• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.239-242
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• 1998

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$ (SCT) thin films are deposited on Pt-coated electrode using RF magnetron sputtering method at various substrate temperature. Dielectric constant of SCT thin films is increased with increased as the deposition temperature and changes almost linearly in temperature ranges from -80 to +90[$^{\circ}C$]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.ure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1084-1087
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• 2001

The (Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 100[$^{\circ}C$]∼500[$^{\circ}C$]. Also, the crystallinity of SCT thin films are obtained at the substrate temperature above 400[$^{\circ}C$]. SCT thin films had (111) preferred orientation. The dielectric constant changes almost linearly in temperature ranges of-80∼+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.1. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1144-1147
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• 2002

Ferroelectric $Sr_xBa_{1-x}Nb_2O_6(0.25{\leq}x{\leq}0.75)$ thin films were prepared by the Ion Beam Sputtering method. Deposit onto Pt/Ti/$SiO_2$/Si(100) substrates. The deposited thin films were heat-treated for crystallization. Microstructure and crystallization behavior were examined using FE-SEM, XRD. Ferroelectric hysteresis were measured. The measured remanent polarization and coercive field values were $38{\mu}C/cm^2$ and 120kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.290-291
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• 2006

We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.5-11
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• 2008

To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.107-112
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• 1996

Thin films of $Pb(Zr_xTi_{1-x})O_3$)PZT) were grown on $Pt/SiO_2/Si(100)$ at various temperatures by RF magnetron sputtering method. Surface morphology of these films were studied by using Atomic Force Microscopy(AFM). These films were also analyzed by using Atomic Force Microscopy(AFM). These films were also analyzed by using X-ray photoemission spectroscopy(XPS) for determining their chemical composition and their depth profile. It was found that the films grown at the substrated temperature of $300^{\circ}C$ have much more smooth surface characteristics in comparison to those films grown at room temperature, which may be explained in terms of surface mobility of ad-atoms such as Pb. It was also found that Pb enrichment in the near surface region enhanced for the films grown at higher substate temperature.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.715-722
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• 1994

Off-axis supttering using shielder was used to efficiently prevent negative oxygen ions from resputtering deposited films. In this method, the substrate was located vertically to the target and shielded by the semicircled steel plate. By using this method, the resputtering could be reduced, and 2223 high-Tc phase could be formed at the lower substrate temperature and in the broader temperature region. As increasing the substrate temperature, 2212, 2223, 2212 superconducting phases were formed by turns. 2223 phase was formed above 2$\times$10-2 torr, and 2212 phase was formed above 4$\times$10-2 torr.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1560-1563
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• 2005

In this study, we introduce indium tin oxide (ITO) thin films grown by using a low-frequency magnetron sputtering method (LFMSM). Characteristics of the ITO thin films deposited on polyethersulfone (PES) and polyethylene terephthalate (PET) substrates are investigated. Experiments were carried out as a function of deposition time. ITO thin films on polymer substrates revealed amorphous structure. The optical, the electrical and structural properties of the films on PES substrate are better than those on PET substrates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.671-676
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.213-214
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• 2008

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 60[W] and 70/30, respectively. The crystallinity of SBN thin films were increased with increase of substrate temperature in the temperature range of 100~400[$^{\circ}C$]. The capacitance of SBN thin films were increased with the increase of substrate temperature.