• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.370-370
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• 2007

The liquid crystal (LC) aligning capabilities treated on the Organic overcoat thin film surfaces by ion beam irradiation and rubbing method was successfully studied for the first time. The Organic overcoat layer was coated by spin-coating. In order to characterize the LC alignment, the microscope, pretilt angle, thermal stress, and atomic force microscopy (AFM) image was used. The good LC aligning capabilities treated on the Organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. But, the alignment of defect of NLC on the Organicovercoat surface at low energy density of 600 eV was measured. The pretilt angle of NLC on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min at energy density of 1800eV was measured about 1.13 degree. But, low pretilt angles of NLC on the Organic overcoat thin film surface with ion beam exposure at energy density of 600, 1200, 2400, and 3000 eV was measured. Also, the pretilt angle of NLC on the rubbed Organic overcoat thin film surfaces was measured about 0.04 degrees. Finally, the good thermal stability of LC alignment on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be measured.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1313-1314
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• 2007

This paper presents organic thin-film transistors (OTFTs) with poly(3-hexylthiophene)(P3HT) semiconductor and several polymeric dielectric materials of poly(vinyl phenol)(PVP), poly(vinyl alcohol)(PVA), and polyimide(PI) by using soluble process. The fabricated OTFT's have inverted staggered structure using transmission line method(TLM) pattern. In order to evaluate the electrical characteristics of the OTFT, capacitance-voltage(C-V) and current-voltage(I-V) were measured. C-V graphs were measured at several frequencies of 100 Hz, 1 kHz, and 1 MHz and ID-VDS graphs according to $V_{GS}$. The current on/off ratio and threshold voltage with each of PVP, PVA, and PI based OTFTs were measured to $10^3$, and -0.36, -0.41, and -0.62 V. Also, the calculated mobility with each of PVP, PVA, and PI was 0.097, 0.095, and 0.028 $cm^{2}V^{-1}s^{-1}$, respectively. In the cases of PVP and PVA, the hole mobility of P3HT was in excellent agreement with the published value of 0.1 $cm^{2}V^{-1}s^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.396-399
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• 2003

In this paper, the purpose is to develop imaging technique of synchrotron radiation using CMOS image sensor. The detector using hybrid method to be research in this lab was used, in order to increase image signal. We made experiments with 1B2 Whitebeam/microprobe beamline in PAL (Pohang Accelerator Laboratory). Phosphor materials such as ZnS:(Ag,Li), ZnS:(Cu,Al), $Y_2O_2S:Eu$ were produced by spin coating on glass. Synchrotron radiation images were acquired and evaluated from monochromatic light from monochromoator in PAL 1B2line. From obtained object and phantom, MTF was 0.15 in ZnS:(Ag,Li) phosphor, and 0.178 in ZnS:( Cu,Al) at 151p/mm. MTFs were unsystematic because thickness of phosphor and uniformity of surface were not optimized. It's expected to improve MTF and the qualify of images as uniformity's optimized.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.33-36
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• 2009

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

• Journal of Sensor Science and Technology
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• v.31 no.5
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• pp.312-317
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• 2022

Piezoelectric energy harvesting has attracted increasing attention over the last decade as a means for generating sustainable and long-lasting energy from wasted mechanical energy. To develop self-powered wearable devices, piezoelectric materials should be flexible, stretchable, and bio-eco-friendly. This study proposed the fabrication of stretchable piezoelectric composites via dispersing perovskite-structured BaTiO₃ nanoparticles inside an Ecoflex polymeric matrix. In particular, the stretchable piezoelectric sensor array was fabricated via a simple and cost-effective spin-coating process by exploiting the piezoelectric composite comprising of BaTiO₃ nanoparticles, Ecoflex matrix, and stretchable Ag coated textile electrodes. The fabricated sensor generated an output voltage of ~4.3 V under repeated compressing deformations. Moreover, the piezoelectric sensor array exhibited robust mechanical stability during mechanical pushing of ~5,000 cycles. Finite element method with multiphysics COMSOL simulation program was employed to support the experimental output performance of the fabricated device. Finally, the stretchable piezoelectric sensor array can be used as a self-powered touch sensor that can effectively detect and distinguish mechanical stimuli, such as pressing by a human finger. The fabricated sensor demonstrated potential to be used in a stretchable, lead-free, and scalable piezoelectric sensor array.

• Progress in Superconductivity and Cryogenics
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• v.6 no.1
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• pp.12-17
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• 2004

High critical current density. $J_c$ over $1MA/cm^2$ at 77 K in a self field was successfully achieved from the YBCO film prepared on (100) $SrTiO_3$ single-crystal substrates by the TFA-MOD process. Unlike a normal TFA-MOD process, we prepared the TFA precursor solution by dissolving YBCO powder into the trifluoroacetic acid. A significant amount of the second phases, including $BaF_2$, was observed in the films fired at $700-725^{\circ}C$ for 2 h under $P(O_2)=10^{-3}$ atm and $P(H_2O)=4.2%$, most probably due to an insufficient reaction time, and hence $T_c$ was greatly degraded. However the films fired at $750-800^{\circ}C$ for 2 h were composed of strongly c-axis oriented YBCO grams without any second phases. and exhibited the $T_c$ values of 89.5 ~ 91 K with a sharp transition. With increasing the firing temperature from 750 to $800^{\circ}C$ average grain size of YBCO was increased and grain connectivity was enhanced. The highest $J_c$ value of $1.1MA/cm^2$ was obtained from the YBCO film fired at $800^{\circ}C$.

• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.114-119
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• 2016

In this study, we tried to add the conductivity to natural polymer like bacterial cellulose (BC) coated with the conductive polymer PEDOT:PEG, graphene and silver nano-wire (AgNW). Sulfuric acid of 10 to 20% was previously mixed with PEDOT:PEG and then the solution was electron spin-coated on the BC membrane. And then, additive coating with graphene and AgNW were done to improve conductivity, which was examined by hall effect. As the result, we confirmed a considerable improvement of conductivity compared to BC-coated film without sulfuric acid treatment as $2.487{\times}10^{10}$ vs $8.093{\times}10^{15}$ ($1/cm^3$), showing higher electron density with $3.25{\times}10^5$ times. Also, we identified that changed particle type to the polymer type by sulfuric acid using SEM analysis. For FT-IR analysis, it was confirmed that S-O radical ($1200cm^{-1}$) increased in the sulfuric acid treatment than non-treated sulfuric acid. As the method used very small amount of PEDOT:PEG, its transparency could be kept, and pre-treatment process of sulfuric acid will be able to simplify the production process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.430-430
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• 2007

In general, polyimides (PIs) are used in liquid crystal displays (LCDs) as alignment layer of liquid crystals (LCs). Up to date, the rubbing alignment technique has been widely used to align liquid crystals on the PI surface, which is suitable for mass-production of LCDs because of its simple process and high productivity. However, this method has some disadvantages. Rubbed PI surfaces include the debris left by the cloth and the generation of electrostatic charges during rubbing process. Therefore, rubbing-free techniques for LC alignment are strongly required in LCD technology. In this experiment, PI was uniformly coated on indium-tin-oxide electrode substrates to form LC alignment layers using a spin-coating method and the PI layers were subsequently imidized at 433 K for 1 h. The thickness of the PI layer was set at 50 nm. The LC alignment layer surfaces were exposed to an $Ar^+$ ion-beam under various ion-beam energies. The antiparallel cells and twisted-nematic (TN) cells for the measurement of pretile angle and electro-optical characteristics were fabricated with the cell gap of 60 and $5\;{\mu}m$, respectively. The LC cells were filled with nematic LC (NLC, MJ001929, Merck) and were assembled. The NLC alignment capability on ion-beam-treated PI was observed using photomicroscope and the pretilt angle of the NLC was measured by the crystal-rotation method at room temperature. Voltage-transmittance (V-T) and response time characteristics of the ion-beam irradiated TN cell were measured by a LCD evaluation system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.277-277
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• 2007

$(Bi,La)_4Ti_3O_{12}$ (BLT) 물질은 결정 방향에 따른 강한 이방성의 강유전 특성을 나타낸다. 따라서 BLT 박막을 이용하여 FeRAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 현재까지 연구된 BLT 박막의 방향성 조절 결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 중착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성 (random orientation)을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법 (sputtering deposition method), PLD법 (pulsed laser deposition method) 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요 없게 된다. PVD 증착법의 적용을 위해서는 타겟 (target)의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표 되지 않고 있다. 본 실험에서는 $Bi_2O_3$, $TiO_2$ and $La_2O_3$ 분말을 이용하여 최적의 조성을 구하기 위하여 Bi양을 변화시키며 타겟을 제조 하였다. 혼합된 분말을 하소 후 pallet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 표면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. Bi양이 3.28몰 첨가된 조성에서 최대의 잔류분극 (2Pr) 값을 얻었고, 이때의 값은 약 $18{\mu}C/cm^2$ 정도였다. 최적화된 조성 ($Bi_{3.28}La_{0.75}Ti_3O_{12}$)으로 BLT 타겟을 제조하여 PLD법으로 박막을 제조하였다. 박막 제조 시 압력은 $1{\times}10^{-1}\;{\sim}\;1{\times}10^{-4}\;Torr$ 범위에서 변화시켰다. $1{\times}10^{-1}\;Torr$ 압력을 제외하고는 모든 압력에서 BLT 박막이 증착되었다. 중착된 박막을 $650\;{\sim}\;800^{\circ}C$에서 30분간 열처리를 실시하고 전기적 특성을 평가한 결과, $1{\times}10^{-2}\;Torr$에서 증착한 박막에서 양호한 P-V (polarization-voltage) 이력곡선을 얻을 수 있었고, 이때의 잔류분극 (2Pr) 값은 약 $6\;{\mu}C/cm^2$ 이었다. 주사전자현미경 (SEM)을 이용하여 BLT 박막 표면의 미세구조도 관찰하였는데, 스핀코팅 법으로 증착한 경우에 관찰되었던 조대화된 입자들은 관찰되지 않았고, 상당히 양호한 입자 크기 균일도를 나타내었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.164-168
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• 2024

(La_0.7Sr_0.3)(Mn_1-xFe_x)O₃ (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO₂/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B_25/65-value increased. Electrical resistivity, TCR and B_25/65-value of the (La_0.7Sr_0.3)(Mn_0.88Fe_0.12)O₃ thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott's VRH model.