• Title/Summary/Keyword: Stretchable Substrate

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Rosette Strain Sensors Based on Stretchable Metal Nanowire Piezoresistive Electrodes (신축성 금속 나노선 압저항 전극 기반 로젯 스트레인 센서)

  • Kim, Kang-Hyun;Cha, Jae-Gyeong;Kim, Jong-Man
    • Korean Journal of Metals and Materials
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    • v.56 no.11
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    • pp.835-843
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    • 2018
  • In this work, we report a delta rosette strain sensor based on highly stretchable silver nanowire (AgNW) percolation piezoresistors. The proposed rosette strain sensors were easily prepared by a facile two-step fabrication route. First, three identical AgNW piezoresistive electrodes were patterned in a simple and precise manner on a donor film using a solution-processed drop-coating of the AgNWs in conjunction with a tape-type shadow mask. The patterned AgNW electrodes were then entirely transferred to an elastomeric substrate while embedding them in the polymer matrix. The fabricated stretchable AgNW piezoresistors could be operated at up to 20% strain without electrical or mechanical failure, showing a maximum gauge factor as high as 5.3, low hysteresis, and high linearity ($r^2{\approx}0.996$). Moreover, the sensor responses were also found to be highly stable and reversible even under repeated strain loading/unloading for up to 1000 cycles at a maximum tensile strain of 20%, mainly due to the mechanical stability of the AgNW/elastomer composites. In addition, both the magnitude and direction of the principal strain could be precisely characterized by configuring three identical AgNW piezoresistors in a delta rosette form, representing the potential for employing the devices as a multidimensional strain sensor in various practical applications.

Electrical Characteristics of Organic Ferroelectric Memory Devices Fabricated on Elastomeric Substrate (엘라스토머 기판 상에 제작한 유기 강유전체 메모리 소자의 전기적 특성)

  • Jung, Soon-Won;Ryu, Bong-Jo;Koo, Kyung-Wan
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.6
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    • pp.799-803
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    • 2018
  • We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed $15cm^2V^{-1}s^{-1}$ and $10^6$, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices.

Variation of Elastic Stiffness of Polydimethylsiloxane (PDMS) Stretchable Substrates for Wearable Packaging Applications (웨어러블 패키징용 Polydimethylsiloxane (PDMS) 신축성 기판의 강성도 변화거동)

  • Choi, Jung-Yeol;Park, Dae-Woong;Oh, Tae Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.4
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    • pp.125-131
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    • 2014
  • In order to develop stretchable substrates for wearable packaging applications, the variation behavior of elastic modulus was evaluated for transparent PDMS Sylgard 184 and black PDMS Sylgard 170 as a function of the base/curing agent mixing ratio. Both for Sylgard 184 and Sylgard 170, the true elastic modulus evaluated on a true stress-true strain curve was higher more than two times compared to the engineering elastic modulus obtained from an engineering stres-sengineering strain curve, and their difference became larger with increasing the stiffness of the PDMS. Sylgard 184 exhibited a maximum engineering elastic modulus of 1.74 MPa and a maximum true elastic modulus of 3.57 MPa at the base/curing agent mixing ratio of 10. A maximum engineering elastic modulus of 1.51 MPa and a maximum true elastic modulus of 3.64 MPa were obtained for Sylgard 170 at the base/curing agent mixing ratio of 2.

High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics

  • Jo, Jeong-Ho
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.69.3-69.3
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    • 2012
  • A high-performance low-voltage graphene field-effect transistor (FED array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 and 91 $cm^2/Vs$, respectively, at a drain bias of - I V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.

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Fabrication and Transfer of Laser Induced Graphene (LIG) Electrode for Flexible Substrate-based Electrochemical Sensor Applicatins (유연 기판 기반 전기화학 센서 응용을 위한 레이저 유도 그래핀 전극 제작 및 전사 연구)

  • Kim, Jeong Dae;Kim, Taeheon;Pak, Jungho
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.3
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    • pp.406-412
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    • 2018
  • This paper describes the fabrication process of laser induced graphene (LIG) and its transfer method on to a flexible and stretchable PDMS substrate. By irradiating CO2 laser on a polyimide(PI) film surface, a localized high temperature is created, resulting in a three-dimensional porous graphene network structure with good conductivity. This LIG electrode is relatively easy to fabricate and since it is very weak the LIG electrode was transferred to a flexible PDMS substrate to increase the sturdiness as well as possible use in flexible applications. Sheet resistance, thickness, and electrochemical activity of the fabricated in-situ LIG electrodes have been examined and compared with the LIG electrodes after transferring to PDMS elastomer. The properties of the LIG electrodes were also examined depending on the $CO_2$ laser power. As the irradiated laser power increased, the LIG electrode resistance decreases and the LIG electrode thickness increased. At 4.8 W of laser power, the average sheet resistance and thickness of the fabricated LIG electrodes were approximately $31.7{\Omega}/{\Box}$ and $62.67{\mu}m$, respectively. Moreover, the electrochemical activity of the fabricated LIG electrode at 4.8 W of laser power showed a high oxidation current of $28.2{\mu}A$ after transferring to PDMS.

Nano-Structures on Polymers Evolved by Ion Beam/Plasma

  • Moon, Myoung-Woon;Lee, Kwang-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.76-76
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    • 2012
  • Surface engineering of polymers has a broad array of scientific and technological applications that range from tissue engineering, regenerative medicine, microfluidics and novel lab on chip devices to building mechanical memories, stretchable electronics, and devising tunable surface adhesion for robotics. Recent advancements in the field of nanotechnology have provided robust techniques for controlled surface modification of polymers and creation of structural features on the polymeric surface at submicron scale. We have recently demonstrated techniques for controlled surfaces of soft and relatively hard polymers using ion beam irradiation and plasma treatment, which allows the fabrication of nanoscale surface features such as wrinkles, ripples, holes, and hairs with respect to its polymers. In this talk, we discuss the underlying mechanisms of formation of these structural features. This includes the change in the chemical composition of the surface layer of the polymers due to ion beam irradiation or plasma treatment and the instability and mechanics of the skin-substrate system. Using ion beam or plasma irradiation on polymers, we introduce a simple method for fabrication of one-dimensional, two-dimensional and nested hierarchical structural patterns on polymeric surfaces on various polymers such as polypropylene (PP), polyethylene (PE), poly (methyl methacrylate) PMMA, and polydimethylsiloxane (PDMS).

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High Resolution Patternning for Graphene Nanoribbons (GNRs) Using Electro-hydrodynamic Lithography

  • Lee, Su-Ok;Kim, Ha-Nah;Lee, Jae-Jong;Kang, Dae-Joon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.198-198
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    • 2012
  • Graphene has been the subject of intense study in recent years owing to its good optoelectronic properties, possibility for stretchable electronics, and so on. Especially, many research groups have studied about graphene nanostructures with various sizes and shapes. Graphene needs to be fabricated into useful devices with controllable electrical properties for its successful device applications. However, this been far from satisfaction owing to a lack of reliable pattern transfer techniques. Photolithography, nanowire etching, and electron beam lithography methods are commonly used for construction of graphene patterns, but those techniques have limitations for getting controllable GNRs. We have developed a novel nanoscale pattern transfer technique based on an electro-hydrodynamic lithography providing highly scalable versatile pattern transfer technique viable for industrial applications. This technique was exploited to fabricate nanoscale patterned graphene structures in a predetermined shape on a substrate. FE-SEM, AFM, and Raman microscopy were used to characterize the patterned graphene structures. This technique may present a very reliable high resolution pattern transfer technique suitable for graphene device applications and can be extended to other inorganic materials.

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Structural Analysis and Characterization of PZT Fiber Fabricated by Electrospinning (Electrospinning법으로 제조된 PZT 섬유의 구조분석 및 특성평가)

  • Park, Chun Kil;Yun, Ji Sun;Jeong, Young Hun;Nam, Joong-Hee;Cho, Jeong Ho;Paik, Jong-Hoo;Jeong, Dae Young
    • Journal of the Korean Ceramic Society
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    • v.50 no.6
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    • pp.466-469
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    • 2013
  • Currently, piezoelectric ceramics are being applied in various fields, such as ultrasonic sensors, vibration devices, sound filters, and various energy conversion devices. Flexible piezoelectric ceramics are widely studied in an effort to mitigate the disadvantages of their brittle and inductile properties. Structural damage to piezoelectric fibers is much less than that to thin films when piezoelectric fibers are twisted or bent. Therefore, stretchable devices can be fabricated if piezoelectric fibers are obtained using an elongated substrate. In this study, sintering processes of PZT ($Pb(Zr_{0.53}Ti_{0.47})O_3$) fibers prepared by electrospinning were optimized through the TGA and XRD analyses. The crystal structure and microstructure of the piezoelectric fibers were investigated by XRD, FE-SEM and TEM.

Fabrication of flexible sponge electrodes using Ag nanowires (은나노와이어 함침 유연 스펀지 전극 제조)

  • Park, Kyoung Ryeol;Yoo, Sehoon;Ryu, Jeong Ho;Mhin, Sungwook
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.5
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    • pp.189-193
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    • 2020
  • Recently, various methods for preparing a flexible electrode for implementing a wearable sensor have been introduced. Wearable sensors show similar tendency to use various polymer substrates, which provides elasticity suitable to the motion of human body. In this paper, a highly elastic silver nanowire based electrode was prepared on a sponge-based stretchable substrate, and electrical properties were evaluated. Silver nanowires were grown using a wet chemical synthesis, impregnated into a plasma-treated sponge, and then heat treated at a low temperature. In particular, the plasma surface treatment of the sponge enables uniform coating of silver nanowires. The flexible sponge electrode showed reliable electrical resistance changes over 160 repeated tensile-compression cycles.

Effect of CNT-Ag Composite Pad on the Contact Resistance of Flip-Chip Joints Processed with Cu/Au Bumps (CNT-Ag 복합패드가 Cu/Au 범프의 플립칩 접속저항에 미치는 영향)

  • Choi, Jung-Yeol;Oh, Tae Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.3
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    • pp.39-44
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    • 2015
  • We investigated the effect of CNT-Ag composite pad on the contact resistance of flip-chip joints, which were formed by flip-chip bonding of Cu/Au chip bumps to Cu substrate metallization using anisotropic conductive adhesive. Lower contact resistances were obtained for the flip-chip joints which contained the CNT-Ag composite pad than the joints without the CNT-Ag composite pad. While the flip-chip joints with the CNT-Ag composite pad exhibited average contact resistances of $164m{\Omega}$, $141m{\Omega}$, and $132m{\Omega}$ at bonding pressures of 25 MPa, 50 MPa, and 100 MPa, the flip-chip joints without the CNT-Ag composite pad had an average contact resistance of $200m{\Omega}$, $150m{\Omega}$, and $140m{\Omega}$ at each bonding pressure.