• ETRI Journal
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• v.21 no.4
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• pp.65-82
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• 1999

We present a calculation model for an improved quantitative theoretical analysis of electronic and optical properties of strained-piezoelectric[111] InGaAs/GaAs superlattices (SLs). The model includes a full band-coupling between the four important energy bands: conduction, heavy, light, and spin split-off valence bands. The interactions between these and higher lying bands are treated by the k ${\cdot}$ p perturbation method. The model takes into account the differences in the band and strain parameters of constituent materials of the heterostructures by transforming it into an SL potential in the larger band-gap material region. It self-consistently solves an $8{\times}8$ effective-mass $Schr{\ddot{o}}dinger$ equation and the Hartree and exchange-correlation potential equations through the variational procedure proposed recently by the present first author and applied to calculate optical matrix elements and spontaneous emission rates. The model can be used to further elucidate the recent theoretical results and experimental observations of interesting properties of this type of quantum well and SL structures, including screening of piezoelectric field and its resultant optical nonlinearities for use in optoelectronic devices.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.97-101
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• 1999

We propose and demonstrate a novel sensor which can simultaneously measure strain and temperature. The sensor is composed of a single fiber Bragg grating and an erbium-doped fiber amplifier. Using linear variation in the amplified spontaneous emission power of an erbium-doped fiber amplifier with temperature, we determine the temperature. By subtracting the temperature effect from the Bragg wavelength shift, we determine the strain. Experiments show rms deviations of $18.2{\mu}{\varepsilon}$ and $0.7^{\circ}C$ for strain and temperature, respectively.

• Korean Journal of Optics and Photonics
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• v.5 no.2
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• pp.326-332
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• 1994

Performance of soliton based long-haul optical communication system with in-line optical amplifier repeaters are evaluated numerically. To reduce the optical amplifier noise, the amplifier gain is increased and the post amplifier loss is included. By theoretical calculation with 1480 nm co propagating pump, 7 dB amplifier gain and operating the amplifier 1 dB in compression, the spontaneous emission factor can be reduced from 2.37 to 1.45 by increasing the pump power from 3.71 to 11.53 mW and increasing the post amplifier loss from 0 to 10 dB. Then, power penalty can be reduced from 4.09 to 1.20 dB for 8,000'km transmission and the maximum transmission distance is 14,890 km. ,890 km.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.5A
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• pp.484-491
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• 2004

C-band pumping effect appears in L-band EDFA because the absorption in C-band occurs dominant under the condition of such a low average population inversion. In this paper, we show how the C-band pumping effect depends on 980nm pump power, the C-band wavelength, and its input power. The C-band pumping is caused by absorbing C-band injection or backward spontaneous emission power through EDF. If the same small signal condition is given by a C-band pump, the C-band pump of a long wavelength is good for the saturation and noise characteristics of L-band signal. Finally, it is considered that in the aspect of saturation characteristics, C-band compensation is not so much efficient as L-band in Gain-Clamped L-band EDFA having a lossy resonator.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.489-492
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• 2007

Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the $In_{0.27}Ga_{0.73}N/GaN$ multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.

• ETRI Journal
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• v.38 no.1
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• pp.1-8
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• 2016

A large incoherent crosstalk (IC) caused by amplified spontaneous emission (ASE) noise power from Tx-disabled optical network units and a differential path loss has been shown to degrade upstream transmission performance in time-division multiplexing passive optical networks. This paper considers the IC-induced power penalty of an upstream signal both in an XG-PON and in a TWDM-PON. We investigate the degradation of the extinction ratio and relative intensity noise through a simulation and experiments. For the XG-PON case, we observe a 9.6 dB difference in the level of ASE noise power from Tx-disabled ONUs (hereafter known simply as ASE noise) between our result and the ITU-T XG-PON PMD recommendation. We propose an optical filtering method to mitigate an IC-induced power penalty. In the TWDM-PON case, the IC-induced power penalty is naturally negligible because the ASE noise is filtered by a wavelength multiplexer at the optical line terminal. The results provide design guidelines for the level of ASE noise in both XG-PONs and TWDM-PONs.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.146-149
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• 2003

Nanosecond pulses are efficiently amplified by a two-stage EDFA. The EDFA employs an optical bandpass filter between stages to remove the amplified spontaneous emission of the first EDFA that strongly saturates the gain of the second EDFA. The peak power of the amplified output pulse is 83 W when that of the input pulse of 10 ㎱width and 100 $mutextrm{s}$ period is 1 ㎽.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.340-346
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• 2000

Traveling wave type semiconductor optical amplifiers integrated with spot-size-converter (SSC-TW-SOA) have been extensively studied for the improvement of coupling effiClency With single-mode fiber and fO! the cost reducClon 111 a packaging In tlIis paper the slructural dependence of the spot-slZe-converter on the effective facet reflectlvllY $R_{eff}$ was experimentally as well as thcoretienlly mvestlgated. It was shown that not only a sufficient mode-conversion in a sse region along the latersl and tran~verse directions but also an introductIOn of angled-facet were very essential in order to reduce $R_{eff}$ Very small ripple less than 0.1 dB in an amplified spontaneous emission spectrum was observed with the fabncated SSC-lW-SOA which consists of the wrndow length of $20\mu\textrm{m}$, facet angle of $7^{\circ}$, and antlrelleetioll-coated facet of ] % reflectivity.tivity.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.2037-2042
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• 2014

Three methods for gain saturation tone application were compared for optical wavelength division multiplexing transmission using more than 32 channels. The methods are to use high power distributed feedback laser diodes, to use amplified light sources, and lastly to use one saturation tone and several WDM light sources. 1532.3 nm, 1545.7 nm, and 1558.2 nm for the wavelength dependency of the saturation tone were also compared. As a result, the effect of amplified spontaneous emission noise caused by an amplifier was very slight. long wavelength for a saturation tone caused 1 dB gain reduction and its reason was analyzed.

• Current Optics and Photonics
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• v.4 no.6
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• pp.472-476
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• 2020

We have investigated the impact of optical filter bandwidth on the performance of all-optical automatic gain-controlled (AGC) erbium-doped fiber amplifiers (EDFAs). In principle, an optical bandpass filter (OBPF) should be placed within the feedback gain-clamping loop to set the lasing wavelength as well as the passband of the feedback amplified spontaneous emission (ASE) in all-optical AGC EDFA. From our measurement results, we found that the power level of feedback ASE with 0.1 nm passband of the optical filter was smaller than the ones with >0.2 nm passband cases. Therefore, the peak-to-peak power variation of the surviving channel with 0.1 nm passband was much larger than the ones with >0.2 nm passband. In addition, no significant difference in the power level of the feedback ASE was observed when the passband of the optical filter was ranging from 0.2 nm to 4.5 nm in our measurements. From these results, we have concluded that the passband of the optical filter should be slightly larger than 0.2 nm by taking into account the effect of feedback ASE power and the efficient use of the EDFA gain spectrum for the lasing ASE peak.