• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.935-941
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• 1991

Effects of calcination process and ZrO2 addition on the electrical properties of [(Ba0.82Sr0.08Ca0.1)O]m(Ti1-$\chi$Zr$\chi$)O2 ceramics have been investigated. With the variation of A/B-site ratio m of the dielectric formulations, sintering behavior and the resistivity after sintering in a reducing atmosphere have been affected by the calcination process. When the dielectric formulations of m=1.01 were sintered in a reducing atmosphere, the room-temperature resitivity of 109 {{{{ OMEGA }}.cm was obtained for samples processed with two-step calcination, which was much lower than 1012 {{{{ OMEGA }}.cm of samples calcined once. It was confirmed that high resistivity of Ca-doped BaTiO3 ceramics, after sintering in a reducing atmosphere, is maintained by acceptor-like behavior of CaTi" which is formed by Ca substitution to Ti-site. It was also found out that the critical amount of B-site Ca substitution for reduction inhibition of BaTiO3 is around 0.005 mol. With the increasing amount of ZrO2 addition to dielectric formulations, Curie peak was depressed and Curie temperature was lowered due to the enhanced diffuse phase transition.tion.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.221-239
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• 2014

The global demand for energy has been increasing since past decades. Various technologies have been working to find a suitable alternative for the generation of sustainable energy. Photovoltaic technologies for solar energy conversion represent one of the significant routes for the green and renewable energy production. Despite of remarkable improvement in solar cell technologies, the generation of power is still suffering with lower energy conversion efficiency, high production cost, etc. The major problem in improving the PV efficiency is spectral mismatch between the incident solar spectrum and bandgap of a semiconductor material used in solar cell. Luminescent materials such as rare-earth doped phosphor materials having the quantum efficiency higher than unity can be helpful for photovoltaic applications. Quantum cutting phosphors are the most suitable candidates for the generation of two or more low-energy photons for the absorption of every incident high-energy photons. The phosphors which are capable of converting UV photon to visible and near-IR (NIR) photon are studied primarily for photovoltaic applications. In this review, we will survey various near IR quantum cutting phosphors with respective to their synthesis method, energy transfer mechanism, nature of activator, sensitizer and dopant materials incorporation and energy conversion efficiency considering their applications in photovoltaics.

• Journal of the Korean Ceramic Society
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• v.53 no.5
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• pp.521-528
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• 2016

Kinetic Monte Carlo (KMC) and graph searches show that proton conduction limiting barriers and trajectories in $BaZr_{0.875}Y_{0.125}O_3$ are affected by the presence of other protons. At 1000 K, KMC limiting conduction barriers increase from 0.39 eV to 0.45 eV as the proton number is increased. The proton-proton radial distribution begins to rise at $2{\AA}$ and peaks at $4{\AA}$, which is half the distance expected, based on the proton concentration. Density functional theory (DFT) calculations find proton/proton distances of 2.60 and $2.16{\AA}$ in the lowest energy two-proton configurations. A simple average of the limiting barriers for 7-10 step periodic long range paths found via graph theory at 1100 K shows an increase in activation barrier from 0.32 eV to 0.37 eV when a proton is added. Both KMC and graph theory show that protons can affect each other's pathways and raise the overall conduction barriers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.616-621
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• 2022

Numerical simulation is a good way to predict the conversion efficiency of solar cells without a direct experimentation and to achieve low cost and high efficiency through optimizing each step of solar cell fabrication. TOPCon industrial solar cells fabricated with n-type silicon wafers on a larger area have achieved a higher efficiency than p-type TOPCon solar cells. Electrical and optical losses of the front surface are the main factors limiting the efficiency of the solar cell. In this work, an optimization of boron-doped emitter surface and front electrodes through numerical simulation using "Griddler" is reported. Through the analysis of the results of simulation, it was confirmed that the emitter sheet resistance of 150 Ω/sq along the front electrodes having a finger width of 20 ㎛, and the number of finger lines ~130 for silicon wafer of M6 size is an optimized technology for the front emitter surface of the n-type TOPCon solar cells that can be developed.

• Archives of Metallurgy and Materials
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• v.65 no.3
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• pp.1105-1110
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• 2020

Due to air pollution, global warming and energy shortage demands new clean energy conversion technologies. The conversion of industrial waste heat into useful electricity using thermoelectric (TE) technology is a promising method in recent decades. Still, its applications are limited by the low efficiency of TE materials in the operating range between 400-600 K. In this work, we have fabricated Cu_0.005Bi_0.5Sb_1.495Te₃ powder using a single step gas atomization process followed by spark plasma sintering at different temperatures (623, 673, 723, and 773 K), and their thermoelectric properties were investigated. The variation of sintering temperature showed a significant impact on the grain size. The Seebeck coefficient values at room temperature increased significantly from 127 µVK to 151 µV/K with increasing sintering temperature from 623 K to 723 K due to decreased carrier concentration. The maximum Z T values for the four samples were similar in the range between 1.15 to 1.18 at 450 K, which suggest these materials could be used for power generation in the mid-temperature range (400-600 K).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.213-220
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• 2009

The optimal condition of low temperature deposition of transparent conductive Al-doped zinc oxide (AZO) films is studied by RF magnetron sputtering method. To achieve enhanced-electrical property and good crystallites quality, we tried to deposit on glass using a two-step growth process. This process was to deposit AZO buffer layer with optimal growth condition on glass in-situ state. The AZO film grown at rf 120 W on buffer layer prepared at RF $50{\sim}60\;W$ shows the electrical resistivity $3.9{\times}10^{-4}{\Omega}cm$, Carrier concentration $1.22{\times}10^{21}/cm^3$, and mobility $9.9\;cm^2/Vs$ in these results, The crystallinity of AZO film on buffer layer was similar to that of AZO film on glass with no buffer later but the electrical properties of the AZO film were 30% improved than that of the AZO film with no buffer layer. Therefore, the cause of enhanced electrical properties was explained to be dependent on degree of crystallization and on buffer layer's compressive stress by variation of $Ar^+$ ion impinging energy.

• Progress in Medical Physics
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• v.28 no.4
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• pp.226-231
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• 2017

The aim is to investigate the spectra responsibilities of QD (Quantum Dot) for the innovation of new dosimetry application for therapeutic Megavoltage X-ray range. The unique electrical and optical properties of QD are expected to make it a good sensing material for dosimeter. This study shows the spectra responsibility of toluene based ZnCd QD and PPO (2.5-diphenyloxazol) mixed liquid scintillator. The QDs of 4 sizes corresponding to an emission wavelength (ZnCdSe/ZnS:$440{\pm}5nm$, ZnCdSeS:470, 500, $570{\pm}5nm$) were utilized. A liquid scintillator for control sample was made of toluene, PPO. The Composition of QD loaded scintillators are about 99 wt% Toluene as solvent, 1 wt% of PPO as primary scintillator and 0.05, 0.1, 0.2 and 0.4 wt% of QDs as solute. For the spectra responsibility of QD scintillation, they were irradiated for 30 second with 6 MV beam from a LINAC ($Infinity^{TM}$, Elekta). With the guidance of 1.0 mm core diameter optical fiber, scintillation spectrums were measured by a compact CCD spectrometer which could measure 200~1,000 nm wavelength range (CCS200, Thorlabs). We measured the spectra responsibilities of QD loaded organic liquid scintillators in two scintillation mechanisms. First was the direct transfer and second was using wave shifter. The emission peaks from the direct transfer were measured to be much smaller luminescent intensity than based on the wavelength shift from the PPO to QDs. The emission peak was shifted from PPO emission wavelength 380 nm to each emission wavelength of loaded QD. In both mechanisms, 500 nm QD loaded samples were observed to radiate in the highest luminescence intensity. We observed the spectra responsibility of QD doped toluene based liquid scintillator in order to innovate QD dosimetry applicator. The liquid scintillator loading 0.2 wt% of 500 nm emission wavelength QD has most superior responsibility at 6 MV photon beam. In this study we observed the spectra responsibilities for therapeutic X-ray range. It would be the first step of innovating new radiation dosimetric methods for radiation treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.334-334
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• 2013

In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.