• Journal of Ginseng Research
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• v.12 no.2
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• pp.158-163
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• 1988

P. ginseng seedlings treated with GA,2,4-D and B-9 (N,N-dimethylsuccinamic acid) were grown under dark. Growth efficiencies ($E_1$ = St/Ro, $E_2$ = St1(Ro-Rt), $E_3$ = (Ro- Rt)/ Ro where St. Ro and Rt are shoot weight, initial root weight and root weight at time 1. respectiv$E_1$y) and other r$E_1$ated factors and their interr$E_1$ationship were investigated. $E_1$ and $E_3$ showed quadratic r$E_1$ation with temperature change while $E_2$ showed negative linear r$E_1$ation. $E_1$ depended on more $E_3$ component than $E_2$ component. The values of $E_2$ and $E_3$ are almost same. $E_2$ was greater than that reported previously suggesting large variation between roots. GA greatly increased $E_2$ and $E_3$ in supraoptimum temperature range while B-9 greatly decreased $E_3$ in all temperature range and $E_2$ in suboptimum range. Shoot weight showed highly significant positive linear corr$E_1$ation with substrate amount in most cases of PGR and temperature and with respiration loss in some cases. Respiration loss showed significant linear corr$E_1$ation positiv$E_1$y with $E_1$ and $E_3$ and negativ$E_1$y with $E_2$ only in suboptimal temperature range.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.155-159
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• 2005

In this report, Polymer light emitting diodes (PLEDs) with an ITO/PEDOT:PSS/MEH-PPV/Al structure were prepared by spin coating method on the glass substrate patterned ITO (indium tin oxide), using PEDOT:PSS(poly(3,4=ethylenedioxythiophene):poly(styrene sulfolnate)) as the hole transfer material and MEH-PPV(poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenvinylene)) having a different concentration (0.1, 0.3, 0.5, 0.7, 0.9, 1.5 wt$\%$) as the emitting material. The electrical and optical properties of the prepared PLED samples were investigated. The good electrical and optical properties were observed for the PLED samples with a MEH-PPV concentration ranging from 0.5 to $0.9 wt\%$. However, the current and luminance values for PLED sample with $1.5 wt\%$ of MEH-PPV decreased greatly. The maximum luminance and light efficiency for the PLEDs with concentration of $0.5 wt\%$ MEH-PPV were $409 cd/m^2$ and 4.90 Im/W at 9 V, respectively. The emission spectrums were found to be $560{\~}585 nm$ in wavelength showing orange color.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.108-113
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• 2013

Chalcopyrite material $CuInSe_2$ (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite $CuInSe_2$ thin films were successfully made after selenization at the substrate temperature of $550^{\circ}C$ in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 $mA/cm^2$ FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1034-1041
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• 2012

In this paper, a compact circularly polarized metamaterial patch antenna using the -1 mode that is induced by the composit right-left handed(CRLH) transmission line is proposed. Basically, since the -1 mode is the same properties with the +1 mode of the conventional patch antenna, the circular polarization(CP) is realized. If two orthogonal -1 modes are excited with $90^{\circ}$ phase difference, the CP property can be obtained. In order to obtain two orthogonal modes and $90^{\circ}$ phase difference, 4 mushroom structures having the shape of triangle are employed and the inter-digital gaps are optimized, respectively. The fabricated antenna is based on RT/duroid5880 substrate and the total area of the 4 mushrooms is $0.161{\lambda}_0{\times}0.161{\lambda}_0$. It is confirmed that the center frequency of the proposed antenna is measured as 2.845 GHz and it operates from 2.830 GHz to 2.850 GHz. In addition, the antenna maintains the CP property from 2.842 GHz to 2.847 GHz at the peak gain and the measured radiation efficiency is 46 %.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.12
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• pp.1343-1351
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• 2010

In this paper, a novel patch antenna based on the metamaterial CRLH(Composite Right- and Left-Handed) structure is designed, implemented, and measured. Contrary to the standard microstrip patch's fundamental resonance mode of half-wavelength or its positive multiple, the proposed antenna shows the in-phase electric field over the entire antenna. The proposed antenna has a desired omni-directional field pattern which is typical characteristic of $\lambda/4$ monopole antenna, and also shows the merit of low profile. HFSS(High Frequency Structure Simulator) of Ansoft which is based on the FEM(Finite Element Method) is used to simulate the proposed antenna. FR-4 substrate of thickness 1.6 mm and relative permitivity 4.4 is used for the proposed antenna implementation. The implemented antenna showed VSWR (Voltage Standarding Wave Ratio)$\leq$2 for the frequency band from 2.63 GHz to 2.655 GHz which is used for S-DMB (Satellite-Digital Multimedia Broadcasting) service. And measured peak gain and efficiency are 2.65 dBi and 81.14 %, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.12
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• pp.1059-1068
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• 2016

This paper proposes slow wave structure(SWS) utilized to increase antenna gain of printed dipole antenna(PDA) and to suppress sidelobe level simultaneously, and makes sure of electrical characteristics of the antenna according to parameter variations of components of the slow wave structure. The printed slow wave structure which is composed of a dielectric substrate and a metal rods array is located on excited direction of the PDA, affecting the radiation pattern and its intensity. Parasitic elements of the metal rods are arrayed in narrow consistent gap and have a tendency to gradually decrease in length. In this paper, array interval, element length, and taper angle are selected as the parameter of the parasitic element that effects radiation characteristics. Magnitude and phase distribution of the electrical field are observed and analyzed for each parameter variations. On the basis of these results, while the radiation pattern is analyzed, array methods of parasitic elements of the SWS for high gain characteristics are provided. The proposed antenna is designed to be operated at the Wifi band(5.15~5.85 GHz), and parameters of the parasitic element are optimized to maximize antenna gain and suppress sidelobe. Simulated and measured results of the fabricated antenna show that it has wide bandwidth, high efficiency, high gain, and low sidelobe level.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.25-36
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• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• Journal of the Korean Chemical Society
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• v.50 no.2
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• pp.163-177
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• 2006

Alpha Nickel hydroxide samples have been synthesized by electrodeposition on platinum and nickel substrates at current densities of 1, 5, 6, 7 and 10 mAcm？2 at a controlled temperature of 30.00 oC from Ni(NO3)2 bath. Platinum substrate shows a tendency to incorporate less nitrate ions with increase in current density thus producing less hydroxy-deficient nickel hydroxide layers. On the whole the interlayer distance (d003) is found to be inversely proportional to the amount of nitrate ions incorporated in-between the lattice. For the first time we have observed a decrease in lattice spacing with increase in concentration of intercalant (anions) and the reason for lattice contraction is attributed to the columbic attractive forces exerted by the oppositely charged nitrate ion and positively charged slabs. The Infrared spectra of the samples with expanded interlayers show two types of OH vibrations corresponding to hydrogen bonded and non-hydrogen bonded OH groups whereas the contracted interlayers show only hydrogen-boded OH groups. Although the faradaic efficiency is found to increase with increase in applied current there is a local minimum at 6.0 mAcm？2 current density on both platinum and nickel substrates. In this manuscript, GC-MS data is provided which clearly demonstrates the electrodeposited nickel hydroxide sample to consist of huge amount of carbonate ions although the electrolyte solution in nickel nitrate.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.601-608
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• 2020

In this work, Ag₃PO₄/In₂S₃ nanocomposites with low loading of In₂S₃ (5-15 wt %) are fabricated by two step chemical precipitation approach. The microstructure, composition and improved photoelectrochemical properties of the as-prepared composites are studied by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photocurrent density, EIS and amperometric i-t curve analysis. It is found that most of In₂S₃ nanoparticles are deposited on the surfaces of Ag₃PO₄. The as-prepared Ag₃PO₄/In₂S₃ composite (10 wt%) is selected and investigated by SEM and TEM, which exhibits special morphology consisting of lager size substrate (Ag₃PO₄), particles and some nanosheets (In₂S₃). The introduction of In₂S₃ is effective at improving the charge separation and transfer efficiency of Ag₃PO₄/In₂S₃, resulting in an enhancement of photoelectric behavior. The origin of the enhanced photoelectrochemical activity of the In₂S₃-modified Ag₃PO₄ may be due to the improved charge separation, photocurrent stability and oriented electrons transport pathways in environment and energy applications.