• 설비공학논문집
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• 제22권2호
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• pp.64-69
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• 2010

We investigated the variation in contact angle of a nano-sized water droplet on a nano stripe-patterned surface using molecular dynamics simulation. By changing the height and width of the stripe pillar, and the gap width of the stripes, we observed the contact angle of water droplet in equilibrium. When the surface energies were 0.1 and 0.3 kcal/mol, the calculated contact angles were in good agreement with the Cassie and Baxter equation. However, when the surface energy is 0.5 kcal/mol, the contact angles are observed to be perturbed along the Cassie and Baxter equation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.199-205
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• 2006

Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.

• 한국결정성장학회지
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• 제9권2호
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• pp.168-172
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• 1999

HVPE 법으로 sapphire 기판 위에 두께 9$\mu\textrm{m}$의 GaN film을 성장하였다. Sapphire위에 직접 성장된 GaN film은 crack free로 mirror surface를 나타내었고 dislocation density는 $2{\times}10^9/cm^2$이었다.$SiO_2$ mask pattern을 사용하여 성장된 ELO GaN film도 대부분이 mirror surface를 나타내었으나 표면 일부에서 coalescence가 덜 이루어져 stripe 방향으로 hole이 존재하였다. ELO GaN film의 mask 윗부분은 window 부분에 비해 낮은 dislocation density를 나타냈다. 특히 mask center와 window사이 영역에서는 거의 dislocation이 없었다. ELO GaN film의 dislocation density는 평균 $8{\times}10^7/cm^2$.이었다.

• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.6-10
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• 2019

In the presence of $\mu-tip$ for narrow stripe coating, there appears lateral capillary flow along the hydrophilic head lip because the $\mu-tip$ has some resistance to flow. It was known to be suppressed by increasing the contact angle of the head lip. In this paper, we have demonstrated by computational fluid dynamics(CFD) simulations that it can also be suppressed by the formation of micro-patterns on the shim and meniscus guide embedded into the slot-die head. To optimize the micro-patterned structure, we have performed simulations by varying the groove width, depth, and clearance. In the absence of micro-patterns, it is shown by experiment and simulation that the solution spreads to a distance of $1,300{\mu}m$ from the ${\mu}-tip$. In the presence of micro-patterns with the groove width and clearance of $50{\mu}m$, the distance the solution spreads is reduced to $260{\mu}m$. However, no further suppression in the capillary flow is observed with micro-patterns with the groove width of $40{\mu}m$ or less. It is also observed that the capillary flow is not affected by the groove depth if it is larger than $10{\mu}m$. We have shown that the distance the solution spreads can be reduced further to $204{\mu}m$ by coating a hydrophobic material (contact angle of $104^{\circ}$) on the surface of micro-patterns having the groove width and clearance of $50{\mu}m$.