• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.1
• /
• pp.33-37
• /
• 2013

In this research, we investigated the effect of mole concentration of precursor on morphological, structural and optical properties of ZnO nanorods. ZnO nanorods were hydrothermally grown on c-plane sapphire substrates in aqueous solution which contains zinc nitrate hexahydrate and hexamethylenetetramine at 90oC in the precursor range of 0.01 M to 0.025 M. With the increase of mole concentration, length and diameter of ZnO nanorods increased. In all the conditions, the growth direction of rods was longitudinally c-axis direction. From the strong emission peak at 380 nm of PL spectra at room temperature, we could confirm that the crystal quality of ZnO nanorods is good to emit radiative recombination spectra.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.2
• /
• pp.23-30
• /
• 1999

The relationships between morphological structures and residual stress behaviors of polyimide thin films depending on isomeric diamines were investigated. For this study, Poly(phenylene biphenyltetracarboximide) (BPDA-PDA) and poly(oxydiphenylene biphenyltetracarboximide) (BPDA-ODA) films were prepared from their isomeric diamines: 1,3-phenylene diamine (1,3-PDA) 1,4-phenylene diamine (1.4-PDA), 3,4'-oxydiphenylene diamine (3,4'-ODA), and 4,4'-oxydiphenylene diamine (4,4'-ODA), respectively. For those films, residual stresses were detected in-situ during thermal imidization of the isomeric polyimide as a function of processing temperature over the range of 25~$400^{\circ}C$ using. Thin Film Stress Analyzer (TFSA). In comparison, residual stress of BPDA-1.4PDA having better in-plain orientation and chain order was the lowest value of 7MPa whereas those of BPDA-1,3-PDA, BPDA-3,4'-ODA, and BPDA-4,4'-ODA were in the range of 40-50MPa. Conclusively, the effect of morphological nature (chain rigidity, chain order, orientation) and chain mobility relating to the g1ass transition behavior on the residual stress of isomeric polyimide thin films wart analyzed.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.2
• /
• pp.37-41
• /
• 2017

Cuprous oxide ($Cu_2O$) is one of the potential candidates as an absorber layer in ultra-low-cost solar cells. $Cu_2O$ is highly desirable semiconducting oxide material for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and high absorption coefficient that absorbs visible light of wavelength up to 650 nm. In addition, $Cu_2O$ has other several advantages such as non-toxicity, low cost and also can be prepared with simple and cheap methods on large scale. In this work, we deposited the $Cu_2O$ thin films by electrodeposition on gold coated $SiO_2/Si$ wafers. We changed the process conditions such as pH of the solution, applied potential on working electrode, and solution temperature. Finally, we confirmed the structural properties of the thin films by XRD and SEM.

• Journal of the Microelectronics and Packaging Society
• /
• v.26 no.1
• /
• pp.23-28
• /
• 2019

The Titanium oxide ($TiO_2$) is an attractive ceramic material which shows non-toxic, high refractive index, catalytic activity and biocompatibility, and can be fabricated at a low cost due to its high chemical stability and large anisotropy. $TiO_2$ nanoparticles have been prepared by sol-gel method. The pH of solution can affect the $TiO_2$ crystallinity during the formation of nanoparticles. The prepared nanoparticles were characterized using Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray diffraction, photoluminescence spectroscopy in order to investigate their structural and photoluminescence properties. Through these analysis, the size of $TiO_2$ nanoparticles were found to be smaller than 5 nm. As the crystallinity of the nanoparticles increased, the emission of PL in the 550 nm region increased. Therefore, luminescence characteristics can be improved by controlling the crystallinity of the $TiO_2$ nanoparticles.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.3
• /
• pp.83-87
• /
• 2023

In the field of electronics and semiconductor technology, innovative semiconductor material research to replace Si is actively ongoing. However, while research on alternative materials is underway, there is a significant lack of studies regarding the relationship between 2D materials used as channels in transistors, especially parasitic resistance, and RF (radio frequency) applications. This study systematically analyzes the impact on electrical performance with a focus on various transistor structures to address this gap. The research results confirm that access resistance and contact resistance act as major factors contributing to the degradation of semiconductor device performance, particularly when highly scaled down. As the demand for high-frequency RF components continues to grow, establishing guidelines for optimizing component structures and elements to achieve desired RF performance is crucial. This study aims to contribute to this goal by providing structural guidelines that can aid in the design and development of next-generation RF transistors using 2D materials as channels.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.3
• /
• pp.88-93
• /
• 2023

As the demand for High Bandwidth Memory (HBM) increases and the handling capability of larger wafers expands, ensuring reliable Total Thickness Variation (TTV) measurement for stacked wafers becomes essential. This study presents the design of a measurement module capable of measuring TTV across the entire area of a 300mm wafer, along with estimating potential mechanical measurement errors. The module enables full-area measurement by utilizing a center chuck and lift pin for wafer support. Modal analysis verifies the structural stability of the module, confirming that both the driving and measuring parts were designed with stiffness exceeding 100 Hz. The mechanical measurement error of the designed module was estimated, resulting in a predicted measurement error of 1.34 nm when measuring the thickness of a bonding wafer with a thickness of 1,500 ㎛.

• Journal of the Microelectronics and Packaging Society
• /
• v.31 no.3
• /
• pp.38-41
• /
• 2024

In semiconductor manufacturing, the alignment process is fundamental to all manufacturing steps, and alignment errors are inevitably introduced. These alignment errors can lead to issues such as increased resistance, signal delay, and degradation. This study systematically analyzes the changes in the electrical characteristics of the bonding interface when alignment errors occur in metal interconnect and bonding structures. The results show that current density tends to concentrate at the edges of the bonding interface, with the middle part of the interface being particularly vulnerable. As alignment errors increase, the current path redistributes, causing previously concentrated current areas to disappear and an effect similar to an increase in contact area, resulting in a decrease in resistance in certain vulnerable parts. These findings suggest that proposing structural improvements to eliminate the vulnerable parts of the bonding interface could lead to interconnect with significantly improved resistance performance compared to existing structure. This study clarifies the impact of alignment errors on electrical characteristics, which is expected to play a crucial role in optimizing the electrical performance of semiconductor devices and enhancing the efficiency of the manufacturing process.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
• /
• v.27 no.2
• /
• pp.63-70
• /
• 2021

As the government strengthens its policy of separating and discharging packaging materials, consumers are increasingly dissatisfied. In order to increase consumer participation in separate discharge policy of packaging materials, it is necessary to increase the willingness to participate by reducing potential consumer problems such as removal of packaging labels. This study conducted a survey of 300 consumers aged 14 and over who recycle and discharge directly from their homes. Ninety-nine percent of consumers said PET bottles are released separately. However, only 65% of consumers removed labels (attachment labels, shrink labels) and other materials (caps, vinyl coatings, tapes, handles, bases, etc.) during separate discharge process. Nearly 52% of consumers cited 'difficulty of separation' as the main reason for not removing labels and other materials. One-way ANOVA analysis showed that 'strong adhesion', 'removal initiation problem' and 'material strength' had high mean regardless of age, which are major factors impedes label removal. Using shrink labels with perforated lines rather than adhesive labels would be more beneficial to encouraging participation in separate discharge. However, if the shrink labels do not have perforated lines or are difficult to remove, adhesive labels are often easier to remove than shrink labels because of the strong cohesiveness of shrink labels. As a result, how easy it is for consumers to remove the label is more important than technological differences. In order to increase consumer participation in packaging material and label separations, improvements in structural design are needed along with the selection of materials that are easy to separate. This study is meaningful in examining consumer perceptions, deriving problems and suggesting directions for policy improvement.

• Journal of the Microelectronics and Packaging Society
• /
• v.22 no.3
• /
• pp.45-50
• /
• 2015

The goal of this research is the create novel magnets with no rare-earth contents, with larger energy product by comparison with currently used ferrites. For this purpose we developed nano-sized hard-type/soft-type composite ferrite in which high remanent magnetization (Mr) and high coercivity (Hc). Nano-sized Ba-ferrite, Ni-Zn ferrite and $BaFe_{12}O_{19}/Ni_{0.5}Zn_{0.5}Fe_2O_4$ composite ferrites were prepared by sol-gel combustion method by use of glicine-nitrate and citric acid. Nanocomposite ferrites were calcined at temperature range $700-900^{\circ}C$ for 1h. According to the X-ray diffraction patterns and FT-IR spectra, single phase of NiZn-ferrite and Ba-ferrite were detected and hard/soft nanocomposite ferrite was indicated to the coexistence of the magnetoplumbite-structural $BaFe_{12}O_{19}$ and spinel-structural $Ni_{0.5}Zn_{0.5}Fe_2O_4$ that agreed with the standard JCPDS 10-0325 data. The particle size of nanocomposite turn out to be less than 120 nm. The nanocomposite ferrite shows a single-phase magnetization behavior, implying that the hard magnetic phase and soft magnetic phase were well exchange-coupled. The specific saturation magnetization ($M_s$) of the nanocomposite ferrite is located between hard ($BaFe_{12}O_{19}$) and soft ferrite($Ni_{0.5}Zn_{0.5}Fe_2O_4$). The remanence (Mr) of nanocomposite ferrite is much higher than that of the individual $BaFe_{12}O_{19}$ and $Ni_{0.5}Zn_{0.5}Fe_2O_4$ ferrite, and $(BH)_{max}$ is increased slightly.

• Journal of the Microelectronics and Packaging Society
• /
• v.26 no.2
• /
• pp.15-21
• /
• 2019

We investigated the structural, electrical and optical properties of zinc oxide (ZnO) ultra-thin films grown at $150^{\circ}C$ by atomic layer deposition (ALD). Diethylzinc and deionized water were used as metal precursors and reactants, respectively, for the deposition of ZnO thin films. The growth rate per ALD cycle was a constant 0.21 nm/cycle at $150^{\circ}C$, and samples below 50 cycles had amorphous properties due to the relatively thin thickness at the initial ALD growth stage. With the increase of the thickness from 100 cycles to 200 cycles, the crystallinity of ZnO thin films was increased and hexagonal wurtzite structure was observed. In addition, the particle size of the ZnO thin film increased with increasing number of ALD cycles. Electrical properties analysis showed that the resistivity value decreased with the increase of the thin film thickness, which is correlated with the decrease of the grain boundary concentration in the thicker ZnO thin film due to the increase of grain size and the improvement of the crystallinity. Optical characterization results showed that the band edge absorption in the near ultraviolet region (300 nm~400 nm) was increased and shifted. This phenomenon is due to the increase of the carrier concentration with the increase of the ZnO thin film thickness. This result agrees well with the decrease of the resistivity with the increase of the thin film thickness. Consequently, as the thickness of the thin film increases, the stress on the film surface is relaxed, the band gap decreases, and the crystallinity and conductivity are improved.