• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.665-668
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• 2001

As reducing the physical size of devices, we can integrate more devices per the unit chip area and make its speed better. We have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane. We compared and analyzed the characteristics of such device structure, i.e., impact ionization, electric field and I-V characteristics curve with lightly-doped drain(LDD) MOSFET. We simulated MOSFET with gate lengths from 0.10 to 0.06${\mu}{\textrm}{m}$ step 0.01${\mu}{\textrm}{m}$ in according to constant voltage scaling theory.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.97-102
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• 1998

Transition metal Cr3+ and Fe3+ ion was diffused in white sapphire {0001}, {1010} crystal plane which were grown by the Verneuil method. It enhanced and changed the physical, electrical and optical properties of sapphires. After mixing the metallic oxide and metal powder, it were used for diffusion. Metallic oxide was synthesized by precipitation method and it's composition was mainly alumina which doped with chromium or ferric oxide. In case using metallic oxide, the dopping was slowly progressed and it needed the longer duration time and higher temperature, relatively. Metallic powder was vapoured under 1x10-4 torr of vacuum pressure at 1900(iron metal) and 2050(chromium)℃, first step. Diffusion condition were kept by 6atm of N2 accelerating pressure at 2050∼2150℃. Each surface density of sapphire crystal are 0.225(c) and 0.1199atom/Å2(a). The color of the Cr-doped sapphires was changed to red. Dopping reaction was come out more deep in th plane of {1010} than {0001}. It was speculated that the planar density was one of the factors to determine diffusion effect.

• Journal of Information Display
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• v.5 no.3
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• pp.8-13
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• 2004

We demonstrate a transflective liquid crystal display (LCD), doped with a chiral agent to produce a low helical twisting power, in a multimode configuration consisting of the homogeneous alignment and the hybrid alignment. The multimode transflective LCD with a single cell gap was fabricated using a single-step photoalignment technique with a self-masking process of an array of metal reflectors in the reflective region. In our configuration, the electro-optical disparity between the transmissive region and the reflective region was found to be significantly reduced by the low helical twisting power of the chiral dopant.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1072-1076
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. FTS system has two different facing targets. One is ZnO doped the content of Al 2 wt% and the other is Zn in order to decrease resistivity. The electrical, structural and optical properties of AZO thin films were investigated. To evaluate the as-deposited thin film properties, we employed four-point probe (CMT-R100nw, Changmin), Surface profiler (Alpha-step, Tencor), UV/VIS spectrometer (HP), X-ray diffractometer (XRD, Rigaku) and Field Emission Scanning Electron Microscopy (FESEM, Hitachi S-4700). As a result, We obtained that AZO thin film deposited on PES substrate at a DC Power of 150 W, working pressure of 1 mTorr and $O_2$ gas flow ratio of 0.2 exhibited the resistivity of $4.2{\times}10^{-4}\;[{\Omega}cm]$ and the optical transmittance of about 85 % in the visible range.

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.172-173
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• 2002

An erbium-ytterbium co-doped phosphate glass waveguide amplifier, fabricated by two-step ion-exchange, is presented. The performance of the amplifiers are investigated in viewpoints of net gain, pump power, and noise figure. The waveguide has propagation loss of 0.7 dB/cm Including insertion loss at 1.304 $\mu\textrm{m}$. At a signal wavelength of 1.534 $\mu\textrm{m}$, a high net gain of 12.8 dB and low noise figure of less than 3.9 dB are archived in a 4 cm long waveguide when injected by 140 ㎽ of LD pump at 0.98$\mu\textrm{m}$ in single pass configuration.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.921-926
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• 2011

This study investigates a root cause of the improved rate performance of $LiFePO_4$ after metal doping to Fesites. This is because the metal doped $LiFePO_4$/C maintains its initial capacity at higher C-rates than undoped one. Using $LiFePO_4$/C and doped $LiFe_{0.97}M_{0.03}PO_4$/C (M=$Al^{3+}$, $Cr^{3+}$, $Zr^{4+}$), which are synthesized by a mechanochemical process followed by one-step heat treatment, the Li content before and after chemical delithiation in the $LiFePO_4$/C and the binding energy are compared using atomic absorption spectroscopy (AAS) and X-ray photoelectron spectroscopy (XPS). The results from AAS and XPS indicate that the low Li content of the metal doped $LiFePO_4$/C after chemical delithiation is attributed to the low binding energy induced by weak Li-O interactions. The improved capacity retention of the doped $LiFePO_4$/C at high discharge rates is, therefore, achieved by relatively low binding energy between Li and O ions, which leads to fast Li diffusivity.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.303-306
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• 2005

We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.50-50
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• 2015

양극산화를 통하여 타이타늄 산화물 나노튜뷰를 제조하고 전기화학적 촉매능을 향상시키기 위하여 다양한 방법의 촉매 도핑방법을 소개한다. 특히, 단일(single step) 양극산화법과 전기충격법(potential shock)를 통한 촉매도핑법을 비교하며 장횡비(high aspect ratio)가 높은 나노튜뷰에 균일하고 효율적인 촉매도핑법 및 도핑된 나노튜뷰를 활용한 물분해 실험결과를 소개한다.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.111-116
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• 2000

700nm red emission(3F3longrightarrow3H6) in Tm3+ ion with 800 nm(3H6longrightarrow3H4) excitation via upconversion process has been reported only in host materials which have low phonon energies such as halide crystals. However, we observed 700nm and 480nm(1G4longrightarrow3H6) upconverted emission with 800nm excitation in several oxide glasses which has never reported. With spectroscopic analyses and lifetime measurements of each nergy level of Tm3+ ion doped in various oxide glasses, following mechanisms are suggested. For red upconversion, upconversion mechanism changed with Tm3+ concentration. While direct excitation up to 3F3 level via anti-Stokes excitation was dominated at low concentration, two-step excitation via 3H6longrightarrow3H4 and 3F4longrightarrow3F3 transitions was dominated at high concentration. For blue upconversion, two step excitation mechanism up to 1G4 level was suggested as follows : electrons are exciated up to 3H5 with direct excitation with pumping light up to 3H4 followed by multiphonon relaxation, and then additional reabsorption of pumping light excites electrons up to 1G4.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.299-305
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• 2003

Physical properties and microstructure of new coumarin 4 doped $SiO_2$-PDMS ORMOSILs, synthesized by one-step (OS, acid-catalysis) and two-step (TS, acid-base catalysis) routes of sol-gel method with varying pH (0.6 to 7) and dye content $(5\;{times}\;10^{-4}\;to\;5{\times}\;10^{-2}\;mole)$, are reported. BET, UV-visible spectroscopy and SEM were used for characterizations. The increase in acid or base concentration increased the size of pores and aggregated silica particles. The samples with pH ≤ 2.5 were transparent and attributed to the small size of pores (~20 Å) and silica particles. The samples with pH > 2.5 were translucent or opaque due to non-uniform pore system formed by voids and large aggregated silica particles. The surface area was found a key factor controlling the interactions between the gel matrix and the dye. The OS samples with the highest dye concentration exhibited the minimal values of pore size, surface area and silica particle size, resulting in the concentration-quenching phenomenon.