• 한국해양학회지
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• v.26 no.4
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• pp.340-349
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• 1991

From tidal current measurements on a tidal sand ridge in the Gyeonggi Bay from August 24 to September 29, 1987, tidal current velocities at 1.0 m above bottom (U/SUB 100/) and boundary shear velocities (U/SUB */) are calculated. The mean speeds of tidal current for flood and ebb over the entire period are 56.3 cm/sec and 63.7 cm/sec in mid-depth (9.0 m above bottom), and 43.9 cm/sec and 43.8 cm/sec in near-bottom (1.5 m above bottom). The exponent(P) in "power law", which is generally used for extrapolation from the mid-depth current velocity to that at the top of nationally logarithmic layer, is estimated to be 0.15 in the study area. Using logarithmic velocity profile assumption, mean values of U/SUB 100/ and U/SUB */ are calculated to be 41.4 cm/sec and 2.39 cm/sec, respectively. The mean value of U/SUB */ (2.39 cm/sec) is much higher than the critical shear velicity (U/SUB *c/) of 1.40 cm/sec reported by Choi (1990). and thus, it can be suggested that the most of sands on the tidal sand ridge in the study area are easily eroded and transported for the greater part of tidal period.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.5 no.2
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• pp.143-150
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• 1993

Shallow sub-bottom reflection recorders are obtained using dual frequency (15/100 KHz). The main goal of this study is to enhance the resolving power and penetration for the sub-bottom reflection of the sub-marine seismic exploration. The Fresnel zones of spherical waves for the near-field are of great importance to reach the high resoluton. In case a target to detects than the Fresnel radius, a diffraction hyperbola on the recorder is observed. A larger attenuation of sand makes less penetration than the smaller attenuation of silt and clay. It is found that the selective frequency as well as the seismic energy generation is the most important factors for sub-marine exploration. This technique of using dual frequency sub-marine exploration may be applied to detect the sub-bottom sludge soil, ocean contamination and marine archaeological relics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.1-6
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• 2004

Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 ％. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

• Journal of the Korean Geophysical Society
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• v.9 no.4
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• pp.427-441
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• 2006

Sub-bottom profiler and deep tow imaging system were performed in the KODOS (Korea Deep Ocean Study) area in order to find out controlling factor in nodule formation from the relationship between distribution of Mn nodules and micro-scale topographic change. Although abundance of r- and t- types nodules increase on the seafloor of thin upper transparent layer, no significant correlation was found between the thickness of upper transparent layer and total nodule abundance in the study area. Our results show that distribution pattern of nodule, including abundance, continuity, and facies, can vary with small scale in similar abyssal plain.

• Journal of the Korean Geophysical Society
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• v.6 no.4
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• pp.269-276
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• 2003

Sub-bottom profile were conducted in Chungju Regulation Lake by use of ground penetrating radar(GPR). The survey area covers approximately 1,000,000 $m^2$ and total survey line length is about 5km and more. GPR surveys with GPS system were made across and transverse direction of the lake. From the survey results of GPR, it could be possible to distinguish the gravel and/or sand dominant bed from silt and/or clay material dominant bed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.519-525
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• 2015

Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.

• The Journal of the Acoustical Society of Korea
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• v.34 no.6
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• pp.444-454
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• 2015

Measurements of bottom backscattering strengths in a frequency range of 6-14 kHz were made on the shallow water off the southern Gyeonggi Bay in Yellow Sea in May 2013, as part of the KIOST-HYU joint acoustics experiment. Geological surveys for the experimental area were performed using multi-beam echo sounder, sparker system, and grab sampling to investigate the bottom topography, sub-bottom profile and composition of surficial sediment, respectively. In this paper, the backscattering strengths as a function of grazing angle (in range of $28^{\circ}{\sim}69^{\circ}$) were estimated and compared to the predictions obtained by Lambert's law and APL-UW scattering model. Finally, the effects of geoacoustic parameters corresponding to the experimental area on the backscattering strengths are discussed.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

• Ocean and Polar Research
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• v.24 no.4
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• pp.483-490
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• 2002

Detailed investigations on both submarine and subaerial volcaniclastic deposits around Dokdo were carried out to identify geomorphologic characteristics, stratigraphy, and associated depositional processes of Dokdo caldera. Dokdo volcano has a gently sloping summit (about 11km in diameter) and relatively steep slope (basal diameter is about 20-25 km) rising above sea level at about 2,270m. We found ragged, elliptical-form of Dokdo caldera with a diameter of about 2km estimated by Chirp (3-11 kHz) sub-bottom profile data and side scan sonar data for the central summit area of Dokdo volcano. We interpreted that the volcaniclastic deposits of Dokdo unconformably consist of the Seodo (west islet) and the Dongdo(east islet) formations based on internal structure, constituent mineral composition, and bedding morphology. The Seodo Formation mainly consisted of massive or inversely graded trachytic breccias (Unit S-I), overlain by fine-grained tuff (Unit S-II), which is probably supplied by mass-wasting processes resulting from Dokdo caldera collapse. The Dongdo Formation consists of alternated units of stratified lapilli tuff and inversely graded basaltic breccia (Unit D-I, Unit D-III, and Unit D-V), and massive to undulatory-bedded basaltic tuff breccias (Unit D-II and Unit D-IV) formed by a repetitive pyroclastic surge and reworking processes. Although, two islets of Dokdo are geographically near each other, they have different formations reflecting their different depositional processes and eruptive stages.