• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.159-164
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• 1997

We have studied initial oxidation of the alkali metal(AM)/Si(111) surface using X-ray photoelectron spectroscopy(XPS) and reflection high energy electron diffraction(RHEED) at room temperature(RT) and high temperature(HT)(300~50$0^{\circ}C$). The oxidation of the Si(111)7$\times$7 surface was promoted by the adsorption of 1 momolayer(ML) AM, whereas no promotion occurred for submonolayer(<0.5 ML) adsorbed Si(111)7$\times$7 surface at RT. O Is core level spectra were measured with increasing oxygen exposure. It was found that the oxygen adsorbed on the Si(111)7$\times$7-AM surface have two different bond configuration, Si-O and Am-O, respectively. From these results, we discussed the role of AM-O bonding in the promoted oxidation. At HT(300~50$0^{\circ}C$), the AM-adsorbed surface became very inactive with the structural transformation to the 3$\times$1-AM. We present the results of the oxidation of the Si(111)3$\times$1-AM(Na, K, Cs) surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric $YMnO_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of $YMnO_3$ thin film is $300{\AA}/min$ at $Ar/Cl_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, YFx compounds were found on the surface of $YMnO_3$ thin film which is etched in $Ar/Cl/CF_{4}$ plasma. The etch profile of $YMnO_3$ film is improved by addition of $CF_4$ gas into the $Ar/Cl_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.106-110
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• 2006

We have investigated the effect of the experimental variables such as temperature and pressure on conformality of Co films deposited over high aspect ratio trenches using $Co_2(CO)_8$ as a precursor. The results show that the conformality of Co films is a strong function of temperature and process pressure. Lowering the pressure and temperature significantly improves the conformality. As the pressure decreases from 0.6 Torr to 0.2 Torr at $50^{\circ}C$, the bottom coverage of Co films over $0.2{\mu}m$ width trenches with an aspect ratio of 13 to 1 significantly increases to 85%. However, further increasing the temperature from 50 to $60^{\circ}C$ at the pressure of 0.2 Torr degrades the bottom coverage to 14%. In contrast, the extremely low pressure of 0.03 Torr allows the excellent conformal deposition of Co films up to $70^{\circ}C$. This can be attributed to the suppression of homogeneous reaction in the gas phase, which can create the intermediate products with high sticking coefficient. In addition, the Co films deposited at $50^{\circ}C$ show the low resistivity with negligible contamination. As a result, the newly developed Co process using MOCVD can be implemented into the next generation devices with complex shapes.

• Applied Chemistry for Engineering
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• v.10 no.2
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• pp.225-230
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• 1999

Low pressure metal organic chemical vapor deposition (LPMOCVD) of $Li_2O$ solid thin films from Li(DPM) in nitrogen-oxygen or argon-oxygen atmosphere was experimentally investigated by using a small hot wall tubular type reactor. XRD and ESCA analysis revealed that $Li_2CO_3$ film grew in nitrogen-oxygen atmosphere and $Li_2O$ grew in argon-oxygen atmosphere. The grown lithium oxide or carbonate reacted with silicon or silica base materials to produce silicates. The CVD model analysis by means of the well-known micro trench method and Monte Carlo simulation was not fully successful, but a set of data on gas phase reaction rate constant and surface reaction constant was obtained.

• Journal of the Korean Society of Food Science and Nutrition
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• v.39 no.7
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• pp.999-1004
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• 2010

This study was carried out to investigate the quality characteristics of ginseng Jung Kwa obtained by treatments with different sugars. Ginseng Jung Kwa was made with four different sugars (sucrose, glucose, honey and fructose). Chemical characteristic was measured by ginsenosides content and rheological characteristics were measured by rheometer and color meter. Total ginsenoside and Rf contents on Ginseng Jung Kwa by sucrose were highest at 10.0, and 7.82 mg/g, respectively. On ginseng Jung Kwa by fructose, total ginsenoside content was the lowest, and hardness and adhesiveness were the highest, and by honey, stiffness, cohesiveness, gumminess, chewiness, and springiness were the highest, and fracture force did not appear as a significant difference by treatment of different sugars. Coefficient of variance on ginseng Jung Kwa by honey was the highest. On ginseng Jung Kwa by sucrose, color (lightness, redness and yellowness) all were the highest. Browning on Jung Kwa by fructose was the greatest. Sensory evaluation preference analysis (color, taste, texture, flavor and overall acceptability) on ginseng Jung Kwa were determined by 50 panelists (30~50's age) using 5-point scale. On ginseng Jung Kwa by honey, texture and overall acceptability were the best. Ginseng Jung Kwa by fructose was very sticking and adhering, so preference by sensory evaluation was inferior to others.

• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.607-617
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• 1998

Au was dosed on $TiO_2(001)$ film grown epitaxially on Mo(100) surface in about 90 ${\AA}$ thickness. The growth mode of Au, thermal behavior and stability of the Au clusters, and the binding energy shift of Au 4f with the change in the amount of Au loading were studied by Auger Electron Spectroscopy (AES), Temperature Programmed Desorption (TPD) spectroscopy, Ion Scattering Spectroscopy (ISS), and X-ray Photoelectron Spectroscopy (XPS). Au grows three dimensionally on $TiO_2(001)$ film and the average size of Au clusters prepared at low temperature is smaller than those at higher temperature and the size increases with temperature irreversibly. Au clusters on $TiO_2(001)/Mo(100)$ start evaporation at 1000 K. TPD spectra of Au show very asymmetric peaks with the same leading edges irrespective of the amount of Au loading. The temperature at the peak maximum increases with the amount of Au. The desorption energy of Au obtained from the leading edge analysis of the TPD spectra is about 50 kcal/mol. The initial sticking coefficient of Au on $TiO_2(001)$ is constant in the temperature range of 200-600 K. The binding energy of Au 4f for the Au loaded on the film less than 2.0 MLE shifts to higher energy compared with the bulk Au. The shift is +0.3 eV at 0.1 MLE Au amount.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.244-250
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• 1999

MOCVD TiN films were prepared from a new TiN precursor, tetrakis(etylmethylamino)titanium (TEMAT) and ammonia. Deposition of TiN films from a single precursor, TEMA T yielded the growth rates of $70 to 1050\AA$/min, depending on the deposition temperature. Furthermore, the excellent bottom coverage of -90% over $0.35\mu\textrm{m}$ contacts was obtained at $275^{\circ}C$. The addition of ammonia to TEMA T lowered the resistivity of as- deposited TiN film to ~ $800\mu\omega-cm$ from $3500~6000\mu\omega-cm$ and improved the stability of TiN film in air. Examination of the films by Auger electron spectroscopy(AES) showed that the oxygen and carbon contents decreased with the addition of ammonia. However, increasing ammonia flow rate decreased the bottom coverage of TiN films over $0.5\mu\textrm{m}$ contacts, probably due to the high sticking coefficient of intermediate species produced from the gas phase reaction of TEMA T and ammonia. Based on the byproduct gases detected by the quadrupole mass spectrometer (QMS), the transammination reaction was proposed to be responsible for TiN deposition. In addition, XPS analysis revealed that the carbon in the films made from TEMA T and ammonia was metallic carbon, suggesting that $\beta$-hydrogen activation process occurs competitively with the transammination reaction.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.42-54
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• 1995

$Ta_2O_5$ thin film IS a promising material for the high dielectrics of ULSI DRAM. In this study, $Ta_2O_5$ thin film was grown on p-type( 100) Si wafer by thermal metal organic chemical vapo deposition ( MCCVD) method and the effect of operating varialbles including substrate temperature( $T_s$), bubbler temperature( $T_ \sigma$), reactor pressure( P ) was investigated in detail. $Ta_2O_5$ thin film were analyzed by SEM, XRD, XPS, FT-IR, AES, TEM and AFM. In addition, the effect of various anneal methods was examined and compared. Anneal methods were furnace annealing( FA) and rapid thermal annealing( RTA) in $N_{2}$ or $O_{2}$ ambients. Growth rate was evidently classified into two different regimes. : (1) surface reaction rate-limited reglme in the range of $T_s$=300 ~ $400 ^{\circ}C$ and (2: mass transport-limited regime in the range of $T_s$=400 ~ $450^{\circ}C$.It was found that the effective activation energies were 18.46kcal/mol and 1.9kcal/mol, respectively. As the bubbler temperature increases, the growth rate became maximum at $T_ \sigma$=$140^{\circ}C$. With increasing pressure, the growth rate became maximum at P=3torr but the refractive index which is close to the bulk value of 2.1 was obtained in the range of 0.1 ~ 1 torr. Good step coverage of 85. 71% was obtained at $T_s$=$400 ^{\circ}C$ and sticking coefficient was 0.06 by comparison with Monte Carlo simulation result. From the results of AES, FT-IR and E M , the degree of SiO, formation at the interface between Si and TazO, was larger in the order of FA-$O_{2}$ > RTA-$O_{2}$, FA-$N_{2}$ > RTA-$N_{2}$. However, the $N_{2}$ ambient annealing resulted in more severe Weficiency in the $Ta_2O_5$ thin film than the TEX>$O_{2}$ ambient.