• 한국자기학회:학술대회 개요집
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• 한국자기학회 1991년도 춘계연구발표회 논문개요집
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• pp.85-86
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• 1991

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2000년도 제32회 추계학술대회 정기총회
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• pp.406-413
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• 2000

The friction and wear behaviors of Magnetron Sputtered MoS$_2$films were investigated by using a pin on disk type tester which was designed and manufactured for this experiment. The experiment was conducted by using silicon nitride (Si$_3$N$_4$) as a pin material and Magnetron Sputtered MoS$_2$on bearing steel (STB2) as a disk material, under operating conditions that include different surface roughness (Polishing specimen, Grinding specimen)(2types), linear sliding velocities in the range of 22, 44, 66mm/sec (3types), normal loads vary from 9.8N, 19.6N, 29.4N(3types), corresponding to contact pressures of 1.9∼2.7GPa and atmospheric conditions of high vacuum( 1.3${\times}$10$\^$-4/Pa), medium vacuum( 1.3${\times}$10$\^$-l/Pa), ambient air(10$\^$5/Pa)(3types). We investigated fracture mechanism in magnetron sputtered MoS$_2$films with Magnetron Sputtering method in each experiment.

• 한국세라믹학회지
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• 제43권11호
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• pp.746-750
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• 2006

NiO films and Ru co-sputtered NiO films were deposited by reactive magnetron sputtering for micro-solid oxide fuel cell anode applications. The deposited films were reduced to form porous films. The reduction kinetics of the Ru doped NiO film was more sluggish than that of the NiO film, and the resulting microstructure of the former exhibited finer pore networks. The possibility of using the films for the anodes of single chamber micro-SOFCs was investigated using an air/fuel mixed environment. It was found that the abrupt increase in the resistance is suppressed in the Ru co-sputtered film, as compared to undoped film.

• 대한전자공학회논문지
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• 제24권4호
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• pp.625-630
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• 1987

Thermal evaporated SiO rf sputtered SiO2 thin films were most widely used to the gate oxide of TFTs. In this paper, the difference of trap density and distribution between SiO2 and SiO2 film were studied. TFTs using SiO and SiO2 thin film for the gate oxide were fabricated. The output characteirstics of TFTs and the time dpendencd of the leakage current were measured. Models of the carrier transport and carrier trapping in TFT were proposed. The trap density was obtained by substituting measured value for the equation derived from the proposed model. It was found that rf sputtered SiO2 had more traps at interface than thermal evaporated SiO.

• Journal of Korean Vacuum Science & Technology
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• 제4권4호
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• pp.97-101
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• 2000

In this study, two kinds of barium strontium titanate (BST) samples were prepared. One is a conventional BST film that is sputtered in a mixture of argon and oxygen. The other is a nitrogen-incorporated BST film that is sputtered in a mixture of oxygen and intentionally added nitrogen instead of argon gas. The structural properties of both of the BST films had not changed significantly with the species of sputtering gas. However, the leakage current of BST films sputtered at ($N_2$+O$_2$) atmosphere was lower than those sputtered at (Ar +O$_2$) atmosphere: 1.9$\times$10$^{-8}$ A/cm$^2$ at 2V for the films prepared at (Ar +O$_2$) atmosphere and 8.6$\times$10$^{-9}$ A/cm$^2$ for the films at ($N_2$+O$_2$) atmosphere. From an XPS analysis, it has been found that nitrogen atoms are incorporated in BST films with a concentration of 1.92 at% and form a certain oxynitride phase. It is proposed that nitrogen atoms are able to fill the oxygen vacancies of BST films during sputtering process, and then the leakage current reduces due to a decrease in the vacancies. The BST films sputtered at ($N_2$+O$_2$) atmosphere have superior electrical properties to the films sputtered at (Ar +O$_2$), without any significant structural changes.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.439-444
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• 2012

For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity of 99.999%. Plasma generators were generated by radio frequency (rf, 13.56 MHz) and direct current (dc) power. When Ge and Si targets were sputtered by dc and rf power, respectively, we could observe the growth of highly crystalline Ge thin film at the temperature of $400^{\circ}C$ from the result of raman spectroscopy and X-ray diffraction method. However, SiGe thin film did not deposit above method. Inversely, we changed target position like that Ge and Si targets were sputtered by rf and dc power, respectively. Although Ge crystalline growth without Si target sputtering deteriorated considerably, the growth of SiGe thin film was observed with increase of Si dc power. SiGe thin film was evaluated as microcrystalline phase which included (111) and (220) plane by X-ray diffraction method.

• 대한치과보철학회지
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• 제30권4호
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• pp.481-492
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• 1992

Author measured the bonding strength between Dental Porcelain and Nonprecious Dental Alloy and analyzed diffusion Phenomena at the interfaceby by Auger electron spectroscopy and also Electron spectroscopy for Chemical Analysis. The each specimen was sputtered with Al, Cr, In and Sn. 1. Ni whic is the main element of the matris of dental nonprecious alloy diffuse more than the other element and the Ni diffusion rate of each specimen was well coordinated with the bonding strength of each. 2. The Sn thin film suppress the diffusion rate of Ni of matrix into the Dental Porcelain than the In or Cr thin films. 3. The Al thin film suppress the diffusion rate of Ni than the Sn thin film. 4. The main coponent of dental porcelain : Al, Si, Mo diffused into the matrix of alloy. It means that the each element of dental alloy and dental porelain diffused into the each other part.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.116-119
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• 2000

The a-axis and c-axis prefer oriented SBT thin films could be deposited on Pt(111)/Ti/$SiO_2$$650^{\circ}C$). The c-axis preferred orientation of SBT film can be obtained by Sr deficiency and high compressive stress. However, the a-axis-oriented grains can be formed under stoichiometric Sr content and nearly stress-free state.

• 한국수소및신에너지학회논문집
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• 제22권3호
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• pp.319-325
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• 2011

The electrical properties of sputtered GDC thin films on $Al_2O_3$ substrates was studied. The electrical properties of the films were measured to evaluate the ion conductivity of GDC thin films for co-planar SOFC electrolytes. The impedance of the GDC thin films on $Al_2O_3$ substrates was affected by the film thickness and the impedance of thin film exhibited higher value than thick films. Similarly, the conductivity of the thick film showed much higher value than thin films. It indicated that the film thickness is the main factor affecting the conductivity and impedance of the GDC electrolyte for the co-planar SOFC.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.184-184
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• 2000