• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.457-460
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• 2006

Y doped zinc oxide (YZO) thin films were deposited on F doped $SnO_2$ (FTO) glass substrate by sol-gel method using the spin-coating system. A homogeneous and stable solution was prepared by dissolving acetate in the solution added diethanolamine as sol-gel stabilizer. YZO films were obtained after preheated on the hot-plate for 5minute before each coating; the number of coating was 3 times. After the coating of last step, annealing of YZO films performed at $450^{\circ}C$ for 30 minute. In order to confirming of a ultraviolet ray interruption and down-conversion effects, optical properties of YZO films, transmission spectrum and fluorescent spectrum were used. Also, for understanding the obtained results by experiment, the elestronic state of YZO was calculated using the density functional theory The results obtained by experiment were compared with calculated structure. The detail of electronic structure was obtained by the discrete variational Xa (DV-Xa) method, which is a sort of molecular orbital full potential method. The density of state and energy levels of dopant element were shown and discussed in association with optical properties.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.962-964
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• 1999

We studied emitting properties of devices fabricated using the spin-coating and Langmuir-Blodgett[LB] technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. Poly(3-hexylthiophene)[P3HT] LB films used as the emitting layer in light-emitting devices. LB monolayers were deposited 27 layers onto the indium-tin-oxide[ITO] as Y-type films by the vertical dipping method. The thickness is about 80nm. Absorption spectrum of LB films presented that P3HT is regiorandom conformation. Also, current-voltage-luminance characteristics and electroluminescence spectra of light-emitting devices fabricated by LB method is studied. In current-voltage-luminescence characteristics, turn-on voltage of P3HT LB film LEDs is higher than that of spin-coating LEDs. But electroluminescence spectrum is similar to the spin-coating LEDs. The orange-red light was clearly visible in a darkened room.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.329-329
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• 2013

본 연구에서는 PEDOT:PSS와 crystalline-ITO (c-ITO) 박막 계면에서의 화학적 반응을(박리 및 용해 특성)을 관찰하기위해 spin-coating 및 droplet dropping을 통하여 PEDOT:PSS 용액을 코팅하고 이후 화학적 거동에 따른 전기적, 광학적 및 구조적 특성 변화를 관찰하였다. 강산성을 띄는 PEDOT:PSS (Al 4083) 박막의 코팅 전, 0.4T sodalime glass 위에 열처리를 통하여 성막된 c-ITO 투명전극을 15분 동안 상압 오존 공정을 통하여 계면처리함으로써 다른 변수의 영향을 배제하였으며, 표면 처리 후 spin-coating 및 droplet dropping method를 통하여 PEDOT:PSS를 코팅하여 c-ITO와 PEDOT:PSS 계면사이의 화학적 반응의 영향을 시간 경과에 따라 분석하였다. PEDOT:PSS 코팅 후 솔밴트 제거를 위해 hot plate를 이용하여 $110^{\circ}C$로 열처리되었다. Spin-coating 방법과는 달리 droplet dropping 방법을 통해 형성된 c-ITO 투명전극/PEDOT:PSS 계면에서는 spin coating에서 적용된 동일한 공정변수적용에도 불구하고 PEDOT:PSS의 산성으로 인한 ITO 투명전극 표면에서의 화학적 조성변화가(In, Sn, O의 조성의 변화) 발생됨을 x-ray photoelectron spectroscopy 결과를 통해 확인하였다. 뿐만 아니라 계면 조성반응 변화에 따른 전기적 특성 및 광학적 투과율의 열화가 발생됨을 Hall measurement 측정과 UV/Vis spectrometer 결과를 통하여 도출하였다. 본 결과를 통해 c-ITO/PEDOT:PSS 사이에서 발생되는 내산특성/계면 화학변화가 유기태양전지에서의 산화물 투명전극과 유기물 계면 열화현상에 영향을 받을 수 있음을 나타낸다.

• Bulletin of the Korean Chemical Society
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• v.27 no.8
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• pp.1119-1120
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• 2006

• Bulletin of the Korean Chemical Society
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• v.26 no.3
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• pp.418-422
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• 2005

By introducing spin-coating method to the evaporation induced self-assembly (EISA) process, a simple and reproducible route in controlling the mesophase of silica thin films has been developed for the first time in this work. When a comparatively solvent-rich Si-sol (The atomic ratio of TEOS : F127 : HCl : $H_2O$ : EtOH = 1 : 0.006 : 0.2 : 9.2 : 30) was used as coating solution, the mesophase of resultant silica films was selectively controlled by adjusting the spin-on speed. The cubic mesophase has been obtained from the coating at a low rpm, such as 600 rpm, while the 2-D hexagonal mesophase is formed at a high rpm, such as 2,500 rpm. At a medium coating speed, a mixture of cubic and hexagonal mesophase has been found in the fabricated films. The present results confirm that the evaporation rate of volatile components at initial step is critical for the determination of mesopore structures during the EISA process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.11
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• pp.2214-2218
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• 2009

Dye-sensitized solar cell (DSC) has been considered as a possible alternative to current silicon based p-n junction photovoltaic devices due to its advantages of high efficiency, simple fabrication process and low production cost. Numerous researches for high efficient DSC in the various fields are under way even now. Among them, the compact layer, which prevents the back electron transfer between transparent conductive oxides and the redox electrolyte, is fabricated by various methods such as a ZnO dip-coating, $TiCl_4$ dip-coating, and Ti sputtering. In this study, we tried to fabricate the $TiO_2$ compact layer by the spin-coating method using aqueous $TiCl_4$ solution. The effect of the spin-coating method was checked as compared with conventional dip-coating method. As a result, DSC with a spin-coated compact layer had 33.4% and 6% better efficiency than standard DSC and DSC with a dip-coated compact layer.

• Korea-Australia Rheology Journal
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• v.14 no.2
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• pp.71-76
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• 2002

Metal thin films, which are indispensable constituents of ULSI (Ultra Large Scale Integration) circuits, have been fabricated by physical or chemical methods. However, these methods have a drawback of using expensive high vacuum instruments. In this work, the fabrication of tungsten metal film by spin coating was investigated. First of all, inorganic peroxopolytungstic acid (W-IPA) powder, which is soluble in water, was prepared by dissolving metal tungsten in hydrogen peroxide and by evaporating residual solvent. Then, the solution of W-IPA was mixed with organic solvent, which was spin-coated on wafers. And then, tungsten metal films, were obtained after reduction procedure. By selecting an appropriate organic solvent and irradiating UV, the sheet resistance of the tungsten metal film could be remarkably reduced.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.15-18
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• 2012

Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] and indium acetate [In$(CH_3COO)_3$] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to $1000^{\circ}C$, the thin film crystallizes into polycrystalline $In_2O_3$(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of $700^{\circ}C$ as $2{\Omega}{\cdot}cm$. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.6
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• pp.589-595
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• 2013

Solution processed conjugated molecules enable to manufacture various electronic devices by unconventional and cost effective patterning methods as screen or gravure printing. Spin-coating is the most popularly used method to form conjugated polymeric film for various electronic devices. The coating method has certain disadvantages such as a large amount of unwanted wastes, difficulty forming a film with a large area, and impossible to apply roll-to-roll manufacturing. We present here a promising alternative coating method, bar-coating for conjugated polymer film and OLED with the bar coated light emitting layer. In this papers, we show atomic force microscope images of spin- and bar-coated Poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT) films on substrate. The bar-coated film showed a slight lower RMS roughness (1.058 [nm]) than spin-coated film (1.767 [nm]). It means the bar-coating is suitable method to form light emitting layers in OLEDs. By using bar-coating process, an OLED obtained with 4.7 [cd/A] in maximum current efficiency.