• 제목/요약/키워드: Spin density

검색결과 345건 처리시간 0.036초

Epitaxial Growth of Bi2Se3 on a Metal Substrate

  • 전정흠;장원준;윤종건;강세종
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.306-306
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    • 2011
  • Three dimensional(3D) topological insulators(TIs) of Bi binary alloys are characterized by a bulk energy gap with strong spin-orbit coupling and metallic surface states protected by time-reversal symmetry. It was reported that film forms of such materials were advantageous over bulk forms due to less defect density and better crystallinity. So far, the films have been prepared on several substrates including semiconductors and graphene. But, there were no studies on metal substrates. For electronic transport experiments and device applications, it is necessary to know epitaxial relation between TIs and metal electrodes. In this study, Atomically flat films of Bi2Se3 were grown on a Au(111) metal substrate by in-situ molecular beam epitaxy. Using home-built scanning tunneling microscope, we observed hexagonal atomic structures which corresponded to the outmost selenium atomic layer of Bi2Se3. Triangular-shaped defects known as Selenium vacancy were also found.

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Development of magnetism in armchair graphene nanoribbons with edge functionalizations: A first-principles study

  • Shin, Dongjae;Kim, Yong-Hoon
    • EDISON SW 활용 경진대회 논문집
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    • 제6회(2017년)
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    • pp.376-382
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    • 2017
  • Graphene nanoribbons with zigzag-shaped edge (zGNRs) are predicted to be magnetic insulator at the ground state, attracting significant interest in view of spintronic applications [1]. On the other hand, although they are energetically and thermodynamically more favored than zGNRs [2], graphene nanoribbons with armchair-shaped edge (aGNRs) have been less spotlighted than zGNRs due to the absence of magnetism. Herein, based on the combined density functional theory (DFT) and matrix Green's function (MGF) approach, we consider aGNRs functionalized with various molecular groups, and show that the spin polarizations develop for some of the considered aGNR edge functionalization cases. The origin of the induced magnetism will be discussed within the Lieb's theorem [3]. This work will provide a novel guidance for the development of graphene-based spintronic devices.

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전자스핀공명을 이용한 저밀도 폴리에틸렌의 방사선 열화 검지 (Detection of Radiation Degradation of LDPE by ESR Spectroscopy)

  • 김기엽;이청;류부형
    • 한국안전학회지
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    • 제20권1호
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    • pp.81-86
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    • 2005
  • This study has investigated radiation degradation of low density polyethylene(LDPE). Samples were irradiated up to 800kGy using a $Co^{60}\;\gamma-ray$ at a dose rate of 5kGy/hr in the presence of air atmosphere at room temperature. After irradiation, storing for 2 weeks, free radical measurement of LDPE has established by electron spin resonance(ESR). ESR measurement showed that free radical concentration(FRC) was increased with radiation dose and decreased with the time. The radical types showed alkyl, allyl, and peroxy radical with the irradiation, these changed to peroxy radical with the time.

Synthesis and pressure effects on the La doped CaFe2As2

  • Shin, Soohyeon;Shang, T.;Yuan, H.Q.;Park, Tuson
    • 한국초전도ㆍ저온공학회논문지
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    • 제16권3호
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    • pp.1-3
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    • 2014
  • We have synthesized La doped $CaFe_2As_2$ single crystals with Sn flux in an evacuated quartz ampule. Doping and pressure effects on the magnetic and superconducting properties of the under-doped $Ca_{1-x}La_xFe_2As_2$ (x=0.08, 0.1) were studied by measuring electrical resistivity under quasi-hydrostatic pressure up to 21 kbar. Magnetic transition temperatures for all studied concentrations were sharply suppressed with slight amplitude of pressure, less than 3 kbar, while superconducting transition temperatures were robust against pressure. In this communication, we report temperature-pressure phase diagram for the La-doped $CaFe_2As_2$ single crystals.

A Study and Investigation on the Influence of Static and Dynamic Loading on the Properties of Handmade Persian Carpet (I) - The Effect of Static Loading -

  • Mirjalili S. A.;Sharzehee M.
    • Fibers and Polymers
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    • 제6권2호
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    • pp.139-145
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    • 2005
  • The paper reports the physical and mechanical properties of hand-woven carpets, which have been put under static force. Two groups of wool fibres, from two parts of Iran, were prepared to spin pile yams for the carpets. Each group of the fibres included both conventional and tanned wool. Then two yam counts, $N_m$ = 4/2 and 6/2, were spun for two different knot densities. After weaving the carpets, they were put under static force and their thickness variations were measured and plotted against time, in logarithm scale. The resiliency of the carpets piles after eliminating the static force, were measured and plotted against time, in logarithm scale, too. The results were compared to each other and analysed with respect to parameters such as the type and quality of the wool fibres as well as knot density of the carpets.

Stability of Amorphous Silicon Thin-Film Transistor using Planarized Gate

  • Choi, Young-Jin;Woo, In-Keun;Lim, Byung-Cheon;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.15-16
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    • 2000
  • The gate bias stress effect of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a $SiN_x/BCB$ gate insulator have been studied. The gate planarization was carried out by spin-coating of BCB (benzocyclobutene) on Cr gates. The BCB exhibits charge trappings during a high gate bias, but the stability of the TFT is the same as conventional one when it is between -25 V and +25 V. The charge trap density in the BCB increases with its thickness.

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Energy Consumption Evaluation for Two-Level Cache with Non-Volatile Memory Targeting Mobile Processors

  • Matsuno, Shota;Togawa, Masashi;Yanagisawa, Masao;Kimura, Shinji;Sugibayashi, Tadahiko;Togawa, Nozomu
    • IEIE Transactions on Smart Processing and Computing
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    • 제2권4호
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    • pp.226-239
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    • 2013
  • A number of systems have several on-chip memories with cache memory being one of them. Conventional cache memory consists of SRAM but the ratio of static energy to the total energy of the memory architecture becomes larger as the leakage power of traditional SRAM increases. Spin-Torque Transfer RAM (STT-RAM), which is a variety of Non-Volatile Memory (NVM), has many advantages over SRAM, such as high density, low leakage power, and non-volatility, but it consumes too much writing energy. This study evaluated a wide range of energy consumptions of a two-level cache using NVM partially on a mobile processor. Through a number of experimental evaluations, it was confirmed that the use of NVM partially in the two-level cache effectively reduces energy consumption significantly.

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Synthesis of Highly Concentrated ZnO Nanorod Sol by Sol-gel Method and their Applications for Inverted Organic Solar Cells

  • Kim, Solee;Kim, Young Chai;Oh, Seong-Geun
    • Korean Chemical Engineering Research
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    • 제53권3호
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    • pp.350-356
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    • 2015
  • The effects of the zinc oxide (ZnO) preparing process on the performance of inverted organic photovoltaic cells (OPVs) were explored. The morphology and size of ZnO nanoparticles were controlled, leading to more efficient charge collection from device and higher electron mobility compared with nanospheres. Nanosized ZnO particles were synthesized by using zinc acetate dihydrate and potassium hydroxide in methanol. Also, water was added into the reaction medium to control the morphology of ZnO nanocrystals from spherical particles to rods, and $NH_4OH$ was used to prevent the gelation of dispersion. Solution-processed ZnO thin films were deposited onto the ITO/glass substrate by using spin coating process and then ZnO films were used as an electron transport layer in inverted organic photovoltaic cells. The analyses were carried out by using TEM, FE-SEM, AFM, DLS, UV-Vis spectroscopy, current density-voltage characteristics and solar simulator.

ZnS:CU를 이용한 후막 전계 발광소자에 관한 연구 (A Study on Powder Electroluminescencent Device using ZnS:Cu)

  • 이종찬;박대희;박용규
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.121-124
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    • 1998
  • Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

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