• Journal of the Korean institute of surface engineering
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• v.44 no.5
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• pp.185-189
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• 2011

$Cu_2ZnSnSe_4$ thin films for solar absorber application were prepared by pulsed laser deposition of a synthesized $Cu_2ZnSnSe_4$ compound target. The film's composition revealed that the deposited films possess an identical composition with the target material. Further film compositional control toward a stoichiometric composition was performed by optimizing substrate temperature, deposition time and target rotational speed. At the optimum condition, X-ray diffraction patterns of films showed that the films demonstrated polycrystalline stannite single phase with a high degree of (112) preferred orientation. The absorption coefficient of $Cu_2ZnSnSe_4$ thin films were above 104 cm.1 with a band gap of 1.45 eV. At an optimum condition, films were identified as a p type semiconductor characteristic with a resistivity as low as $10^{-1}{\Omega}cm$ and a carrier concentration in the order of $10^{17}cm^{-3}$.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2007-2010
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• 2008

Vanadium pentoxide ($V_2O_5$) powder was prepared and mixed with Molybdenum Oxides ($MoM_3$) to form Mo-doped and -undoped $VO_2$ films by a sol-gel method on graphite conductive substrates. X-Ray diffraction (XRD) and scanning electron microscopy (SEM) was used to investigate the chemical compositions and microstructures of the Mo-doped and -undoped $VO_2$ films. The variation of electrical resistance was measured as a function of temperature and stoichiometric composition between vanadium and molybdenum. In this study, it was found that Mo-doped and -undoped $VO_2$ shows the typical negative temperature coefficient (NTC) behavior. As the amount of the molybdenum increases, the electrical resistance of Modoped $VO_2$ film gets reduced under the transition temperature and a linear decrease in the transition temperature is observed. From these experimental results, we can conclude that the electrical resistance behavior with temperature change of $VO_2$ films can be utilized as a self-heating source with the electrical current flowing through the graphite substrate.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.665-666
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• 2006

Undoped $CoSb_3$ powders were synthesized by mechanical alloying (MA) of elemental powders using a nominal stoichiometric composition. Nano-structured, single-phase skutterudite $CoSb_3$ was successfully produced by vacuum hot pressing (VHP) using MA powders without subsequent annealing. Phase transformations during synthesis were investigated using XRD, and microstructure was observed using SEM and TEM. Thermoelectric properties in terms of Seebeck coefficient, electrical conductivity, thermal conductivity and figure of merit(ZT) were systematically measured and compared with the results of analogous studies. Lattice thermal conductivity was reduced owing to increasing phone scattering in nano-structured MA $CoSb_3$, leading to enhancement in the thermoelectric figure of merit. MA associated with VHP technique offers an alternative potential processing route for the process of skutterudite.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.541-551
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• 1988

The purpose of this investigation was to prepare multicomponent monolithic Li-Al-Si gels of composition(mol%) 16.67 Li2O-16.67 Al2O3-66.67 SiO2 and to convert the gels to monolithic glass-ceramic at low temperature without melting. The hydrolysis, DTA, TGA, TMA, SEM, pore distribution, density and the activation energy for crystallization of the glass-ceramic formation with rawmaterials of which tetraethl orhosilicate of networkforming cation(Si) is partially hydrolyzed, aluminum isoproxide and lithium methoxide prepared by Li-metal react with methanol were studied. The results were as follows : 1) Monolithic gels which were added with additional water, resulting in a total water content 2.5 to 3.0 times the stoichiometric amount required to fully hydrolyze the alkoxides. 2) Specimens were dried to form crylinders 60mm in length and 40mm in diameter in about 800 hrs at 5$0^{\circ}C$. 3) $\beta$-eucryptite crystals and $\beta$-spodumene crystals were detected in samples heated above 75$0^{\circ}C$. 4) Within the temperature and range of 25-50$0^{\circ}C$ and 1,00$0^{\circ}C$ the thermal expansion coefficient for crystallized samples were shown as 2.6-5.7$\times$10-7/$^{\circ}C$ and 7.4-12.5$\times$10-7/$^{\circ}C$, respectively. 5) The activation energy for the crystal growth was 11.01kcal/mol at 794$^{\circ}C$ to 85$0^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.398-398
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• 2013

The electronic properties and the local structure of tantalum oxide thin film with variation of oxygen flow rate ranging from 9.5 to 16 sccm (standard cubic centimeters per minute) have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results show that the Ta4f spectrum for all films consist of the strong spin-orbit doublet $Ta4f_{7/2}$ and $Ta4f_{5/2}$ with splitting of 1.9 eV. The oxygen flow rate of the film results in the appearance of new features in the Ta4f at binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV, these peaks attribute to $Ta^{1+}$, $Ta^{2+}$, $Ta^{4+}$/$Ta^{2+}$, and $Ta^{5+}$, respectively. Thus, the presence of non-stoichiometric state from tantalum oxide ($TaO_x$) thin films could be generated by the oxygen vacancies. The REELS spectra suggest the decrease of band gap for tantalum oxide thin films with increasing the oxygen flow rate. The absorption coefficient ${\mu}$ and its fine structure were extracted from the fluorescence mode of extended X-ray absorption fine structure (EXAFS) spectra. In addition, bond distances (r), coordination numbers (N) and Debye-Waller factors (${\sigma}^2$) each film were determined by a detailed of EXAFS data analysis. EXAFS spectrapresent both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the increase of oxygen flow rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.231-231
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• 2010

Thermoelectric properties of a multi-layered thin film, which was composed with indium selenide and bismuth telluride, were investigated. The structure of the layered thin film is Bi-Te /In-Se/Bi-Te and it was prepared on sapphire substrate by RF magnetron sputter using stoichiometric $Bi_2Te_3$ (99.9%) and $In_2Se_3$(99.99%) target at room temperature. Then, it was annealed at temperature range of 150 - $500^{\circ}C$ in Ar ambient. Structural characterizations were done using X-ray diffraction(XRD, BRUKER, D8, 60kW) and transmission electron microscopy (TEM, FEI, Tecnai, F30 S-Twin), respectively. Cross-section of multi-layer structure was observed by Scanning electron microscopy (SEM). The resistivity and Seebeck coefficient of these samples were also measured by conventional equipment at room temperature. The maximum value of power factor was $1.16\;{\mu}W/k^2m$ at annealing temperature of $400^{\circ}C$.

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.68-74
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• 2015

The porous $Mg_3Sb_2$ based compounds with 60~70% of relative density were prepared by powder compaction at room temperature and reactive liquid phase sintering at 1023 K for 4hrs. The stoichiometric $Mg_3Sb_2$ compounds were synthesized from elemental Sb and Mg powder in the mixing range of 61~63 at% Mg. The increased scattering effect due to the micro-pores reduced the mobility of the charge carrier and the phonon, which caused the electrical conductivity and the thermal conductivity to decrease, respectively. But the scattering effect was greater for the electrical conductivity than for the thermal conductivity. Excess Mg alloyed in the $Mg_3Sb_2$ compounds decreased the electrical conductivity, but had no effect on the thermal conductivity. On the other hand, the large increase of the Seebeck coefficient was the result of a decrease in the charge carrier density due to the excess Mg. Dimensionless figure of merit of the porous $Mg_3Sb_2$ compound reached a maximum value of 0.28 at 61 at% Mg. The obtained value was similar to that of $Mg_3Sb_2$ compounds having little pores.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• Applied Chemistry for Engineering
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• v.5 no.4
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• pp.580-587
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• 1994

The oxidative coupling of methane was studied kinetically using $Na^+(50wt%)/MgO$ catalyst at 710, 730, 750, 770 and $790^{\circ}C$ in a fixed bed flow reactor at the atmospheric pressure under differential conversion conditions. Through curve fitting, it was found that the Langmuir-Hinshelwood type mechanism was fitted to this reaction rather than Rideal-Redox type or Eley-Rideal type mechanism. Therefore, it was proposed that the $O_2{^-}$ or $O_2{^{2-}}$ species on the surface was related to the production of $CH_3{\cdot}$. The estimated activation energy of $CH_3{\cdot}$ production was about 39.3kcal/mol. Moreover, as the result of curve fitting, the stoichiometric coefficient of $O_2$ for the production of $CH_3{\cdot}$ to produce $CO_x$was approximately 1.5. Accordingly, it could be concluded that the $CH_3O_2{\cdot}*$ was prouduced through the partial oxidation of $CH_3{\cdot}$ with the surface oxygen.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.1
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• pp.11-19
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• 2000

In order to predict the performance of biological wastewater treatment plant, the kinetic parameters and stoichiometric coefficient must be known. The theories and experimental procedures for determining the biological kinetic parameters were discussed in this study. Respirometric analysis in the batch reactor was carried out for the experimental assessment of kinetic parameters. A simple procedure to estimate kinetic parameters of heterotrophs and autotrophs under aerobic condition was presented. The difficulties in the interpretation of COD and VSS measurements encouraged the conversion of respirometric data to growth data. Maximum specific growth rate, yield coefficient, half saturation constant and decay rate of heterotrophic biomass were obtained from OUR(Oxygen Uptake Rate) data. Maximum specific growth rate of autotrophic biomass was obtained from the increase of nitrate concentration. The aim of this paper is to estimate the kinetic parameters of heterotrophic and autotrophic biomass by means of the respirometric analysis of activated sludge behavior in the batch reactors. These procedures may be used for the activated sludge modeling with complex kinetic parameters.