• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.2
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• pp.64-69
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• 2010

We investigated the variation in contact angle of a nano-sized water droplet on a nano stripe-patterned surface using molecular dynamics simulation. By changing the height and width of the stripe pillar, and the gap width of the stripes, we observed the contact angle of water droplet in equilibrium. When the surface energies were 0.1 and 0.3 kcal/mol, the calculated contact angles were in good agreement with the Cassie and Baxter equation. However, when the surface energy is 0.5 kcal/mol, the contact angles are observed to be perturbed along the Cassie and Baxter equation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.199-205
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• 2006

Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.168-172
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• 1999

The 9 $\mu\textrm{m}$ GaN films on sapphire substrate were grown by Hydride vapor phase epitaxy. Dislocation density of these GaN films was measured by TEM. GaN film with crack free and mirror surface was directly grown on sapphire substrate. The dislocation density of this GaN film was $2{\times}10^9/cm^2$. The surface of GaN film on patterned GaN layer also presented a smooth mirror. But a part of GaN surface included holes because of incomplete coalescence. The dislocation density of GaN film above the mask region was lower than that in the window region. Especially, the dislocation density in the region between mask center and window region was close to dislocation free. The average dislocation density of ELO GaN was $8{\times}10^7/cm^2$.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.6-10
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• 2019

In the presence of $\mu-tip$ for narrow stripe coating, there appears lateral capillary flow along the hydrophilic head lip because the $\mu-tip$ has some resistance to flow. It was known to be suppressed by increasing the contact angle of the head lip. In this paper, we have demonstrated by computational fluid dynamics(CFD) simulations that it can also be suppressed by the formation of micro-patterns on the shim and meniscus guide embedded into the slot-die head. To optimize the micro-patterned structure, we have performed simulations by varying the groove width, depth, and clearance. In the absence of micro-patterns, it is shown by experiment and simulation that the solution spreads to a distance of $1,300{\mu}m$ from the ${\mu}-tip$. In the presence of micro-patterns with the groove width and clearance of $50{\mu}m$, the distance the solution spreads is reduced to $260{\mu}m$. However, no further suppression in the capillary flow is observed with micro-patterns with the groove width of $40{\mu}m$ or less. It is also observed that the capillary flow is not affected by the groove depth if it is larger than $10{\mu}m$. We have shown that the distance the solution spreads can be reduced further to $204{\mu}m$ by coating a hydrophobic material (contact angle of $104^{\circ}$) on the surface of micro-patterns having the groove width and clearance of $50{\mu}m$.