• 한국표면공학회지
• /
• 제45권2호
• /
• pp.75-80
• /
• 2012

A sputter-sublimation source was tested for high rate deposition of protective coating of PEMFC(polymer electrolyte membrane fuel cell) with high electrical conductivity and anti-corrosion capability by DC biasing of a metal rod immersed in inductively coupled plasma. A SUS(stainless steel) tube, rod were tested for low thermal conductivity materials and copper for high thermal conductivity ones. At 10 mTorr of Ar ICP(inductively coupled plasma) with 2.4 MHz, 300 W, the surface temperature of a SUS rod reached to $1,289^{\circ}C$ with a dc bias of 150 W (-706 V, 0.21 A) in 2 mins. For 10 min of sputter-sublimation, 0.1 gr of SUS rod was sputter-sublimated which is a good evidence of a high rate deposition source. ICP is used for sputter-sublimation of a target material, for substrate pre-treatment, film quality improvement by high energy particle bombardment and reactive deposition.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.5-18
• /
• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.64-64
• /
• 2008

연속공정이 가능한 Roll to Roll sputter system을 이용하여 플렉시블 indium tin oxide(ITO) 투명전극을 PET(polyethlyene terephthalate) 기판위에 성막하였다. 연속 성막공정을 위해 Roll to Roll sputter system에서의 unwinder roller와 rewinder roller를 이용한 servomotor의 rolling으로 기판의 움직임이 완벽히 제어되었으며, 외부 응력으로 부터의 안정성 및 성막 공정 시의 PET 기판의 열적 변형을 최소화하기 위한 접촉식 냉각방식의 cooling system을 main drum으로 사용하였다. 또한 고분자 기판과 투명전극 사이의 adhesion을 향상시키기 위한 전처리 공정으로 gridless linear ion beam source를 pretreatment system으로 구축하였다. 이렇게 제작된 Roll to Roll sputter system을 이용하여 PET 기판위에 연속공정을 통해 ITO 투명전극을 성막하였다. 성막된 플렉시블 ITO/PET 투명전극은 XRD, HREM, SEM 분석을 통하여 main drum의 cooling에 의해 완전한 비정질 구조를 나타내었음을 확인할 수 있었으며, 비록 Roll to Roll sputter system을 통하여 상온에서 성막 되었음에도 불구하고 최적화 된 조건에서 가시광선 영역 83.46 %의 높은 광투과도 값과 47.4 Ohm/square의 비교적 낮은 먼저항 값을 얻을 수 있었다. 또한 Bending test 결과를 통하여 ion source의 전처리 공정으로 굽힘/평의 반복적 응력에 따른 전기적 특성 열화를 최소화 할 수 있음을 보였다. 최적화된 플렉시블 투명전극을 이용하여 P3HT:PCBM 기반의 플렉시블 유기태양전지를 제작하였으며, 제작된 유기태양전지로부터 1.88%의 power conversion efficiency (PCE)을 확보함으로써 플렉시블 유기태양전지 제작을 위한 ITO/PET 투명전극 성막 공법으로써 Roll to Roll sputter system의 적용가능성을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
• /
• pp.73-73
• /
• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

• 한국생산제조학회지
• /
• 제24권4호
• /
• pp.400-406
• /
• 2015

This study researched the structure of the source of an ion milling machine used to fabricate a scanning electron microscope (SEM) sample. An ion source is used to mill out samples of over 1 mm dimension using a broad ion beam to generate plasma between the anode and cathode using a permanent magnet. To mill the sample in the vacuum chamber, the ion source should be greater than 6 kV for a positive ion current over $200{\mu}A$. To discover the optimum operating conditions for the ion miller, the diameter of the extractor, anode shape, and strength of the permanent magnet were varied in the experiments. A silicon wafer was used as the sample. The sputter yield was measured on the milled surface, which was analyzed using the SEM. The wafer was milled by injecting 1 sccm of argon gas into the 0.5 mTorr vacuum chamber.

• 반도체디스플레이기술학회지
• /
• 제11권2호
• /
• pp.1-6
• /
• 2012

In this study, a high performance rotary magnet type magnetron source for roll-to-roll sputter system has been developed. We analyzed the density of magnetic field as a function of size variation of the magnet which are in the center and edge of the target. The target efficiency showed the best result when the width of center magnet, the width of edge magnet, the angle of edge magnet, and the rotation angle of Yoke are 20mm, 10mm, $56^{\circ}$, and $16^{\circ}$, respectively. On the basis of the results of magnet array, Roll-to Roll magnetron source was fabricated and tested. The uniformity of the film thickness and that of the sheet resistance was ${\pm}1.62%$ and ${\pm}4.13%$, and the resistivity was $2.79{\times}10^{-3}W{\cdot}cm$.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
• /
• pp.228-230
• /
• 1994

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.160-163
• /
• 2002

Silica waveguide for an integrated diffractive optical head system was designed and fabricated. The waveguide was designed to optimize the optical efficiency of red and/or blue laser source, and a lab-made RF magnetron sputter was adopted to deposit silica cladding and core layers on SiO$_2$/Si substrates. The cladding and core layers were formed using commercial targets, and the former was done with ＃7740 and the latter with BK7 and BAK4, respectively The surface roughness of the waveguide layers was measured to be 30.3${\AA}$ for BK7 and 17.8${\AA}$ for BAK4, and the difference of refractive indices between core and cladding layers was 0.9% and 2.5%, respectively. The waveguide fabricated with the core layer of BK7 showed better optical properties when the final diffractive optical probe heads were measured with red laser(650nm) source.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.154.1-154.1
• /
• 2014

Indium gallium zinc oxide (IGZO)는 차세대 디스플레이 평판 패널에 사용되는 반도체 화합물의 일종으로 최근 주목받고 있는 물질의 하나이다. 기존의 IGZO를 사용하여 박막을 증착한 뒤 표면 처리를 통해 박막의 특성 변화에 대한 연구들이 진행되어 왔으며, 기존의 연구들은 plasma 환경에 노출을 시켜 간접적인 plasma treatment를 통해 박막의 특성을 향상시켜 왔다. 본 연구에서는 기존의 plasma treatment에서 발견된 방식인 ion beam treatment를 통해 플라즈마를 직접적으로 표면에 조사하여 박막의 특성 변화를 알아보았다. 한국표준과학연구원에서 자체 제작한 chamber를 이용하여 RF sputter로 Si wafer 위에 IGZO 박막을 증착하고 수소 ion beam treatment를 한 뒤, SEM과 XPS를 사용하여 박막 표면의 물성 변화를 분석하였다. 실험에 사용된 chamber에는 sputter gun과 ion beam이 함께 장착되어 있으며, scroll pump와 TMP를 사용하여 pressure를 유지하였다. 실험 시 base pressure는 $1.4{\times}10^{-6}Torr$였다. RF power 150 W. ion beam power 2,000 V에서 실험을 진행하였다.

• Applied Science and Convergence Technology
• /
• 제23권4호
• /
• pp.179-186
• /
• 2014

Fluid model based numerical simulation was carried out for an inductively coupled plasma assisted sputter deposition system. Power absorption, electron temperature and density distribution was modeled with drift diffusion approximation. Effect of an electrically conducting substrate was analyzed and showed confined plasma below the substrate. Part of the plasma was leaked around the substrate edge. Comparison between the quasi-neutrality based compact model and Poisson equation resolved model showed more broadened profile in inductively coupled plasma power absorption than quasi-neutrality case, but very similar Ar ion number density profile. Electric potential was calculated to be in the range of 50 V between a Cr rod source and a conductive substrate. A new model including Cr sputtering by Ar+was developed and used in simulating Cr deposition process. Cr was modeled to be ionized by direct electron impact and showed narrower distribution than Ar ions.