• Journal of the Computational Structural Engineering Institute of Korea
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• v.25 no.4
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• pp.301-305
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• 2012

In this work the mechanical behaviors of GaN nanowires are analyzed during tension, compression, and unloading deformations. The thermal conductivity of the nanowires at each deformed state is evaluated using an equilibrium Green-Kubo approach. Under tensile loading, the [0001]-oriented nanowires with hexagonal cross-sections undergo a phase transformation from wurtzite to a tetragonal structure. The phase transformation is not observed under compressive loading. The thermal conductivity decreases on going from compressive strains to tensile strains. The strain dependence of the thermal conductivity results from the relaxation time of phonon. A reverse transformation from the tetragonal structure to the wurtzite structure is observed during unloading. The thermal conductivities in the intermediate states are lower than the conductivity in the wurtzite structure at same strain. Such differences in the thermal conductivity between different atomic structures are mainly due to changes in the group velocity of phonon.

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.311-314
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• 2005

We investigated the composition dependence of the tunneling magnetoresistance (TMR) behavior and the stability of the magnetic tunnel junctions (MTJs) with TiAlOx barrier and the microstructural evolution of TiAl alloy films. The TMR ratio increased up to $49\%$ at $5.33\;at\%$ Ti. In addition, a significant tunneling magnetoresistance (TMR) value of $20\%$ was maintained after annealing at $450^{\circ}C$, and the breakdown voltage ($V_B$) of and 1.35 V were obtained in the MTJ with $5.33\;at\%$ Ti-alloyed AlOx barrier. These results were closely related to the enhanced quality of the barrier material microstructure in the pre-oxidation state. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal and electrical stability of the MTJs.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.492-497
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• 2001

We report the characteristics and the dependence of sputter-deposited Ta films on the process parameters. The properties of as-deposited Ta films such as deposition rate, resistivity, Rs uniformity, reflectivity, and stress were investigated and analyzed as a function of process parameter using a statistical experimental method. The functional relationships between the independent and dependent variables were predicted by surface response. The optimal deposition condition of DC magnetron sputtered Ta films was obtained at the chamber pressure of 2 mTorr, power density of 8 W/$\textrm{cm}^2$, and substrate temperature of 2$0^{\circ}C$ by means of resistivity and Rs uniformity. The fitness value for quadratic model as evaluated by the R- square was 0.85~ 0.9 without pooling. The as-deposited Ta films exhibited the resistivity of ~180$\mu$$\Omega$cm with Rs uniformity of ~2%. The transmission electron microscopy and x-ray diffractometry identified that the phase of as-deposited film was $\beta$-Ta having the grain size of 100~200.

• Transactions of the Korean Society of Automotive Engineers
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• v.14 no.5
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• pp.73-78
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• 2006

In this paper, creep tests of Mg-Zn-Mn and Mg-Zn-Mn-Ca alloys, which were casted by mold with Mg-3%Zn-1%Mn and Mg-3%Zn-1%Mn-0.2%Ca, were done under the temperature range of 473-573K and the stress range of 23.42-78.00Mpa. The activation energies and the stress exponents were measured to investigate the creep plastic deformation of those alloys, and the rupture lifes of Mg-Zn-Mn alloy were also measured to investigate the fracture behavior. From the results, the activation energy of Mg-Zn-Mn and Mg-Zn-Mn-Ca alloys under the temperature range of 473-493K were measured as 149.87, 145.98KJ/mol, respectively, and the stress exponent were measured as 5.13, 6.06 respectively. Also the activation energies Mg-Zn-Mn and Mg-Zn-Mn-Ca alloys under the temperature range of 553-573K were obtained as 134.41, 129.22KJ/mol, respectively, and tress exponent were obtained as 3.48, 4.63, respectively. Finally stress dependence of rupture life and the activation energy of rupture life of Mg-Zn-Mn under the temperature range of 473-493K was measured as 8.05, 170.0(KJ/mol), respectively, which were a little higher than the results of steady state creep.

• The Korean Journal of Physiology and Pharmacology
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• v.10 no.2
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• pp.71-77
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• 2006

The goal of this study was to analyze the effects of genistein, a widely used tyrosine kinase inhibitor, on cloned Shaw-type $K^+$ currents, Kv3.1 which were stably expressed in Chinese hamster ovary (CHO) cells, using the whole-cell configuration of patch-clamp techniques. In whole-cell recordings, genistein at external concentrations from 10 to $100{\mu}M$ accelerated the rate of inactivation of Kv3.1 currents, thereby concentration-dependently reducing the current at the end of depolarizing pulse with an $IC_{50}$ value of $15.71{\pm}0.67{\mu}M$ and a Hill coefficient of $3.28{\pm}0.35$ (n=5). The time constant of activation at a 300 ms depolarizing test pulses from -80 mV to +40 mV was $1.01{\pm}0.04$ ms and $0.90{\pm}0.05$ ms (n=9) under control conditions and in the presence of $20{\mu}M$ genistein, respectively, indicating that the activation kinetics was not significantly modified by genistein. Genistein $(20{\mu}M)$ slowed the deactivation of the tail current elicited upon repolarization to -40 mV, thus inducing a crossover phenomenon. These results suggest that drug unbinding is required before Kv3.1 channels can close. Genistein-induced block was voltage-dependent, increasing in the voltage range $(-20\'mV{\sim}0\'mV)$ for channel opening, suggesting an open channel interaction. Genistein $(20{\mu}M)$ produced use-dependent block of Kv3.1 at a stimulation frequency of 1 Hz. The voltage dependence of steady-state inactivation of Kv3.1 was not changed by $20{\mu}M$ genistein. Our results indicate that genistein blocks directly Kv3.1 currents in concentration-, voltage-, time-dependent manners and the action of genistein on Kv3.1 is independent of tyrosine kinase inhibition.

• The Journal of the Society of Korean Medicine Diagnostics
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• v.11 no.2
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• pp.96-115
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• 2007

Background and Purpose: Electroencephalogram(EEG) is a multi-scaled signal consisting of several components of time series with different origins. Recently, because of the absence of an identified metric which quantifies the complex amount of information, there are many limitations in using such a linear method. According to chaos theory, irregular signals of EEG can also result from low dimensional deterministic chaos. Chaotic nonlinear dynamics in the EEG can be studied by calculating the correlation dimension. The aim of this study is to analyze correlation between the correlation dimension of EEG and psychological Test (TCI). Methods: Before and after moxibustion treatment, EEG raw data were measured by moving windows during 15 minutes. The correlation dimension(D2) was calculated from stabilized 40 seconds in 15 minutes data. 8 channels EEG study on the Fp, F, T, P was carried out in 30 subjects. Results: Correlation analysis of TCI test is calculated with deterministic non-linear data and stochastic non-linear data. 1. Novelty seeking in temperament is positive correlated with D2 of EEG on Fp. 2. reward dependence in temperament is positive correlated with D2 of EEG on T3,T4 and negative correlated with D2 of EEG on P3,P4. 3. self directedness in character is positive correlated with D2 of EEG on F4, P3. 4. Harm avoidance is negative correlated with D2 of EEG on Fp2, T3, P3. Conclusion: These results suggest that nonlinear analysis of EEG can quantify dynamic state of brain abolut psychological Test (TCI).

• KIISE Transactions on Computing Practices
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• v.21 no.7
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• pp.458-463
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• 2015

These days, streaming users are using ABR (Adaptive Bitrate) technique services by requesting the most adequate video rate selectively based on their own channel states. Most ABR related video rate adaptation techniques are only focused on real-time bitrate adaptations based on their own channel state, and misses energy limited characteristics that come from a mobile device's battery dependence. In other words, the mobile device's important characteristics and accompanying energy consumption are not being considered and causes dissatisfaction over streaming services. In this paper, we propose energy efficient prefetching based dynamic adaptive video streaming techniques, which saves unnecessary consumed energy while providing video rates of the same performance. Our scheme continuously turns off energy modules with enough streaming in the buffer and turns on in case of the opposite situation to save energy. Through the performance evaluation, this study's proposed scheme is 60% better than the previous work at global average mobile download speed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.167-168
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• 2007

$CdIn_2S_4$ (110) films were grown on semi-insulating GaAs (100) by a hot wall epitaxy method. Using photocurrent (PC) measurement, the PC spectra in the temperature range of 30 and 10 K appeared as three peaks in the short wavelength region. It was found that three peaks, A-, B-, and C-excitons, correspond to the intrinsic transition from the valence band states of ${\Gamma}_4(z),\;{\Gamma}_5(x),\;and\;{\Gamma}_5(y)$ to the exciton below the conduction band state of ${\Gamma}_1(s)$, respectively. The 0.122 eV crystal field splitting and the 0.017 eV spin orbit splitting were obtained. Thus, the temperature dependence of the optical band gap obtained from the PC measurement was well described by $E_g$(T)=2.7116eV - $(7.65{\times}10^{-4}\;eV/K)T^2$/(425+T). But, the behavior of the PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. This phenomenon had ever been reported at a PC experiment on the bulk crystals grown by the Bridgman method. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Consequently, the trapping centers due to native defects in the $CdIn_2S_4$ film were suggested to be the causes of the decrease in the PC signal with decreasing temperature.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.82-87
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• 2001

The hot deformation behavior of Ti-6Al-2Sn-4Zr-6Mo(Ti6246) alloy was investigated in both the $\alpha$+$\beta$ and $\beta$-phase fields by conducting compression tests over a strain rate range of $10^{-3}s^{-1}$ to $10^0s^{-1}$. The flow stress was increased with increasing strain rate and decreasing test temperature. The flow curves obtained at temperatures below 90$0^{\circ}C$ exhibited a flow softening. However, in the $\beta$-phase field, above 95$0^{\circ}C$, the flow stress increased monotonically with plastic strain approaching steady state values. Constitutive equations for the dependence of flow stress on strain, strain rate, and temperature were developed through the analysis of the flow curves.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.342-345
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• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.