• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.280-284
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• 2015

Au doped $TiO_2$ nanoparticles have been synthesized using a reverse micelle technique combined with metal alkoxide hydrolysis and condensation. Au doped $TiO_2$ was coated with glass substrate. The size of the particles and thickness of the coating can be controlled by manipulating the relative rates of the hydrolysis and condensation reaction of TTIP within the micro-emulsion. The average size of synthesized Au doped $TiO_2$ nanoparticle was about in the size range of 15 to 25 nm and the Au particles formed mainly the range of 2 to 10 nm in diameter. The effect of synthesis parameters, such as the molar ratio of water to TTIP and the molar ratio of water to surfactant, are discussed. The synthesized nanopaticles were coated on glass substrate by a spin coating process. The thickness of thin film was about 80 nm. The degradation of MB on a $TiO_2$ thin film was enhanced over 20 % efficiency by the incorporation of Au.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.222-222
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• 1999

From extensive measurements of the resistance and the dynamic resistance as functions of magnetic field and temperature, we find that the transport in the insulating state beyond the superconductor-insulator (S-I) transition is dominated by bosons(Cooper pairs and/or vortices) and cannot be described by the theory of the fermionic insulating phase. The maximum of the magnetoresistance at B = B$_m$ and the following negative slope in R(B) with increasing field can be explained by the crossover from the "Bose-glass" to the "Fermi-glass" phase as suggested by Paalanen, Hebard, and Ruel. The zero bias peak in dv/dl for biases below the characteristic voltage V$_c$ (or current $I_c$), gives a clue for the assumption of the "dirty boson" model which states that the insulating state above the critical magnetic field is the phase where Cooper pairs are localized due to the Coulomb blockade with a nonvanishing order parameter. The shift to a lower value of the critical magnetic field by overlaying thin Au layer, which is known as a strong spin-orbit scatterer, also supports the bosonic nature of the S-I transition.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.86-93
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• 2011

Transparent plasma display can be realized by developing the synthetic chemistry of appropriate nanophosphors and generating nanophosphor-based transparent luminescent layers. For this goal, red-emitting $Y(V_{0.5},\;P_{0.5})O_4$:Eu nanophosphors were synthesized by a facile hydrothermal route at $200^{\circ}C$ for 48 h and the resulting nanophosphors were subsequently annealed at $800^{\circ}C$ at an ambient atmosphere. The crystallographic structure, morphology, and emission property of the as-synthesized and annealed nanophosphors were compared. Choosing 2-methoxyethanol as a dispersion medium and applying a standard sonication, well-dispersed nanophosphor solutions could be prepared. Using these dispersions, visible transparent nanophosphor layers were spin-deposited on glass substrates. By combining $Y(V_{0.5},\;P_{0.5})O_4$:Eu nanophosphor layer/glass substrate as a rear plate with a front plate used in a conventional plasma display panels (PDPs), mini-sized transparent red-emitting PDPs were constructed. Transmittance and luminance properties of two transparent test panels using as-synthesized versus $800^{\circ}C$-annealed nanophosphors were characterized and compared.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1505-1507
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• 1996

In this study, $(Pb_{0.88}La_{0.12})(Zr_{0.40}Ti_{0.60})O_{2.97}$ (La/Zr/Ti=12/40/60) ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. PLZT stock solutions were made and spin-coated on the ITO-glass rubstrate at 4000[rpm] for 30[sec]. Coated specimens were baked to remove the organic materials at $400[^{\circ}C]$ for 10[min]. This procedure was repeated 5 times. The coated films were finally annealed at $450{\sim}700[^{\circ}C]$ for 1[hr]. The ferroelectric perovskite phases precipitated under the sintering of $550{\sim}700[^{\circ}C]$ for 1[hr]. Relative dielectric constant of the PLZT thin were increased with increasing the sintering temperature, the thin file sintered at $650[^{\circ}C]$ showed the highest value of 196. But in the PLZT thin film sintered at $700[^{\circ}C]$, relative dielectric constant was greatly decreased due to reacts between ITO electrode and glass substrate. In all thin films, the transmittance was more than 70[%] (at 632.8[nm]).

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1476-1477
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• 2008

This paper reports on a flexible flap valve actuated by electromagnetic force under a constant pressure source. The flexible flap valve consists of the three main components: a flexible flap with a steel disk embedded in PDMS, an electromagnetic actuator and two glass plates with inlet and outlet. Sealing lip structures for improving the valve characteristics are added on the outlet of the bottom glass substrate. The flap valve is fabricated by the spin-coating process, the EDM process, SU-8 mold process and oxygen plasma treatment. The dimension of an assembled flap valve is $12mm{\times}20mm{\times}28mm$. The stroke volume of the flap valve is measured for various pressures and open times. When the input voltage of 30 V is applied for 0.33 s, the minimum stroke volume of the flap valve is 70 ${\mu}L$ at 50 kPa.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1491-1493
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• 1997

In this study, Sol-Gel derived $Ba_{0.7}Sr_{0.3}TiO_3$ (BST(70/30)) thin films were investigated. The stock solution of BST were fabricated and spin-coated on the Pt/Ti/$SiO_2$/Si and ITO/glass substrates. The coated specimen were dried at $300^{\circ}C$ and finally annealed at $650{\sim}750^{\circ}C$. To analyse crystallization condition and microstructural morphology for different substrates, XRD, and SEM analysis were processed. In the BST(70/30) composition. dielectric constant and loss characteristics measured at 1kHz were 173, 0.01% for Pt/Ti/$SiO_2$/Si substrates and 181, 0.019% for ITO/glass substrates, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1511-1514
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• 2009

Organic light emitting layer in OLED device was formed by gravure printing process in this work. Organic surface coated by gravure printing typically showed relatively bad uniformity. Thickness and roughness control was characterized by applying various mixed solvents in this work. Poly (N-vinyl carbazole) (PVK) and fact-tris(2-phenylpyridine)iridium($Ir(ppy)_3$) are host dopant system materials. PVK was used as a host and Ir(ppy)3 as green-emitting dopant. To luminance efficiency of the plasma treatment on etched ITO glass and then PEDOT:PSS spin coated. The device layer structure of OLED devices is as follow Glass/ITO/PEDOT:PSS/PVK+Ir(ppy)3-Active layer /LiF/Al. It was printed by gravure printing technology for polymer light emitting diode (PLED). To control the thickness multi-printing technique was applied. As the number of the printing was increased the thickness enhancement was increased. To control the roughness of organic layer film, thermal annealing process was applied. The annealing temperature was varied from room temperature, $40^{\circ}C$, $80^{\circ}C$, to $120^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

• Journal of the Mineralogical Society of Korea
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• v.24 no.4
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• pp.301-312
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• 2011

The study on the atomic structure of iron-bearing silicate glasses has significant geological implications for both diverse igneous processes on Earth surface and ultra-low velocity zones at the core-mantle boundary. Here, we report experimental results on the effect of iron content on the atomic structure in iron-bearing alkali silicate glasses ($Na_2O-Fe_2O_3-SiO_2$ glasses, up to 16.07 wt% $Fe_2O_3$) using $^{29}Si$ and $^{17}O$ solid-state NMR spectroscopy. $^{29}Si$ spin-lattice ($T_1$) relaxation time for the glasses decreases with increasing iron content due to an enhanced interaction between nuclear spin and unpaired electron in iron. $^{29}Si$ MAS NMR spectra for the glasses show a decrease in signal intensity and an increase in peak width with increasing iron content. However, the heterogeneous peak broa-dening in $^{29}Si$ MAS NMR spectra suggests the heterogeneous distribution of $Q^n$ species around iron in iron-bearing silicate glasses. While nonbridging oxygen ($Na-O-Si$) and bridging oxygen (Si-O-Si) peaks are partially resolved in $^{17}O$ MAS NMR spectrum for iron-free silicate glass, it is difficult to distinguish the oxygen clusters in iron-bearing silicate glass. The Lorentzian peak shape for $^{29}Si$ and $^{17}O$ MAS NMR spectra may reflect life-time broadening due to spin-electron interaction. These results demonstrate that solid-state NMR can be an effective probe of the detailed structure in iron-bearing silicate glasses.

• Journal of the Microelectronics and Packaging Society
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• v.3 no.1
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• pp.33-40
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• 1996

MOD법에 의해 BST박막을 제조하고 전기적 특성을 측정함으로써 마이크로 회로에 적용가능성을 타진하였다. MOD 공정의 선구물질로서 barium neodecanoate, strontium 2-ethylhexanoate 및 titanium dimethoxy 야-2-ethylheanoate를 합성하였다, 합성된 선구물 질들을 Ba0.5Sr0.5TiO3가 되도록 화학양론적으로 혼합하여 공통용매인 p-xylene에 녹인다음 기판위에 spin coating 방법으로 박막을 형성하여 건조하고 소성하였다. 사용된 기판은 ITO/glass, Pt/SiO2/Si, Pt/Ti/SiO2/Si 및 Pt foil을 사용하였다. 소성 속도를 빨리했을 경우 소성속도를 느리게 했을때에 비하여 훨씬 균일하고 치밀한 박막을 얻을수 있었다, 여러 가 지 제조조건의 변화에 따른 유전상수 I-V 특성 및 C-V 측성 등의 전기적 특성을 측정하고 고찰하였다.