• Title/Summary/Keyword: Spin

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Electric Field Induced by Spin-motive Force in a Perforated Nanodisk

  • Moon, J.H.;Lee, K.J.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2010.06a
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    • pp.137-138
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    • 2010
  • A model system allowing the experimental determination of the spin-motive force from the vortex gyration motion in a circular nanodisk is presented. It can be one way to get experimental detection of the spin-motive force and it will provide an important tool to study the relationship between the charge and spin transports in ferromagnetic system.

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Analysis of Spin state of SrCoO2.5+x by DFT Calculation

  • Ryu, Ji-Hun;Im, Jin-Yeong
    • Proceeding of EDISON Challenge
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    • 2014.03a
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    • pp.430-433
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    • 2014
  • Perovskite 구조를 가진 코발트 산화물 $SrCoO_3$와 Brownmillerite 구조인 $SrCoO_{2.5}$의 electronic structure를 제1원리 계산을 통해 분석하였다. 이들의 magnetic structure를 계산하여 실험을 통해 알려진 값과 비교하였고, 각 구조에서 코발트 이온이 갖는 spin state를 확인할 수 있었다. 코발트 이온은 $SrCoO_3$에서 intermediate spin state(IS)를, $SrCoO_{2.5}$에서는 high spin state(HS)를 갖는데 이것이 lattice constant의 차이에 의한 것인지, 아니라면 차이의 원인은 무엇인지 density of state를 분석함으로써 알아보았다.

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Micromagnetic simulations based on directly observed microstructures

  • Lee, Je-Hyun;Kim, Sang-Koog
    • Proceedings of the Korean Magnestics Society Conference
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    • 2011.12a
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    • pp.9-10
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    • 2011
  • We have prepared FePtCu L10 bit patterned media, of which magnetic properties and microstructural details are obtained by direct measurement and observations. The patterning process on the continuous film induced a drastic changes in the coercivity, SFD, and angular dependencies. The origin of the changes are explained by micromagnetic simulations with the finite element models including the details of the microstructures.

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Diffusion of Impurities Into Silicon by Spin-on Sources (Spin-On source에 의한 실리콘내의 불순물 확산)

  • 김충기;정태원
    • 전기의세계
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    • v.27 no.6
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    • pp.69-75
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    • 1978
  • Diffusion processes of boron, phosphorus, and arsenic into silicon have been investigated using a new diffusion source called "spin-on source". Diffusion coefficients of these impurities have been calculated from the experimental results and are compared with the published values. Reasonable agreements have been found between the calculated and the published values. From this study, it is concluded that the spin-on source can be used as the diffusion source for integrated circuit fabricaticon.ricaticon.

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