• Journal of information and communication convergence engineering
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• v.4 no.2
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• pp.88-91
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• 2006

In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the S11-parameter of the inductor.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.255-258
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• 2006

In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the $S_{11}-parameter$ of the inductor.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.461-464
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• 1999

Planar type thin film inductors have a potential for the application of miniaturized DC-DC converters. For those high current applications, the magnetic film with high current capability is required. The current capability of magnetic films is mainly determined from high saturation magnetization (4$\piM_s$) as well as large anisotropy field $(H_k)$. We fabricated a double rectangular spiral thin film inductor which consist of magnetic layer, coil and insulator. Highest inductance values as well as best frequency characteristics can be obtained from 5 MHz and quality factor exhibit about 7.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.9
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• pp.4101-4106
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• 2011

In this study, we propose that the structures of 2-layer spiral planar inductors have a lower spiral coil and via increasing inductance in limited possession are and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The 2-layer spiral planar inductors have inductance of 3.2nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 8.2 at 2.5 GHz, SRF of 5.8 GHz. Otherwise, 1-layer spiral planar inductors have inductance of 1.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18 at 8 GHz, SRF of 19.2 GHz.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.4
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• pp.2330-2334
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• 2014

In this study, we confirmed the frequency characteristics of planar spiral inductor based on non-contact method AC coupling for wireless signal transmission. The dielectric constant variation of the substrate does not directly effect the inductance of device but effect the electrostatic capacity of device. Therefore, its change self-resonance frequency. The thickness increment of the substrate increase inductance but decrease self-resonance frequency. Because, the thickness decrement of the substrate make the inside electrostatic capacity increment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.257-262
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• 2008

In this paper, the key parameters of $CO_2$ laser(focus depth, air blow rate, total laser beam time, number of pulse) are experimented for thru-hole and scribing line on AIN(aluminum nitride) substrate with high thermal conductivity. And, microstrip line & spiral planar inductor are fabricated on AIN substrate using 5 um Cu-plating with self-masking technique. The microstrip line of AIN has 0.1 dB/mm attenuation at 10 GHz and 6 nH spiral planar inductor has 56 maximum quality factor at 1 GHz. Thus, the AIN substrate is promising for GHz applications of high power area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.826-831
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• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• Proceedings of the KIPE Conference
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• 2017.11a
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• pp.135-136
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• 2017

In this paper, a spiral inductor is designed and its inductance is calculated by the expended Grover method. To verify this, a rectangular planar inductor is printed by inkjet printer using conductive ink and the calculated inductance value is compared with its measured value.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.74-74
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• 1998

• Journal of Magnetics
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• v.6 no.2
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• pp.73-76
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• 2001

A double rectangular spiral type inductor has been fabricated by using FeTaN films. The inductor is composed of internal coils sandwiched by magnetic layers. Characteristics of inductor performance are investigated with an emphasis on planarization of magnetic films. In the absence of the planarization process, the grating topology of the upper magnetic films over the coil arrays degrades the soft magnetic properties and the inductor performance. It also induces a longitudinal magnetic anisotropy with the easy axis aligned to the magnetic flux direction. This alignment prevents the upper magnetic films from contributing to the total induction. Glass bonding is a viable method for achieving a completely planar inductor structure. The planar inductor with glass bonding shows excellent performance: inductance of 1.1 $\mu H$, Q factor of 7 (at 5 MHz), and the current capability up to 100 mA.