• Title/Summary/Keyword: Spot position and width

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Characteristics of Surface Hardening of Dies Steel for Plastic Molding using Continuous Wave Md:YAG Laser (연속파형 Nd:YAG 레이저를 이용한 플라스틱성형용 금형강의 표면경화 특성)

  • Shin, Ho-Jun;Yoo, Young-Tae;Oh, Yong-Seak
    • Journal of the Korean Society for Precision Engineering
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    • v.26 no.1
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    • pp.71-81
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    • 2009
  • Die steel for plastic molding were used as mold material of automobile parts and electronic component industry. The material of this paper has superior to mechanical properties, such as repair weldability, corrosion resistance and high temperature strength, required mold parts for semitransparent. Laser-induced surface hardening technology is widely adopted to improver fatigue life and wear resistance via localized hardening at the surface of mold parts. The objective of this research work is to investigate on the characteristics of surface hardening of the laser process parameters, such as beam travel speed, laser power and defocsued spot position, for the case of die steel for plastic molding. Lens for surface hardening of large area is plano-convex type with elliptical profile to maintain uniform laser irradiation. According to the experimental results, large size of hardened layer at the surface of die steel for plastic molding was achieved, and microstructure of this layer was lath martensite. Optimal surface status and mechanical property of hardened layer could be obtained at 1095Watt, $0.25{\sim}0.3m/min$, 0mm (focal length: 232mm) for laser power, beam travel speed, and focal position. Where, heat input was $0.793{\times}10^{3}J/cm^2$, and width of hardened layer was 27.58mm.

Hierarchical Clustering Approach of Multisensor Data Fusion: Application of SAR and SPOT-7 Data on Korean Peninsula

  • Lee, Sang-Hoon;Hong, Hyun-Gi
    • Proceedings of the KSRS Conference
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    • 2002.10a
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    • pp.65-65
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    • 2002
  • In remote sensing, images are acquired over the same area by sensors of different spectral ranges (from the visible to the microwave) and/or with different number, position, and width of spectral bands. These images are generally partially redundant, as they represent the same scene, and partially complementary. For many applications of image classification, the information provided by a single sensor is often incomplete or imprecise resulting in misclassification. Fusion with redundant data can draw more consistent inferences for the interpretation of the scene, and can then improve classification accuracy. The common approach to the classification of multisensor data as a data fusion scheme at pixel level is to concatenate the data into one vector as if they were measurements from a single sensor. The multiband data acquired by a single multispectral sensor or by two or more different sensors are not completely independent, and a certain degree of informative overlap may exist between the observation spaces of the different bands. This dependence may make the data less informative and should be properly modeled in the analysis so that its effect can be eliminated. For modeling and eliminating the effect of such dependence, this study employs a strategy using self and conditional information variation measures. The self information variation reflects the self certainty of the individual bands, while the conditional information variation reflects the degree of dependence of the different bands. One data set might be very less reliable than others in the analysis and even exacerbate the classification results. The unreliable data set should be excluded in the analysis. To account for this, the self information variation is utilized to measure the degrees of reliability. The team of positively dependent bands can gather more information jointly than the team of independent ones. But, when bands are negatively dependent, the combined analysis of these bands may give worse information. Using the conditional information variation measure, the multiband data are split into two or more subsets according the dependence between the bands. Each subsets are classified separately, and a data fusion scheme at decision level is applied to integrate the individual classification results. In this study. a two-level algorithm using hierarchical clustering procedure is used for unsupervised image classification. Hierarchical clustering algorithm is based on similarity measures between all pairs of candidates being considered for merging. In the first level, the image is partitioned as any number of regions which are sets of spatially contiguous pixels so that no union of adjacent regions is statistically uniform. The regions resulted from the low level are clustered into a parsimonious number of groups according to their statistical characteristics. The algorithm has been applied to satellite multispectral data and airbone SAR data.

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Plasma-Assisted Molecular Beam Epitaxy of InXGa1-XN Films on C-plane Sapphire Substrates (플라즈마분자선에피탁시법을 이용한 C-면 사파이어 기판 위질화인듐갈륨박막의 에피탁시 성장)

  • Shin, Eun-Jung;Lim, Dong-Seok;Lim, Se-Hwan;Han, Seok-Kyu;Lee, Hyo-Sung;Hong, Soon-Ku;Joeng, Myoung-Ho;Lee, Jeong-Yong;Yao, Takafumi
    • Korean Journal of Materials Research
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    • v.22 no.4
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    • pp.185-189
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    • 2012
  • We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.