• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.6
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• pp.267-272
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• 2006

A series of $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ phosphors have been synthesized by solid-state reaction. The photoluminescence and structural properties of $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ have been examined. The $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ phosphors have a strong absorption at 400 nm, which is the emission wavelength of a violet light emitting diode (LED). The emission peaks of $SrGa_2S_4:Ce,Na$are located at 448 nm and 485 nm. The partial replacement of Sr by Ca in $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ causes a red shift of emission wavelengths. The $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ can be used as blue emitting phosphors pumped by the violet LED for fabricating the multi-band white LED.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2001.05a
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• pp.158-162
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• 2001

SrS:Ce thin films for blue EL devices are prepared by Hot Wall Method and their crystallographic and optical characteristics are investigated by various methods. Deposition rates are decreased with substrate temperature, but increased with SrS cell temperature. The crystallographic characteristics are strongly affected by deposition rates. The peak of photoluminescence are found ar 470 and 540nm.

• Journal of Advanced Marine Engineering and Technology
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• v.25 no.6
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• pp.1272-1280
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• 2001

SrS:Ce thin films for blue EL devices were prepared by Hot Wall Method and their crystallographic and optical characteristics were investigated by various methods. Deposition rates were increased with SrS cell temperature, but the rates were independent on substrate temperature and sulfur pressure. The optical and crystallographic characteristics were strongly affected by deposition rates. The band gap energies obtained by optical transmission spectra and Full Width at Half Maximum of (200) plane in X-ray diffraction patterns were found at 4.5-4.6eV and $0.22~0.26^{\circ}$, respectively. The photoluminescence from SrS:Ce thin tiles showed a greenish blue omission peaked at 470 and 540nm.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.613-616
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• 2001

The effect of codopants on the electroluminescent properties for SrS-Ce based thin films was studied. The active layer was deposited by electron beam with sulfur The wavelength of eletroluminecence shifted with codopants and their concentrations. The intensity ratio of blue to green were found In the CeP-doped device, but the highest total intensity of luminance showed about 850cd/$m^2$ in the CeCl$_3$+KCL-doped device, which indicates that codopants are playing an important role of luminance. At any device, the luminance was the strongest at 0.2 mol% concentration among the concentration studied, suggesting the existence of optimum concentration. By post-annealing Luminance of most devices was improved, but the shift of wavelength was not observed.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2006.06a
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• pp.259-260
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• 2006

Effects of Rb doping on the aging characteristics have been studied in SrS:Ce thin film electroluminescence (EL) devices. It has been found that a luminance saturation and decrease of an EL efficiency are suppressed by Rb doping. For the SrS:Ce,Rb device, a luminance and an efficiency after 1024 h of aging at 1 kHz drive maintain at about 70% and 80% of the initial values, respectively.

• Journal of the Korean Chemical Society
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• v.50 no.6
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• pp.471-476
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• 2006

series of Ca1-xSrxS:Ce phosphors were synthesized by solid-state reactions. The Ca1-xSrxS:Ce phosphors have a strong absorption in region from 430 nm to 470 nm. The emission peaks of CaS:Ce are located at 510 nm and 570 nm. The partial replacement of Ca by Sr in Ca1-xSrxS:Ce causes a blue shift of emission wavelengths. The Ca1-xSrxS:Ce can be used as bluish green and yellow emitting phosphors for white light emitting diodes (LEDs) pumped by the blue LED. We reported the optical properties of Ca1-xSrxS:Ce phosphors for application in phosphor converted white LEDs.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.115-120
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• 1991

The effect of ZnS buffer layer on the brightness and luminous efficiency of SrS : Ce, Cl thin film EL device is investigated. The driving voltage is 210V for the cell with ZnS buffer layer, but 220V without ZnS buffer layer. The frequency range is 500 Hz-20 kHz. The. brightness is proportional to the product of the frequency and the transferred charge density within measured range. The luminous efficiency is independent on the frequency and/or driving voltage. By using the ZnS buffer layer, the luminescence characteristics of active layer is improved. The experimental data shows 0.12 Im/W of the luminous efficiency for the device with ZnS buffer layer, but 0.061m/W without ZnS buffer layer.

• Journal of the Korean Chemical Society
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• v.50 no.3
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• pp.237-242
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• 2006

Nowadays, LEDs has been applied to the luminescent devices of various fields because of the invention of high efficient blue chip. Recently, especially, the white LEDs composed of InGaN blue chips and a yellow phosphor (YAG:Ce3+) have been investigated extensively. With the exception of YAG:Ce3+ phosphor, however, there are no reports on yellow phosphor that has significant emission in the 450~470 nm excitation range and this LED system is the rather low color rendering index due to their using two wavelength. Hence, we have attempted to synthesize thiogallate phosphors that efficiently under the long wavelength excitation range in the present case. Among those phosphors, we have synthesized Sr2Ga2S5:Eu2+ phosphor by change the host material of SrGa2S4:Eu2+ which is well known phosphor and we investigated the luminescent properties. In order to obtain the harmlessness and simplification of the synthesis process, sulfide materials and mixture gas of 5 % H2/95 % N2 were used instead of the CS2 or H2S gas. The prepared phosphor shows the yellow color peaking at the 550 nm wavelength and it possible to emit efficiently under the broad excitation band in the range of 300~500 nm. And this phosphor shows high luminescent intensity more than 110 % in comparison with commercial YAG:Ce3+ phosphor and it can be applied for UV LED due to excitation property in UV region.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.16-23
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• 2000

The epitaxial growth of $CeO_2$ films has been investigated on three different substrates-Si(111), $SrTiO_3$(001), and MgO(001)-over wide range of growth parameters using oxygen-plasma-assisted molecular beam epitaxy. Pure-phase, single-crystalline epitaxial films of $CeO_2$ (001) have been grown only on $SrTiO_3$(001). We discuss the growth conditions in conjunction with the choice of substrates required to synthe-size this oxide, as well as the associated characterization by menas of x-ray diffraction, reflection high-energy electron diffraction, low-energy electron diffraction, and x-ray photoelectron spectroscopy and diffraction. Successful growth of single crystalline $CeO_2$ depends critically on the choice of substrate and is rather insensitive to the growth conditions studied in this investigation. $CeO_2$(001) films on $SrTiO_3$exhibit the sturcture of bulk $CeO_2$ without surface reconstructions. Ti outdiffusion is observed on the films grown temperatures above $650^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.335-338
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• 2000

SrS:Ce thin films for blue EL devices are prepared by Hot Wall Method and their crystallographic and optical characteristics are investigated by various methods. Deposition rates are decreased with substrate temperature, but increased with SrS cell temperature. The crystallographic characteristics are strongly affected by deposition rates. The peak of photoluminescence are found at 470 and 540nm.