• Title/Summary/Keyword: Spurious Signal

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A Study on an Efficient VDES Gain Control Method Conforming to the International Standard (국제 표준 규격에 부합하는 효율적인 VDES 이득제어 방안 연구)

  • Yong-Duk Kim;Min-Young Hwang;Won-Yong Kim;Jeong-Hyun Kim;Jin-Ho Yoo
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2022.06a
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    • pp.339-343
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    • 2022
  • In this study, a method for simplifying the structure of the VDES RF receiver, and the gain control method of the receiver to comply with the international standard in this structure was described. The input level of the wanted signal and unwanted signal to the receiver was defined, and when the two signals were input, the saturation state at the ADC was checked at the receiver output. As a result of the simulation by the circuit simulator, it was satisfied that the output power of the receiver was in the SFDR region of ADC with respect to the adjacent channel interference ratio, intermodulation, and blocking level. Through this study, it was found that the structure of th proposed RF receiver conforms to the international standard.

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A Low-pass filter design for suppressing the harmonics of 2.4GHz RFID tag (2.4GHz RFID 태그용 고조파 억제를 위한 저역통과필터의 설계)

  • Cho, Young Bin;Kim, Byung-Soo;Kim, Jang-Kwon
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.39 no.3
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    • pp.59-64
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    • 2002
  • In the RFID system using ISM-band, The tag mounted at the object has used the DC power by rectifying the RF signals of the small antenna for operating the micro-controller and memory. The performance of the tag would be reduced because of the second harmonics generated by the nonlinearity of the semiconductor and the spurious signal excited the high order mode of the antenna. This paper has realized the novel type low-pass filter with "the Stub-I type DGS slot structure" to improve the efficiency of the tag by suppressing the harmonics. The optimized frequency character at the pass-band/stop-band has obtained by tuning the stub width and slit width of I type slot. The measured result of the LPF has the cutoff frequency 3.25 GHz, the insertion loss about -0.29~-0.3 dB at pass-band 2.4 GHz~2.5 GHz, the return loss about -27.688~-33.665 dB at pass-band with a good performance, and the suppression character is about -19.367 dB at second harmonics frequency 4.9 GHz. This DGS LPF may be applied the various application as the RFID, WLAN to improve the efficiency of the system by suppressing the harmonics and spurious signals. 

Nonlinearity Compensation of Electroabsorption Modulator by using Semiconductor Optical Amplifier (반도체 광증폭기를 이용한 전계흡수 광변조기 비선형성 보상)

  • Lee, Chang-Hyeon;Son, Seong-Il;Han, Sang-Guk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.5
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    • pp.23-30
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    • 2000
  • To compensate the nonlinearity of electroabsorption modulator(EAM) resulting from its near exponential transfer function, a semiconductor optical amplifier(SOA) that has a log transfer function is used. Since the transfer function of SOA is inverse to that of EAM, the intermodulation distortion(IMD) of EAM can be reduced by cascading SOA to EAM. Also, the RF gain can be increased by the optical gain of SOA. For these reasons, spurious free dynamic range(SFDR) of EAM is enhanced by connecting SOA to EAM in series and operating in gain salutation region. To improve the nonlinearity compensation of EAM, the increased gain of SOA is required and the slope of gain saturation, the ratio of gain to input SOA power, needs to be steep. However, signal spontaneous beat noise that is the dominant system noise increases in proportion to the gain such that the SFDR of EAM is reduced. The higher the gain of SOA is, the more ASE is increased. Thus the noise level of system is increased and the following SFDR of EAM is decreased. The slope of gain saturation region and ASE of have trade-off relation and the optimization is achieved at 8㏈ optical gain. 9㏈ enhancement of SFDR of EAM is obtained. This scheme is easy to embody the linear EAM and the integration with three components (DFB-LD, EAM and SOA) offers many merits, such as low insertion loss, low chirping and low polarization sensitivity.

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A Study on the Phase-looked Dielectric Resonator Oscillator using Bias Tuning (바이어스 동조를 이용한 위상 고정 유전체 공진 발진기에 관한 연구)

  • 류근관;이두한;홍의석
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.10
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    • pp.1982-1990
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    • 1994
  • We implemented a PLDRO(Phase Locked Dielectric Resonator Oscillator) using the concept of the feedback property of PLL(Phase Locked Loop) for Ku-band(10.95-11.70 GHz). The conventional approaches to a PLDRO design use varactor diode tuning method.. But in theis paper, the PLDRO has the advantage of the frequency sensitivity to changes in the supple voltage of the oscillating device without the frequency-variable part by varactor diode voltage-control. and uses a SPD(Sampling Phase Detector) for phase-comparision. The PLDRO is composed of the DRO phase-locked to the reference signal of UHF band by using a SPD for high frequency stability and can be available for European FSS(Fixed Satellite Service) at 10.00GHz. The PLDRO generates the output power of 8.67 dBm at 10.00 GHz and has a phase noise of -81 dBc/Hz at 10 kHz offset from carrier. The hamonic and spurious characteristics have -42.33 dBc and -65dBc respectively. This PLDRO has much better frequency stability, lower phase noise, and more economical effect for a satellite system than conventional DRO.

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W-Band MMIC chipset in 0.1-㎛ mHEMT technology

  • Lee, Jong-Min;Chang, Woo-Jin;Kang, Dong Min;Min, Byoung-Gue;Yoon, Hyung Sup;Chang, Sung-Jae;Jung, Hyun-Wook;Kim, Wansik;Jung, Jooyong;Kim, Jongpil;Seo, Mihui;Kim, Sosu
    • ETRI Journal
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    • v.42 no.4
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    • pp.549-561
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    • 2020
  • We developed a 0.1-㎛ metamorphic high electron mobility transistor and fabricated a W-band monolithic microwave integrated circuit chipset with our in-house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz-108 GHz band and achieved excellent spurious suppression. A low-noise amplifier (LNA) with a four-stage single-ended architecture using a common-source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W-band image-rejection mixer (IRM) with an external off-chip coupler was also designed. The IRM provided a conversion gain of 13 dB-17 dB for RF frequencies of 80 GHz-110 GHz and image-rejection ratios of 17 dB-19 dB for RF frequencies of 93 GHz-100 GHz.

Front-End Module of 18-40 GHz Ultra-Wideband Receiver for Electronic Warfare System

  • Jeon, Yuseok;Bang, Sungil
    • Journal of electromagnetic engineering and science
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    • v.18 no.3
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    • pp.188-198
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    • 2018
  • In this study, we propose an approach for the design and satisfy the requirements of the fabrication of a small, lightweight, reliable, and stable ultra-wideband receiver for millimeter-wave bands and the contents of the approach. In this paper, we designed and fabricated a stable receiver with having low noise figure, flat gain characteristics, and low noise characteristics, suitable for millimeter-wave bands. The method uses the chip-and-wire process for the assembly and operation of a bare MMIC device. In order to compensate for the mismatch between the components used in the receiver, an amplifier, mixer, multiplier, and filter suitable for wideband frequency characteristics were designed and applied to the receiver. To improve the low frequency and narrow bandwidth of existing products, mathematical modeling of the wideband receiver was performed and based on this spurious signals generated from complex local oscillation signals were designed so as not to affect the RF path. In the ultra-wideband receiver, the gain was between 22.2 dB and 28.5 dB at Band A (input frequency, 18-26 GHz) with a flatness of approximately 6.3 dB, while the gain was between 21.9 dB and 26.0 dB at Band B (input frequency, 26-40 GHz) with a flatness of approximately 4.1 dB. The measured value of the noise figure at Band A was 7.92 dB and the maximum value of noise figure, measured at Band B was 8.58 dB. The leakage signal of the local oscillator (LO) was -97.3 dBm and -90 dBm at the 33 GHz and 44 GHz path, respectively. Measurement was made at the 15 GHz IF output of band A (LO, 33 GHz) and the suppression characteristic obtained through the measurement was approximately 30 dBc.

Experimental Evidence and Analysis of a Mode Conversion of Guided Wave Using Magnetostrictive Strip Transducer (자기변형 스트립 탐촉자에 의한 유도초음파 모드 변환에 대한 실험적 검증 및 해석)

  • Cheong, Yong-Moo
    • Journal of the Korean Society for Nondestructive Testing
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    • v.29 no.2
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    • pp.93-97
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    • 2009
  • An advantage of a magnetostrictive strip transducer for a long-range guided wave inspection is that the wave patterns are relatively clear and simple when compared to a conventional piezoelectric ultrasonic transducer. Therefore, if we can characterize the evolution of defect signals, it could be a promising tool for a structural health monitoring of pipes for a long period of time as well as an identification of flaws. However, when evaluating a signal during a realistic field examination, it should be careful because of some spurious signals or false indications, such as signals due to a directionality, multiple reflections, mode conversion, geometrical reflections etc. Mode converted signals from a realistic piping mockup were acquired and analysed. We found mode conversions between a torsional guided wave T(0,1) mode and a flexural F(1,3) or longitudinal L(0,2) mode generated by a magnetostrictive strip transducer. Based on the experimental observations, an interpretation of the source of the mode conversion is discussed in a viewpoint of electromagnetic properties and structure of the strip transducer.

A Study on Implementation and Performance Evaluation of Wideband Receiver for the INMARSAT-B Satellite Communications System (INMARSAT-B형 위성통신용 광대역 수신단 구현 및 성능평가에 관한 연구)

  • 전중성;임종근;김동일;김기문
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.1
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    • pp.166-172
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    • 2001
  • A RF wideband receiver for INMARSAT-B satellite communications system was composed of low noise amplifier and high gain amplifier, The low noise amplifier used to the resistive decoupling circuit for input impedance matching and self-bias circuits for low noise. The high gain amplifier consists of matched amplifier type to improve receiver gain. The active bias circuit can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilization resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 60 dB in gain and less than 1.8:1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio which is input signal level -126.7 dB m at 1537.5 MHz is a 45.23 dB /Hz at a 1.02 kHz.

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A 4×32-Channel Neural Recording System for Deep Brain Stimulation Systems

  • Kim, Susie;Na, Seung-In;Yang, Youngtae;Kim, Hyunjong;Kim, Taehoon;Cho, Jun Soo;Kim, Jinhyung;Chang, Jin Woo;Kim, Suhwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.129-140
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    • 2017
  • In this paper, a $4{\times}32$-channel neural recording system capable of acquiring neural signals is introduced. Four 32-channel neural recording ICs, complex programmable logic devices (CPLDs), a micro controller unit (MCU) with USB interface, and a PC are used. Each neural recording IC, implemented in $0.18{\mu}m$ CMOS technology, includes 32 channels of analog front-ends (AFEs), a 32-to-1 analog multiplexer, and an analog-to-digital converter (ADC). The mid-band gain of the AFE is adjustable in four steps, and have a tunable bandwidth. The AFE has a mid-band gain of 54.5 dB to 65.7 dB and a bandwidth of 35.3 Hz to 5.8 kHz. The high-pass cutoff frequency of the AFE varies from 18.6 Hz to 154.7 Hz. The input-referred noise (IRN) of the AFE is $10.2{\mu}V_{rms}$. A high-resolution, low-power ADC with a high conversion speed achieves a signal-to-noise and distortion ratio (SNDR) of 50.63 dB and a spurious-free dynamic range (SFDR) of 63.88 dB, at a sampling-rate of 2.5 MS/s. The effectiveness of our neural recording system is validated in in-vivo recording of the primary somatosensory cortex of a rat.

Interference Analysis based on System Level Simulation in LTE Networks (LTE 네트워크에서 시스템 레벨 시뮬레이션 기반 인접 대역간 간섭 분석)

  • Ban, Tae Won;Jung, Bang Chul
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.11
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    • pp.2411-2417
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    • 2012
  • Globally, the emergence of smart phones vitalized the ecosystem of mobile data service industry. Consequentially, mobile data traffic has been explosively growing and the speed of growth will be more steep. New spectrum will be required in order to properly accommodate the explosively growing mobile data traffic. However, it will be difficult to acquire a sufficient guard band between different frequency bands because the range of frequency which is suitable for wireless communications is limited. Thus, the performance degradation caused by inter-band interference will be one of challenging problems in the next generation mobile communication systems. In this paper, we analyze the performance degradation caused by inter-band interference by computer simulations in various environments. Our results show that the impact of the inter-band interference is more critical when own signal is poor or its own interference from neighboring cells is low.