasma were inferred from the analyzed results of the deposited films.

• 한국표면공학회지
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• 제23권4호
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• pp.218-224
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• 1990

Silicon nitride thin(SiNx) is deposited onto 3 inch silicon wafor using ECR plasma apparatus. For the two different plasma extraction windows size, the thin films which were deposited by changing the SiH4/N2 gas fole at at 1.5mTorr without substrate heating are analyzed through the XPS and wlliposometer measurements. The very uniform and good quality silicon nitride thin film were obtained with the analyzed results of the deposited films, and particularly, ion temperature perpendicular to the magnetic filed was nearly same as the neutral gas temperature. The large amount of plasma loss in the transport process following magnetic field lines could be seen from the plasma emission intensity measurements.