• The Journal of Korean Society for Radiation Therapy
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• v.16 no.2
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• pp.63-67
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• 2004

Purpose : New therapy technique appeared in 3D-CRT or IMRT according to a radiation treatment developing and worked. Such treatment technique requires the radiation irradiation of many direction. It has many restriction at radiation irradiation of many direction to the linear acceleration deception of now actually. Consequently We make new fix device and measure consequently the improvement of the activate range. Method and Material : We upload the fix device on a linear accelerator Couch. We fixed Gantry at 45, 90, 135 and Couch is spin and measure the clearance of the equipment. Couch is fixed at 0 45 90 and measures the clearance of Gantry. We upload the Extended head holder(EHH) on a linear accelerator Couch. and We measure with the experiment of the front. Result : The action range did not have big difference to increase Gantry45. but The activate range of Couch increases the angle in Gantry 90 and Gantry 135 when it uses EHH. The activate range of Gantry increases the angle in Couch 45 when it uses EHH. We showed good activate situation all in Couch 0 and Couch 90. The utility of EHH could keep a behind radiation diminution. Conclusion : The radiation irradiation of many direction comes to be possible the utility of the fix instrument(EHH). The safety space between the patient and equipment or between equipment and equipment increased the utility of the fix device. Also, The manufacture is possible imports to rather cheap price. and We could bring the frugality of the treatment expendable supplies.

• Korean Chemical Engineering Research
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• v.50 no.5
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• pp.929-932
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• 2012

Novel platform technology has been developed to replace the photolithography used currently for manufacturing semiconductors and display devices. As a substrate, plastics, especially polycarbonates, have been considered for future application such as flexible display. Other plastics, i.e. polyimide, polyetheretherketon, and polyethersulfone developed for the substrate at this moment, are available for photolithography due to their high glass transition temperature, instead of high price. After thin polystyrene film was coated on the polycarbonate substrate, microstructure of the film was formed with polydimethylsiloxane template over the glass transition temperature of the polystyrene. The surface of the structure was treated with potassium permanganate and octadecyltrimethoxysilane so that the surface became hydrophobic. After this surface treatment, the nanoparticles dispersed in aqueous solution were aligned in the structure followed by evaporation of the DI water. Without the treatment, the nanoparticles were placed on the undesired region of the structure. Therefore, the interfacial interaction was also utilized for the nanoparticle alignment. The surface was analyzed using X-ray photoelectron spectrometer. The evaporation of the solvent occurred after several drops of the solution where the hydrophilic nanoparticles were dispersed. During the evaporation, the alignment was precisely guided by the physical structure and the interfacial interaction. The alignment was applied to the electric device.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.270-275
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• 2013

Single-layer graphene layers have been synthesized by using chemical vapor deposition, subsequently transferred on 300 nm $SiO_2/Si$ and quartz substrates, and doped with $AuCl_3$ by spin coating for various doping concentrations ($n_D$) from 1 to 10 mM. Based on the $n_D$-dependent variations of Raman frequencies/peak-intensity ratios, sheet resistance, work function, and Dirac point, measured by structural, optical, and electrical analysis techniques, the p-type nature of graphene is shown to be strengthened with increasing $n_D$. Especially, as estimated from the drain current-gate voltage curves of graphene field effect transistors, the hole mobility is very little varied with increasing $n_D$, in strong contrast with the $n_D$-dependent large variation of electron mobility. These results suggest that $AuCl_3$ is one of the best p-type dopants for graphene and is promising for device applications of the doped graphene.

• Journal of Korean Ophthalmic Optics Society
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• v.10 no.3
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• pp.193-203
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• 2005

Highly c-axis oriented nanocrystalline ZnO thin films on silica glass substrates were prepared by spin coating-pyrolysis process with a zinc naphthenate precursor. Only the XRD intensity peak of (002) phase was observed for all samples. With an increase in heat treatment temperature, the peak intensity of (002) phase increases. No significant aggregation of particle was present. From scanning probe microscopy analyses, three-dimensional grain growth, which was thought to be due to inhomogeneous substrate surface and c-axis oriented grain growth of the ZnO phase, was independent on heal-treatment temperature. Highly homogeneous surface of the highly-oriented ZnO film was observed at $800^{\circ}C$. All the films exhibited a high transmittance (above 80%) in visible region except film heat treated at $1000^{\circ}C$, and showed a sharp fundamental absorption edge at about $0.38{\sim}0.40{\mu}m$. The estimated energy band gap for all the films were within the range previously reported for films and single crystal. ZnO films, consisting of densely packed grains with smooth surface morphology were obtained by heat treatment at $600^{\circ}C{\sim}800^{\circ}C$, expected to be ideal for practical application, such as transparent conductive film and optical device.

• Polymer(Korea)
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• v.33 no.5
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• pp.407-412
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• 2009

Vacuum deposited N,N-di-1-naphthyl-N,N-diphenyl-1,1'-biphenyl-4,4'-diamine (NPD) as a hole transporting (HTL) materials in OLEDs was placed on PEDOT-PSS, a hole injection layer (HIL). PEDOT-PSS was spin-coated on to the ITO glass. $C_{60}$-doped NPD-$C_{60}$(10 wt%) film was formed via co-evaporation process and the morphology of NPD-$C_{60}$ films was investigated using XRD and AFM. The J - V, L - V and current efficiency of multi -layered devices were characterized. According to XRD results, the deposited $C_{60}$ thin film was partially crystalline, but NPD-$C_{60}$ film was observed not to be crystalline, which indicates that $C_{60}$ molecules are uniformly dispersed in the NPD film. By using $C_{60}$-doped NPD-$C_{60}$ film as a HTL, the current density and luminance of multi-layered ITO/PEDOT-PSS/NPD-$C_{60}/Alq_3$/LiF/Al device were significantly increased by about 80% and its efficiency was improved by about 25% in this study.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.263-272
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• 2011

Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

• Clean Technology
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• v.18 no.4
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• pp.366-372
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• 2012

Three acrylic copolymers containing tris(8-hydroxyquinoline) aluminum (AlQ3) pendant group (25 wt%), acrylateco-HEMA-$AlQ_3$ (25 wt%), were successfully synthesized by free radical polymerization from acrylates [methyl methacrylate (MMA), acrylonitrile (AN) or 2-hydroxyethyl methacrylate (HEMA)] with HEMA functionalized with AlQ3 pendant groups (HEMA-p-$AlQ_3$). The glass transition temperatures ($T_g$) of MMA-co-HEMA-p-$AlQ_3$ (copolymer 1), AN-co-HEMA-p-$AlQ_3$ (copolymer 2) and HEMA-co-HEMA-p-$AlQ_3$ (copolymer 3) were found to be 158, 150 and $126^{\circ}C$, respectively. They have good thermal stability: a very desirable feature for the stability of OLEDs. Their solubility, thermal properties, UV-visible absorption and photoluminescence behaviors were investigated. They were found to be soluble in various organic solvents such as tetrahydrofuran (THF), dimethylformamide (DMF), toluene and chloroform. It was also found that the UV-visible absorption and photoluminescence behaviors of these copolymers were similar to those of pristine $AlQ_3$. Green organic light-emitting diodes (OLEDs) have also been fabricated using these copolymers as light emission/electron transport components obtained easily by spin coating, and their current density voltage (J-V) curves were compared. The OLED device of the copolymer 3 had the lowest turn-on voltage of about 2 V compared to other copolymer types devices.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.285-295
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• 1999

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.6 no.10
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• pp.373-382
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• 2016

Under the Agricultural technology is influenced from climate that is requisite of seasonal. So this system will cover the problems and develop the agricultural industry as well. So far, the agricultural industry is developing however, it has the points of the weakness because of natural disasters such as wind risk and heavy snow. This paper designs system to change vinyl on the greenhouse. This is a preliminary study for the real-time feedback control of greenhouse. The study developed a wireless IoT sensor system based on authentic technology capacities, to integrate with the protected horticulture Management System. These system was used to evaluate the levels of the snow cover and wind through IoT devices. The existing greenhouse uses the warm water to clear snow or to change methods. This system will recover by changing the vinyl which is covered outside of the greenhouse. The points of the system is changing vinyl to spin pipe. It is contained extra vinyl. The effects of this system are minimized labor protected crops from natural disasters. For this purpose, the study first developed a wireless IoT sensor unit that integrates an MEMS device and wireless communication module. Also, the study developed an operating program that enables real-time response measurement. It will help operational and maintenance greenhouse as a result.

• Journal of the Korean Society of Radiology
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• v.17 no.7
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• pp.1133-1138
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• 2023

This study analyzed the relationship between image parameters and specific absorption rate (SAR) in various sequence environments to optimize SAR. For this purpose, image parameters were adjusted for T2, T1, STIR, T1 FLAIR, and T2 FLAIR sequences in a 3.0T MRI, and the whole body (WB) SAR and head SAR calculated by the device were measured. Then, the SAR was evaluated by adjusting the number of images and the flip angle (FA) of the refocusing RF. As a result, SAR increased as the number of image increased in all sequences. T1 and T1 FLAIR had correlation coefficients (r) of 0.876, 0.876 (WB SAR, head SAR), 0.867, 0.867 (WB SAR, head SAR), respectively, and STIR had the highest correlation with 0.898 and 0.899 (WB SAR, head SAR). showed (p<0.05). When applied by increasing the refocusing FA, WB SAR and head SAR increased overall in all sequences. The T1 and T2 sequences showed high correlation with correlation coefficients (r) of 0.897, 0.898 (WB SAR, head SAR) and 0.914, 0.915 (WB SAR, head SAR), respectively, while the sequences to which the inversion recovery technique was applied had relatively low FA, showed less sensitivity to increase. Therefore, in a sequence with a relatively low TR, minimizing the number of image and applying the fast spin echo to reduce the refocusing FA in a sequence with a high duty cycle are effective in reducing SAR.