• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.423-423
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• 2011

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation (REDOX) reaction will occur on the ZnO surface and generate O2- and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into CO2 and H2O. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with TiO2. Zn(OH)2 was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.562-562
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• 2012

Recently, graphene and graphene-based materials such as graphene oxide (GO) or reduced graphene oxide (R-GO) draws a great attention for electronic devices due to their structures of one atomic layer of carbon hexagon that have excellent mechanical, electrical, thermal, optical properties and very high specific surface area that can be high potential for chemical functionalization. R-GO is a promising candidate because it can be prepared with low-cost from solution process by chemical oxidation and exfoliation using strong acids and oxidants to produce graphene oxide (GO) and its subsequent reduction. R-GO has been used as semiconductor or conductor materials as well as sensing layer for bio-molecules or ions. In this work, reduced graphene oxide field-effect transistor (R-GO FET) has been fabricated with ITO extended gate structure that has sensing area on ITO extended gate part. R-GO FET device was encapsulated by tetratetracontane (TTC) layer using thermal evaporation. A thermal annealing process was carried out at $140^{\circ}C$ for 4 hours in the same thermal vacuum chamber to remove defects in R-GO film before deposition of TTC at $50^{\circ}C$ with thickness of 200 nm. As a result of this process, R-GO FET device has a very high stability and durability for months to serve as a transducer for sensing applications.

• Korean Journal of Materials Research
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• v.21 no.11
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• pp.596-603
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• 2011

The very high temperature gas reactor (VHTR) is one of the next generation nuclear reactors for its safety, long-term stability, and proliferation-resistance. The high operating temperature of over 800$^{\circ}C$ enables various applications with high energy efficiency. Heat is transferred from the primary helium loop to the secondary helium loop through the intermediate heat exchanger (IHX). The IHX material requires creep resistance, oxidation resistance, and corrosion resistance in a helium environment at high operating temperatures. A Ni-based superalloy such as Alloy 617 is considered as a primary candidate material for the intermediate heat exchanger. In this study, the microstructures of Alloy 617 crept in pure helium and air environments at 950$^{\circ}C$ were observed. The rupture time in helium was shorter than that in air under small applied stresses. As the exposure time increased, the thickness of outer oxide layer of the specimens clearly increased but delaminated after a long creep time. The depth of the carbide-depleted zone was rather high in the specimens under high applied stress. The reason was elucidated by the comparison between the ruptured region and grip region of the samples. It is considered that decarburization caused by minor gas impurities in a helium environment caused the reduction in creep rupture time.

• Journal of IKEEE
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• v.27 no.1
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• pp.19-24
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• 2023

Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.21-28
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• 2000

Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$Ω$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.30 no.1
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• pp.117-122
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• 2004

Exessive UV radiation causes a lot of problems in our skin. In order to find out the alternative UV absorber that can safely be used in cosmetics, we have screened various natural extracts in terms of their UV absorbing effect. Some natural extracts, which possess antioxidative activities, have also been found to retard the oxidation process in our experiment. Natural compound such as 7-hydroxycymopol, baicalein, etc. could be transformed into adjuvant UV absorber by chemical modification. In cosmetics, its chemical stability against UV radiation, exposure to oxygen and other factors could be improved by using the silicone or W/S type emulsion. The values of MED (minimal erythema dose) were improved to 0.10 ${\pm}$ 0.02∼0.11 ${\pm}$ 0.02 by adding this natural extract into the cosmetic formulations. In conclusion, the results of the present study show that natural extracts could be used as an adjuvant UV absorber, if they are stabilized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.554-559
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• 2005

Ni/Cr thin film is very interesting material as thin film resistors, filaments, and humidity sensors because their relatively large resistivity, more resistant to oxidation and a low temperature coefficient of resistance (TCR). These interesting properties of Ni/Cr thin films are dependent upon the preparation conditions including the deposition environment and subsequent annealing treatments. Ni/Cr thin films of 250 nm were deposited by DC magnetron sputtering on $Al_2O_3/Si$ substrate with 2-inch Ni/Cr (80/20) alloy target at room temperature for 45 minutes. Annealing treatments were performed at $400^{\circ}C,\;500^{\circ}C,\;and\;600^{\circ}C$ for 6 hours in air or $H_2$ ambient, respectively. The clear crystal boundaries without crystal growth and the densification were accomplished when the pores were disappeared in air ambient. Most of surface was oxidic including NiO, $Ni_2O_3$ and $Cr_xO_y$(x=1,2, y=2,3) after annealing in air ambient. The crystal growth in $H_2$ ambient was formed and stabilized by combination with each other due to the suppression of oxidized substance on film surface. Most oxidic Ni was restored when the oxidic Cr was present due to its stability in high-temperature $H_2$ ambient.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.13 no.3
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• pp.229-233
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• 2015

Developing novel anode materials to replace the Pt anode currently used in electrolytic reduction is an important issue on pyroprocessing. In this study, the electrochemical behavior of TiN was investigated as the conductive ceramic anode which evolves O₂ gas during the reaction. The feasibility and stability of the TiN anode was examined during the electrolytic reduction of UO₂. The TiN anode could electrochemically convert UO₂ to metallic U in a LiCl–Li₂O molten salt electrolyte. No oxidation of TiN was observed during the reaction; however, the formation of voids in the bulk section appeared to limit the lifetime of the TiN anode.

• Journal of Korean Society of Environmental Engineers
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• v.38 no.7
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• pp.364-370
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• 2016

In this paper, the technique that determines efficient process combinations for the ultrapure water production was studied. The ultrapure water is one of the industrial water used in industrial activity and required in the advanced technology integrated industry. It is produced by combined process including filtration, ion exchange processes, the reverse osmosis (RO) process, degassing (DG) process and UV-oxidation (UVox) process. An ultrapure water production process consists of 15-20 different water treatment unit process. In this study, a pilot plant was built and operated to research the design parameters for the individual process. Through the pilot plant operation, 19 effective combinations were optimized among various processes. And then, 11 of them satisfied the final quality of the ultrapure water. The stability and economic feasibility were evaluated about the final 11 process combinations.

• Korean Journal of Materials Research
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• v.6 no.12
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• pp.1270-1278
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• 1996

고진공하에서 벽개된 GaAs를 대기중 노출시킨후, 결합상태 및 조성의 변화를 정량적으로 연구하여 Ga의 우선적 산화경향 및 결합의 붕괴에 기인한 원소상태 Ga 및 As의 생성을 관찰하였다. 대기중 노출시, 초기 Ga/As 비(=0.01)는 Ga의 우선적 산화에 의해 증가하였으며 원소상태 As의 증가와 더불어 일정값(=1.25)으로 유지되었다. 습식세정된 GaAs와 유황처리된 (S-passivated)GaAs를 각각 대기중에 노출시켜, 각각의 표면상태 변화를 비교, 관찰하였다. 유황처리된 GaAs는 습식세정처리만한 GaAs에 비해 산화막 성장이 크게 억제되었고, 이는 (NH4)2Sx 용액 처리로 형성된 Ga-S 및 As-S 겹합의 표면보호 효과에 기인한 것이다. 특히 대기중 노출에 따른 유황처리된 GaAs 표면조성 및 결합상태 변화의 정량적 관찰을 통하여, 유황보호막(S-passivation layer) 및 GaAs 표면과 대기중 산소와의 반응 기구를 규명할 수 있었다. 대기중 노출에 따라, 표면의 Ga-S 및 As-S 결합은 대기중 산소와 반응하여 점차 붕괴, 감소하는 경향을 나타냈으며, 이와 동시에 unpassivated 상태의 GaAs가 산소와 반응하여 Ga-O 결합을 형성함을 관찰할 수 있었다. 본 연구에서는 X-선 광전자 분광기를 사용하여 GaAs 표면 조성 및 결합상태의 변화를 관찰하였다.