• Journal of Marine Bioscience and Biotechnology
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• v.14 no.1
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• pp.1-8
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• 2022

This study examined the growth, fatty acid (FA) content, and carotenoids of a newly isolated freshwater microalga, Mychonastes sp. 246, in various culture media. The appropriate temperature and light intensity for culturing Mychonastes sp. 246 were determined as 18℃-22℃ and 200-250 µmol/m²/s using a high throughput photobioreactor. The microalgal cells were cultivated in 0.5 L bubble column photobioreactors using BG11, Bold's Basal media, and f/2 media. According to the growth results of the microalgae, BG11, among the tested media, showed the highest biomass concentrations (3.5 ± 0.1 g/L in 10 d). To enhance the biomass growth of the microalgae, the N:P ratio in BG11 was manipulated from 45:1 to 7:1 based on the stoichiometric cell composition. The biomass concentrations of Mychonastes sp. 246 grown on the manipulated BG11 (MBG) increased to 38% (4.6 ± 0.3 g/L in d) compared with the original BG11 (3.3 g/L). The FA content of the microalgae grown on the MBG was lower (8.4%) than that of the original BG11 (10.1%) while the FA compositions did not exhibit any significant differences. Furthermore, three kinds of carotenoids were identified in Mychonastes sp. 246, zeaxanthin, lutein, and β-carotene. These results suggest an effective strategy for increasing biomass concentrations, FA content, and carotenoids of microalgae by performing a simple N:P adjustment in the culture media.

• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.128-133
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• 1995

Yttrium Iron Garnet($Y_{3}Fe_{5)O_{12}$) films have been succsssfully grown on(111)GGG wafer by KrF excimer laser ablation of stoichiometric garnet target at the oxygen partial pressure, $P(O_{2}$, ranging 20 to 500 mTorr. During the deposition of the films the substrate temperature was maintained at $700^{\circ}C$ and the laser beam energy density at $7.75\;J/cm_{2}$. Microstructure, composition and magnetic properties of the films obtained were investigated as a function of oxygen pressure and thickness of the films. Epitaxial films with a dense and a smooth surface were reproducible at a low oxygen pressure. The films of $2.75\;{\mu}$ min thickness deposited at 20 mTorr of $P(O_{2})$ showed $4{\pi}M_{s}$ of 1500 Gauss and $H_{c}$ of 3 Oe after annealing at $800\;^{\circ}C$ for 20 minutes. As-deposited films of $0.8\;\mu\textrm{m}$ in thickness exhibited the $4{\pi}M_{s}$ of 1730 Gauss and $H_{c}$ of 7 Oe. The magnetic properties of the films obtained were almost identical to those of a single crystal YIG.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.283-290
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• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of the Mineralogical Society of Korea
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• v.6 no.2
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• pp.57-79
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• 1993

Chuncheon nephrite, which was formed by the polymetasomatic alteration of dolomitic marble, can be classified into pale green, green, dark green, and grey types on the basis of their occurrence, mineralogical and textural characteristics. The nephrites consist obiefly of fibrous or hairlike(length/width ratio>10) cryptocrystalline(crystal width < $2{\mu}m$) tremolite, and include less amounts of micro-crystalline diopside, calcite, clinochlore, and sphene as impurities. The oriented and rather curved crystal aggregate, of nephritic tremolite are densely interwoven, resulting in a massive-fibrous texture which may explain the characteristic toughness of nephritic jade. The characteristic greenish color of the nephrite may be preferably related to Fe rather than Cr and Ni. However, the variation of color and tint in the Chuncheon nephrite also depends on the mineralogical and textural differences such as crystallinity, texture, and impurities. The chemical composition of the nephritic tremolite is not stoichiometric and rather dispersed especially in the abundances of Al, Mg, and Ca. Al content and Mg/Ca ratio for the nephritic tremolite are slightly increased with deepening in greenish color of the nephrite. Fe content in the nephritic tremolite is generally very low, but comparatively richer in the dark green nephrite. In nephritic tremolite, wide-chain pyriboles are irregularly intervened between normal double chains, forming a chain-width disorder. Most nephritic tremolites in the Chuncheon nephrite show various type of chain-width defects such as triple chain(jimthompsonite), quintuple chain (chesterite), or sometimes quadruple chain in HRTEM observations. The degree of chain-width disorder in the nephritic tremolite tends to increase with deepening in greenish color. Triple chain is the most common type, and quadruple chain is rarely observed only in the grey nephrite. The presence of pyribole structure in the nephritic tremolite is closely related to the increase of Al content and Mg/Ca ratio, a rather dispersive chemical composition, a decrease of relative intensity in (001) XRD reflection, and an increase in b axis dimension of unit cell. In addition, the degree and variation of chain-width disorder with nephrite types may support that an increase of metastability was formed by a rapid diffusion of Mg-rich fluid during the nephrite formation.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.99-104
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• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

• Journal of the Korean Electrochemical Society
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• v.8 no.4
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• pp.172-176
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• 2005

Recently, many researches on the high-voltage 5 V class cathode material have focused on $LiNi_{0.5}Mn_{1.5}O_4$, where $Mn^{3+}$ in the existing $LiMn_2O_4 (Li[Mn^{3+}][Mn^{4+}]O_4)$ is replaced by $Ni^{2+}(Li[Ni^{2+}]_{0.5}[Mn^{4+}]_{1.5}O_4)$ in order to utilize $Ni^{2+}/Ni^{4+}$ redox reaction in the 5V region. The partial substitution of Mn in $LiMn_2O_4$ for other transition metal element, $LiM_yMn_{1-y}O_4$(M=Cr, Al, Ni, Fe, Co, Cu, Ga etc) is known as a good solution to overcome the problems associated with $LiMn_2O_4$ like the gradual capacity fading. In this study, we synthesized $LiNi_{0.5}Mn_{1.5}O_4$ through a mechanochemical process and investigated its morphological, crystallographic and electrochemical characteristics. The results showed that 4 V peaks had been found in the cyclic volammograms of the synthesized powders due to the existence of $Mn^{3+}$ from the incomplete substitution of $Ni^{2+}$ for $Mn^{3+}$ implying that the mechanochemical activation alone was not good enough to synthesize an exact stoichiometric compound of $LiNi_{0.5}Mn_{1.5}O_4$. The synthetic condition of mechanochemical process, such as type of starting materials, ball-mill and calcination condition was optimized for the best electrochemical performance.

• Applied Chemistry for Engineering
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• v.5 no.5
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• pp.808-818
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• 1994

Effects of ceria additive on the activity and thermal aging behavior of supported Ru catalysts were investigated using Ru/${\gamma}$-$Al_2O_3$and Ru/$CeO_2$-${\gamma}$-$Al_2O_3$. The catalysts were characterized by $^{129}Xe$-NMR and $H_2$ chemisorption. The cataltic activity for conversion of CO, HC and $NO_x$ was measured using simulated automobile engine exhausts under lean, rich and stoichiometric conditions. For both fresh and aged catalysts, Ru/$CeO_2$-${\gamma}$-$Al_2O_3$ was more active than Ru/${\gamma}$-$Al_2O_3$ for all three pollutants. Results of $^{129}Xe$-NMR and $H_2$ chemisorption indicated that sintering of Ru particles occurred to the same extent for both catalysts during the thermal aging process. After thermal aging at 673K, however, the catalytic activity of the aged Ru/$CeO_2$-${\gamma}$-$Al_2O_3$ was substantially higher than that of the fresh one, while the activity of Ru/${\gamma}$-$Al_2O_3$ decreased after the thermal aging. This finding may suggest new active sites were created during the thermal aging, probably in the vicinity of the interface between Ru and Ce. For more quantitative investigation of the effect of a cation such as Ce on the thermal aging of Ru metal particles, Ru catalysts supported on cation-exchanged Y-zeolites were used as the model catalysts. The results indicated that when Ba, Ca, La, Y or Ce was used for the cation exchange, the exchanged cation did not affect the thermal aging behavior of Ru in Y-zeolite, as evidenced by $^{129}Xe$-NMR and EXAFS.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.