• 한국재료학회지
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• 제14권8호
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• pp.542-546
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• 2004

We report a new fabrication process for high performance triode type CNT field emitters and their superior electrical properties. The CNT-based triode-type field emitter structure was fabricated by the conventional semiconductor processes. The keys of the fabrication process are spin-on-glass coating and trim-and-leveling of the carbon nanotubes grown in trench structures by employing a chemical mechanical polishing process. They lead to strong adhesion and a uniform distance from the carbon nanotube tips to the electrode. The measured emission property of the arrays showed a remarkably uniform and high current density. The gate leakage current could be remarkably reduced by coating of thin $SiO_{2}$ insulating layer over the gate metal. The field enhancement factor(${\beta}$) and emission area(${\alpha}$) were calculated from the F-N plot. This process can be applicable to fabrication of high power CNT vacuum transistors with good electrical performance.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.514-520
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• 1999

Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• 대한기계학회논문집A
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• 제21권1호
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• pp.83-92
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• 1997

In a study on the development of Cu-based sintered friction materials, the specimens pressed with various compacting pressures $(3-6 ton/cm^2/)$ have been evaluated to find the optimum condition of compacting pressure. As compacting pressure increased up to $(5 ton/cm^2/)$, mechanical properties such as density, hardness, bending strength, wear and coefficient of friction, etc. improved remarkably, but up to 6 ton/cm$^{2}$, decreased slightly because of traps of gases and water vapors in specimen. Disk assembly composed of 12 pieces of Cu-based friction materials has been compared with one of asbestos-and nonasbestos-based friction materials. In dynamic and driving tests to find burst spin strength, corrosion area rate and friction properties, etc., Cu-based sintered friction materials showed better properties than the others, especially in severe conditions because oxides such as $Cu_2O; and; SnO_2$ in the friction surface of friction materials were formed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.140-140
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• 2012

최근에 고체산화물 연료전지(SOFC) 연료극 조건에서 우수한 상 안정성, 높은 혼합 전자/이온 전도도 및 황/탄소 저항성 때문에 yttrium-doped strontium titanium oxide (Y-doped SrTiO3)가 대체 연료극 재료로 주목을 받아 왔다. 그러나 Y-doped SrTiO3는 연료 산화에 대해서 기존의 Ni 계열 연료극보다 낮은 전기화학적 활성을 보이는 단점이 있다. 따라서, 효율적인 Y-doped SrTiO3 계열의 연료극 재료를 개발하기 위해서는 Y-doped SrTiO3의 연료극 특성 및 반응성의 이해가 필수적이다. 본 발표에서는 SOFC 연료극에서 수소 산화 반응성을 결정함에 있어 표면 산소 vacancy 형성 에너지의 역할에 대한 spin-polarized DFT (density functional theory) 결과를 발표할 예정이다. 표면 산소 vacancy 형성 에너지는 수소 산화 반응[H2+O (surface) ${\rightarrow}$ OH+OH ${\rightarrow}$ H2O+O (vacancy)]과 밀접한 관계가 있다는 것을 확인하였다. 또한 Y-doped SrTiO3의 표면을 3d-전이금속을(Sc, V, Cr, Fe, Co, Mn, Ni, Cu) 도핑함으로써 표면 산소 vacancy 형성 에너지를 제어할 수 있다는 것을 보였다.

• Bulletin of the Korean Chemical Society
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• 제32권spc8호
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• pp.3045-3050
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• 2011

The synthesis of copolymers containing thiophene and benzimidazole unit by Stille polymerization is reported. The polymers with many unsubstituted thiophene units in the backbone have been reported to show low solubility, which has been a problem for spin-coating for the device fabrication. In dihexyl-2H-benzimidazole, the sulfur at 2-position of BT unit was replaced with dialkyl substituted carbon, while keeping the 1,2-quinoid form, to improve the solubility of the polymers. The PL emission spectra of the PHBIT1, PHBIT2 and PHBIT3 in chloroform solutions show maximum peaks at 500~561 nm. In thin films, maximum peaks of the PHBITs appeared at 529, 562 and 569 nm, respectively. The EL emission maxima of the PHBIT1 and PHBIT2 appear at around 588 and 576 nm, respectively. The current density and maximum luminescence of the LED with the configuration of ITO/PEDOT/ PHBIT2/Ca/Al are 552 mA/$cm^2$ and 46 cd/$m^2$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.468-470
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• 2004

CNT pastes with different inorganic binder such as glass frit and spin on glass (SOG) were synthesized by using multi-walled nanotube (MWNT) grown by CVD. The uniformity of cathode layer after firing was enhanced and the emission current density at an applied field of 7.95V/${\mu}m$ increased from 133${\mu}A$/$cm^2$ to 265${\mu}A$/$cm^2$ when inorganic binder changed from glass frit to SOG. The emission properties of CNT pastes with SOG were stable and uniform although firing was carried out at relatively high temperature of 450$^{\circ}C$ under air. It is concluded that SOG is more suitable inorganic binder than glass frit for field emission application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.90-93
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• 2002

In the surface pressure-area isotherms of mixed monolayers, mixtures containing as much as 30 mol% of AA form stable condensed monolayer while the monolayer without AA is in the expanded state because PVK take on 3D collapsed. All of the mixed monolayers with 0, 10, 20 and 30 mol% of AA could be readily transferred onto ITO substrate at 16, 17, 24 and 26 mN/m, respectively. The monolayer containing 30 mol% of AA, however, showed a roughness value of 28A and became homogeneous decreasing with the phase separation. We fabricated organic EL device of ITO/CuPc/MEL/BBOT/iLiF/Al using mixed monolayer of 13, 19 and 25 layer deposited by LB method as a emitting layer. In the voltage-current characteristics of EL device, current density was much smaller than that of the spin-coated devices. It may due to the large contact resistance existed at the interface of LB layer/organic layer inhibit carrier injection to the emitting layer. EL spectra of device showed peaks at 450. 470, 505, 555 and 650 nm and the white light emission indicate the CIE coordinate x=0.306, y=0.353.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.14-16
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• 1995

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ co-ramic thin films were formed by spin coating method on Pt/$SiO_2$/Si substrate at 4000[rpm] for 30 [sec]. Coated specimens were dried on the hot-plate at 400[$^{\circ}C$] for 10[min]. The coating process was repeated 6 times and then sintered at temperature between 500 ~ 800[$^{\circ}C$] for 1 hour. The ferroelectric perovskite phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ thin film sintered at 700[$^{\circ}C$] for 1hour showed good dielectric constant (2133) and dielectric loss (2.2[%]) Properties. The switching voltage, switching time and leakage currents density were 3.0[V], 1.7[${\mu}$sec] , 160[pA/$\textrm{cm}^2$] repectively.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2007년도 추계학술대회논문집
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• pp.77-81
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• 2007

Pentacene was dissolved in N-methyspyrrolidone (NMP) and mixed with poly(3,4-ethylenedioxythiophene), poly(styrenesulfonate) (PEDOT:PSS). The solution color changed from deep purple to intense yellow. As the dissolution time increased, visible absorption decreased and ultraviolet (UV) absorption increased. PEDOT:PSS or Pentacene-PEDOT:PSS was spin-coated to control the layer thickness. Three-layered Schottky diodes consisting of Al, PEDOT:PSS or PEDOT:PSS-pentacene, and Au with thickness of 300nm, respectively, were fabricated. The current densities of $4.8{\mu}A/cm^2$ at 2.5MV/m and $660{\mu}A/cm^2$ at 1.9MV/m were obtained for the Au/PEDOT:PSS/Al and Au/Pentacene-PEDOT:PSS/Al Schottky diodes, respectively. The current density of the Schottky diode was enhanced by about two orders of magnitude by doping pentacene to PEDOT:PSS.