• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.419-421
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• 2008

Sputter deposition on a Pt counter electrode was studied using RF plasma as the improvement of conversion efficiency for dye-sensitized solar cells (DSC). The effects of the sputtering thickness and incident angle on a Pt counter electrode for DSC was scrutinized. We conducted the experiment to get the optimal sputtering time for the performance of the DSC. Under the sputtering time condition of 120 seconds, we varied the incident angles of substrate from $0^{\circ}$ to $60^{\circ}$. Under standard test condition (AM 1.5, 100mW/$cm^2$), we obtained the maximum efficiency of 4.61% at the incident angle of $40^{\circ}$ with an active cell area of $1cm^2$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.3
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• pp.588-593
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• 2010

Sputter deposition on a Pt counter electrode was studied using radio frequency (RF) plasma as the improvement of incident photon to current conversion efficiency (IPCE) for dye-sensitized solar cells (DSCs). Effects of the sputtering thickness and the incident angle on a Pt counter electrode for DSCs were investigated. Experiments to get the optimal sputtering time for the performance of the DSCs were carried out. And it is found that the optimized sputtering time was 120 seconds, in addition, the incident angles of the substrate was adjusted from $0^{\circ}$ to $60^{\circ}$. The maximum efficiency of 5.37% was obtained at the incident angle of $40^{\circ}$ with an active cell area of $1cm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.297.1-297.1
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• 2016

높은 굴절률(n_H) 의 ITO films 위에 homoepitaxial 성장 기술로 낮은 굴절률(n_L) 의 ITO를 이중으로 증착한 반사방지막을 연구하였다. 우리는 기판 상에 vapor flux 입사 각도 및 columnar 성장막과 경사각 사이의 상관 관계에 기초하여 낮은 굴절률의 ITO 박막을 Oblique-angle sputtering을 사용하여 증착하였다. Oblique-angle 증착동안 columns 경사각이 incident flux angle 의 증가에 따라 linear 하게 증가했다. 반대로 incident flux angle 이 증가할때 ITO 박막의 굴절률은 현저하게 감소하였는데, 이는 원자의 shadowing effect와 표면 diffusion으로 인하여 필름내의 porosity를 증가시킨 것으로 보여진다. 이러한 결과로 homoepitaxial으로 성장시킨 ITO 이중층 구조 반사방지막 특성이 향상되었으며, 유리 기판 위에서 weight average reflectance가 n_L=1.72, n_H=1.90 에서 6.57%를 달성하였다.

• Applied Science and Convergence Technology
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• v.27 no.1
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• pp.19-22
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• 2018

The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.26-29
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• 2018

The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.395-398
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• 2000

Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.55-62
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• 1999

Monte Carlo ion scattering program is improved with the single scattering methods where the total cross section and the mean free path are calculated as a function of atomic density during ion scattering in matter. The relations among the parameters of incident ions and substrate materials are investigated to the sputtering phenomena. The sputtering yield has been analyzed with the dependence on the incident ion species and energy, incident angle, and surface binding energy. The energy distribution of sputtered particles is discussed.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.100-105
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• 2020

Recently, as display and semiconductor devices have been miniaturized and highly integrated, there is a demand for optimization of the structural characteristics of the thin film accordingly. The sputtering device has the advantage of stably obtaining a desired thin film depending on the material selected for the target. However, due to the structural characteristics of the sputtering equipment, the structural characteristics of the film may be different depending on the incidence angle of the sputtering target material to the substrate. In this study, the characteristics of the thin film material according to the scattering angle of the target material and the incidence position of the substrate were studied to find the optimization design rule of the sputtering equipment. To this end, a Si thin film of 1 ㎛ or less was deposited on the Si(100) substrate, and then the microstructure, reflectance, surface roughness, and thin film crystallinity of the thin film formed for each substrate location were investigated. As a result of the study, it was found that as the sputter scattering angle increased and the substrate incident angle decreased, the gap energy along with the surface structure of the thin film increased from 1.47 eV to 1.63 eV, gradually changing to a non-conductive tendency.

• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.498-504
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• 2006

The etch rates of photoresist (PR) and the etch selectivity of $SiO_2$ to PR in a high density $CHF_3$ plasma were investigated at different ion-incident angles and bias voltages. A Faraday cage was employed for the accurate control of ion-incident angles. The ion energy was controlled by changing bias voltages. The etch rate of $SiO_2$ continuously decreased with ion-incident angles but the etch rate of PR remained constant up to the middle angle region and decreased afterwards. The etch rates of $SiO_2$ normalized to those at $0^{\circ}$ incident angle changed with the ion-incident angle following a cosine(${\theta}$) curve. On the other hand, the normalized etch rates of the PR changed showing a drastic over-cosine shape in the middle angle region. The etch selectivity of $SiO_2$ to PR decreased with an increase in the ion-incident angle because the etch yields of PR were enhanced by physical sputtering in the middle angle region compared to the case of $SiO_2$ etching. The etch selectivity of $SiO_2$ to PR decreased with an increase in the bias voltage at nearly all ion-incident angles.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.761-763
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• 1998

In this paper, Co-Cr thin films which are known for a excellent perpendicular magnetic recording media were prepared. Changing target- substrate distance, Ar gas pressure and arriving atoms, the incident angle and c-axis orientation properties by using the facing targets sputtering system. We evaluated the c-axis dispersion angle by measu ring half-height width with Micro area X-Ray Diffractometer, measured the thickness of thin film with Ellipsometer. The magnetic properties were compared measuring in-plane squareness and perpendicular coercivity with vibrating sample Magnetometer.