• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 자성 및 자성재료 국제학술대회
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• pp.171-172
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• 2015

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2016년도 임시총회 및 하계학술연구발표회
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• pp.97-97
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• 2016

• Advances in nano research
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• 제1권4호
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• pp.203-210
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• 2013

So far, all reviews and control approaches of spin relaxation have been done on lateral single electron quantum dots. In such structures, many efforts have been done, in order to eliminate spin-lattice relaxation, to obtain equal Rashba and linear Dresselhaus parameters. But, ratio of these parameters can be adjustable up to 0.7 in a material like GaAs under high-electric field magnitudes. In this article we have proposed a single electron QD structure, where confinements in all of three directions are considered to be almost identical. In this case the effect of cubic Dresselhaus interaction will have a significant amount, which undermines the linear effect of Dresselhaus while it was destructive in lateral QDs. Then it enhances the ratio of the Rashba and Dresselhaus parameters in the proposed structure as much as required and decreases the spin states up and down mixing and the deviation angle from the net spin-down As a result to the least possible value.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 임시총회 및 하계학술연구발표회
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• pp.152-153
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• 2009

• 한국소음진동공학회논문집
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• 제11권4호
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• pp.31-36
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• 2001

A spin coater is a machine to coat wafer or LCD display with thin film. Vibration in the spin coater may be one of main troubles in the coating process. In this paper, we focus on the difference between two spin coaters. Vibration sources are identified by experimental approach and are compared to find the difference between the two spin coaters. Also, the particle concentration is observed by laser particle counter (LPC) for the two spin coaters, when the spin coaxers are working. It is also considered whether the defect rate is proportional to the particle concentration. The result shows that particle generation in the coating process is related to excessive vibration of the spin coater shaft and the particles influence the defect rate of the thin film product.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1056-1060
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• 2005

We investigated the fabrication and characteristics of the nitride-based spin-polarized LEDs with room-temperature ferromagnetic (Ga,Mn)N layer as a spin injection source. The (Ga,Mn)N thin films having room-temperature ferromagnetic ordering were found to exhibit the negative MR and anomalous Hall resistance up to room temperature, revealing the existence of spin-polarized electrons in (Ga,Mn)N films at room temperature. The electrical characteristics in the spin LEDs did not degraded in spite of the insertion of the (Ga,Mn)N layer into the LED structure. In EL spectra of the spin LEDs, it is confirmed that the devices produce intense EL emission at 7 K as well as room temperature. These results are expected to open up new opportunities to realize room-temperature operating semiconductor spintronic devices.

• Journal of Magnetics
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• 제14권1호
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• pp.23-26
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• 2009

Spin injection from a ferromagnet into an n-doped $In_{0.53}Ga_{0.47}As$ channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of $2\;{\mu}V$ and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.

• Journal of Magnetics
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• 제16권1호
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• pp.6-9
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• 2011

Spin-motive force has drawn attention because it contains a fundamental physical property. Spin-motive force creates effective electric and magnetic fields in moving magnetization; a vortex is a plausible system for observing the spin-motive force because of the abrupt profile of magnetization. However, the time-averaged value of a spin-motive force becomes zero when a vortex core undergoes gyroscopic motion. By means of micromagnetic simulation, we demonstrates that a non-zero time-averaged electric field induced by spin-motive force under certain conditions. We propose an experimental method of detecting spin-motive force that provides a better understanding of spin transport in ferromagnetic system.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.219.1-219.1
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• 2008

• Current Applied Physics
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• 제18권11호
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• pp.1447-1450
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• 2018

The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.