• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.106-107
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.191.1-191.1
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.260.1-260.1
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• 2008

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1476-1477
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• 2008

This paper reports on a flexible flap valve actuated by electromagnetic force under a constant pressure source. The flexible flap valve consists of the three main components: a flexible flap with a steel disk embedded in PDMS, an electromagnetic actuator and two glass plates with inlet and outlet. Sealing lip structures for improving the valve characteristics are added on the outlet of the bottom glass substrate. The flap valve is fabricated by the spin-coating process, the EDM process, SU-8 mold process and oxygen plasma treatment. The dimension of an assembled flap valve is $12mm{\times}20mm{\times}28mm$. The stroke volume of the flap valve is measured for various pressures and open times. When the input voltage of 30 V is applied for 0.33 s, the minimum stroke volume of the flap valve is 70 ${\mu}L$ at 50 kPa.

• Journal of Magnetics
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• v.10 no.2
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• pp.48-51
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• 2005

The spin transfer induced magnetization switching has been reported to occur in magnetic multilayer structures whose scope usually consists of one stack of ferromagnetic / non-ferromagnetic / ferromagnetic (F / N / F) materials. In this work, it is shown that: 1) Copper used as a buffer layer between the free Co and the Au cap-layer can clearly increase the probability to get the spin transfer induced magnetization switching in a simple spin valve Co 11 / Cu 6/ Co 2 (nm); 2) Furthermore, when Ruthenium is simultaneously applied as a buffer layer on the Si-substrate, the critical switching currents can be reduced by $30\%$, and the absolute resistance change delta R $[{\Delta}R]$ of that stack can be enlarged by $35\%$. The enhancement of the spin transfer induced magnetization switching can be ascribed to a lower local stress in the thin Co layer caused by a better lattice match between Co and Cu and the smoothening effect of Ru on the thick Co layer.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.211-216
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• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.288-294
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• 1998

Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increase with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum "effective" free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.have used.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.5-32
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• 2000

MRAM, High performance MRAM using MTJS demostrated, fully integrated MTJ MRAM with CMOS circuits, write time ~2.3 nsec; read time ~3 nsec, Thermally stable up to ~350 C, Switching field distibution controlled by size & shape. Magnetic Tunnel Junction Properties, Magnetoresistance: ~50% at room temperature, enhanced by thermal treatment, Negative and Positive MR by interface modification, Spin Polarization: >55% at 0.25K, Insensitive ot FM composition, Resistance $\times$ Area product, ranging from ~20 to 10$^{9}$ $\Omega$(${\mu}{\textrm}{m}$)$^{2}$, Spin valve transistor, Tunnel injected spin polarization for "hot" electrons, Decrease of MTJMR at high bias originates from anode.

• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.52-53
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• 1998

• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.50-51
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• 1998