• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.49.1-49.1
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• 2018

신축성 디바이스는 다양한 디자인을 적용할 수 있고 형태에 대한 제약을 최소화 할 수 있어 수요가 점점 증가하고 있다. 신축성 디바이스의 핵심인 신축 전극에 대한 연구가 활발히 진행되고 있으며, 물결무늬나 코일 형태의 금속 전극, 탄소 소재를 사용한 전극, 하이드로젤 전극 등이 연구되었다. 하지만 이러한 방법들은 공정과정이 복잡하거나, 변형시 전기적 저항 변화가 크다. 또한 단일 소재를 활용한 신축성 전극은 물질적인 한계로 인하여 신축성을 향상시키는 데 한계가 있다. 신축 전극에 많이 사용되는 은 나노와이어는 용액에 분산되어 있어 공정이 쉽고, 좋은 전기적 특성을 가지는 소재이다. 은 나노와이어는 네트워크 형태로 얽혀있어 신축성 있는 배선의 재료로써 좋은 역할을 할 것으로 기대하지만, 은 나노 와이어만 사용하여 제작한 배선은 늘렸을 때 나노와이어들 간의 접촉 불량으로 저항이 증가한다. 이를 보완하기 위해 본 연구에서는 배선을 형성하고 있는 금속 나노소재 간 전기적 접촉을 향상시키기 위해 은 나노와이어와 은 나노입자를 섞어 하이브리드 잉크를 제작하여 전극을 형성했다. 하이브리드 잉크로 제작한 전극을 신축성 있는 고분자에 함입하여 신축률에 따른 저항을 평가했다. $175^{\circ}C$에서 열처리한 전극을 5% 늘렸을 때, 단일 소재인 은 나노와이어나 은 나노입자만을 사용한 경우는 전극이 끊어지거나 저항이 175%나 증가했지만, 하이브리드 잉크를 사용했을 때는 16.5% 증가했다.

• Transactions of the Korean hydrogen and new energy society
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• v.29 no.6
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• pp.627-634
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• 2018

Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.108-109
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• 2012

This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.

• Carbon letters
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• v.25
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• pp.1-13
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• 2018

Gold functionalized graphene oxide (GOAu) nanoparticles were reinforced in acrylonitrile-butadiene rubbers (NBR) via solution and melt mixing methods. The synthesized NBR-GOAu nanocomposites have shown significant improvements in their rate of curing, mechanical strength, thermal stability and electrical properties. The homogeneous dispersion of GOAu nanoparticles in NBR has been considered responsible for the enhanced thermal conductivity, thermal stability, and mechanical properties of NBR nanocomposites. In addition, the NBR-GOAu nanocomposites were able to show a decreasing trend in their dielectric constant (${\varepsilon}^{\prime}$) and electrical resistance on straining within a range of 10-70%. The decreasing trend in ${\varepsilon}^{\prime}$ is attributed to the decrease in electrode and interfacial polarization on straining the nanocomposites. The decreasing trend in electrical resistance in the nanocomposites is likely due to the attachment of Au nanoparticles to the surface of GO sheets which act as electrical interconnects. The Au nanoparticles have been proposed to function as ball rollers in-between GO nanosheets to improve their sliding on each other and to improve contacts with neighboring GO nanosheets, especially on straining the nanocomposites. The NBR-GOAu nanocomposites have exhibited piezoelectric gauge factor (${GF_{\varepsilon}}^{\prime}$) of ~0.5, and piezo-resistive gauge factor ($GF_R$) of ~0.9 which clearly indicated that GOAu reinforced NBR nanocomposites are potentially useful in fabrication of structural, high temperature responsive, and stretchable strain-sensitive sensors.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.1
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• pp.17-22
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• 2011

ZnO-based thin-film transistors (TFTs) have been fabricated and the mechanical characteristics of electric circuits, such as stress, strain, and deformation are analyzed by the finite element method (FEM). In this study, a mechanical-stability design guide for such systems is proposed; this design takes into account the stress and deformation of the bridge to estimate the stress distribution in an $SiO_2$ film with 0 to 5% stretched on 0.5-${\mu}m$-thick. The predicted buckle amplitude of $SiO_2$ bridges agrees well with experimental results within 0.5% error. The stress and strain at the contact point between bridges and a pad were measured in a previous structural analysis. These structural analysis suggest that the numerical measurement of deformation, SU-8 coating thickness for Neutral Mechanical Plane (NMP) and ITO electrode size on a dielectric layer was useful in enhancing the structural and electrical stabilities.