• Title/Summary/Keyword: Stability threshold

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An Analysis of Coupled Oil-lubricated Groove Journal and Thrust Bearings for Spindle Motor (빗살무늬 저널베어링과 스러스트 베어링으로 이루어진 오일윤활 스핀들 모터 베어링 해석)

  • 오상만;임윤철
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2000.11a
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    • pp.235-242
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    • 2000
  • In this paper, the dynamic characteristics of coupled herringbone groove journal bearings and spiral groove thrust bearings with conical motion were numerically analyzed, The bearing performance characteristics were calculated by the perturbation method and are solved by FDM. Stability of bearing was obtained from the threshold of instability.

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An adaptive method of multi-scale edge detection for underwater image

  • Bo, Liu
    • Ocean Systems Engineering
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    • v.6 no.3
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    • pp.217-231
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    • 2016
  • This paper presents a new approach for underwater image analysis using the bi-dimensional empirical mode decomposition (BEMD) technique and the phase congruency information. The BEMD algorithm, fully unsupervised, it is mainly applied to texture extraction and image filtering, which are widely recognized as a difficult and challenging machine vision problem. The phase information is the very stability feature of image. Recent developments in analysis methods on the phase congruency information have received large attention by the image researchers. In this paper, the proposed method is called the EP model that inherits the advantages of the first two algorithms, so this model is suitable for processing underwater image. Moreover, the receiver operating characteristic (ROC) curve is presented in this paper to solve the problem that the threshold is greatly affected by personal experience when underwater image edge detection is performed using the EP model. The EP images are computed using combinations of the Canny detector parameters, and the binaryzation image results are generated accordingly. The ideal EP edge feature extractive maps are estimated using correspondence threshold which is optimized by ROC analysis. The experimental results show that the proposed algorithm is able to avoid the operation error caused by manual setting of the detection threshold, and to adaptively set the image feature detection threshold. The proposed method has been proved to be accuracy and effectiveness by the underwater image processing examples.

Investigation on the Stability Enhancement of Oxide Thin Film Transistor (산화물반도체 트랜지스터 안정성 향상 연구)

  • Lee, Sang Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.5
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    • pp.351-354
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    • 2013
  • Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

A Study on the Analysis and Control of Voltage Stability (전압안정성 분석 및 제어에 관한 연구)

  • You, Seok-Koo;Kim, Kyu-Ho;Jang, Su-Hyeong
    • Proceedings of the KIEE Conference
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    • 1993.07a
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    • pp.64-66
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    • 1993
  • This paper presents an efficient method to calculate voltage collapse point and to improve static voltage stability. To evaluate static voltage stability in power systems. it is necessary to get critical loading points. For this purpose, we use linear programming to calculate efficiently voltage collapse point. And if index value becomes larger than given threshold value, vol tags stability is improved by compensation of reactive power at selected bus. This algorithm is verified by simulation on the sample system.

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Monetary Policy Independence during Reversal Phases of Domestic-Foreign Interest Rate Differentials

  • Kyunghun Kim
    • East Asian Economic Review
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    • v.28 no.2
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    • pp.221-244
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    • 2024
  • This study examines how the independence of monetary policy changes in situations where the interest rate differential between domestic and foreign rates inverts, utilizing the trilemma indices. For analysis, this paper uses the trilemma indices developed by Kim et al. (2017) to analyze the relationship between the monetary policy independence index and the other two trilemma indices, namely the capital account openness index and the exchange rate stability index, across 45 countries from 2002 to 2018. The analysis reveals that the trilemma's validity is contingent. In particular, no statistically significant negative correlation was found between the monetary policy independence index and exchange rate stability index during periods of interest rate differential inversion. A positive correlation emerges between exchange rate stability and the independence of monetary policy, particularly when the inverted interest rate differential exceeds a certain threshold. This situation, where the exchange rate remains stable despite low domestic interest rates, implies that the central bank is effectively managing monetary policy to appropriately respond to economic conditions, which is reflected in the monetary policy independence index.

Application of Dynamic Reliability Model to Analysis of Armor Stability of Rouble-Mound Breakwaters (경사제 피복재의 안정성 해석에 대한 동적 신뢰성 모형의 적용)

  • Kim, Sung-Ho;Lee, Cheol-Eung
    • Journal of Industrial Technology
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    • v.24 no.A
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    • pp.215-226
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    • 2004
  • A dynamic reliability model which can take into account the time history of loading sequences may be applied to the analyses of the hydraulic stability of armor units on rubble-mound breakwaters. All the parameters related to the stability of structures have been considered to be constants in the deterministic model until now. Thus, it is impossible to study the effects of some uncertainties of the related random variables on the stability of structures. In this paper, the dynamic reliability model can be developed by POT(Peak Over Threshold) method in order to take into account the time history of loading sequences and to investigate the temporal behaviors of stability of structure with its loading history. Finally, it is confirmed that the results of dynamic reliability model agree with straight- forwardly those of AFDA(Approximate Full Distribution Approach) of the static reliability model for the same input conditions. In addition, the temporal behaviors of probability of failure can be studied by the dynamic reliability model developed to analyze the hydraulic stability of armor units on rubble-mound breakwaters. Therefore, the present results may be useful for the management of repair and maintenance over the whole life cycle of structure.

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Voltage Stability Prediction on Power System Network via Enhanced Hybrid Particle Swarm Artificial Neural Network

  • Lim, Zi-Jie;Mustafa, Mohd Wazir;Jamian, Jasrul Jamani
    • Journal of Electrical Engineering and Technology
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    • v.10 no.3
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    • pp.877-887
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    • 2015
  • Rapid development of cities with constant increasing load and deregulation in electricity market had forced the transmission lines to operate near their threshold capacity and can easily lead to voltage instability and caused system breakdown. To prevent such catastrophe from happening, accurate readings of voltage stability condition is required so that preventive equipment and operators can execute security procedures to restore system condition to normal. This paper introduced Enhanced Hybrid Particle Swarm Optimization algorithm to estimate the voltage stability condition which utilized Fast Voltage Stability Index (FVSI) to indicate how far or close is the power system network to the collapse point when the reactive load in the system increases because reactive load gives the highest impact to the stability of the system as it varies. Particle Swarm Optimization (PSO) had been combined with the ANN to form the Enhanced Hybrid PSO-ANN (EHPSO-ANN) algorithm that worked accurately as a prediction algorithm. The proposed algorithm reduced serious local minima convergence of ANN but also maintaining the fast convergence speed of PSO. The results show that the hybrid algorithm has greater prediction accuracy than those comparing algorithms. High generalization ability was found in the proposed algorithm.

Solution-based Multistacked Active Layer IGZO TFTs

  • Kim, Hyunki;Choi, Byoungdeog
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.351.1-351.1
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    • 2014
  • In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.

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Influence of in-situ remote plasma treatment on characteristics of amorphous indium gallium zinc oxide thin film-based transistors

  • Gang, Tae-Seong;Gu, Ja-Hyeon;Hong, Jin-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.257-257
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    • 2011
  • The amorphous indium-gallium-zinc-oxide (a-IGZO) materials for use in high performance display research fields are strongly investigated due to its good performance, such as high mobility and better transparency. However, the stability of a-IGZO materials is increasingly becoming one of critical issues due to the sub-gap electron trap sites induced by rough interfaces during deposition processing. It is well-known that the threshold voltage shift is related to interface roughness and oxygen vacancy formed by breaking weak chemical bonds. Here, we report the better properties of transparent oxide transistors by reducing the threshold voltage shift with an external rf plasma supported magnetron sputtering system. Mainly, our sputtering method causes the surface of sample to be sleek, so that it prevents the formation of various defects, such as shallow electron trap sites in the interface. External rf power was applied from 0 to 50W during RF sputtering process to enhance the stability of our oxide transistor without having a large voltage shift. To observe the effects of external rf-plasma source on the properties of our devices, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) are carried out to observe surface roughness and morphology of sputtered thin film. In addition, typical electrical properties, such as I-V characteristics are analyzed.

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Low voltage stability of a-Si:H TFTs with $SiN_x$ dielectric films prepared by PECVD using Taguchi methods

  • Wu, Chuan-Yi;Sun, Kuo-Sheng;Cho, Shih-Chieh;Lin, Hong-Ming
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.272-275
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    • 2005
  • The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.

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