• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.9-13
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• 2002

Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.42.2-42.2
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• 2015

High frequency peakers (HFPs) are promising candidates for young active galactic nuclei (AGNs). Their small physical scale (< 1 kpc) and radio spectrum peaked at high frequency (> 5 GHz) are suggestive that it has been only about $10^2-10^3$ years since a central massive black hole in their host galaxies was launched. Until recently however, long-term monitoring radio observations at frequencies which are high enough to cover the true peak of HFP candidates were rare. Therefore, previous HFP samples are often contaminated by blazars, which are highly variable, hence may show a similar radio spectrum as HFPs depending on the observational epoch. In this work, we challenge to identify genuine young AGNs by monitoring HFP candidates at high radio frequencies. We performed single-dish monitoring of 19 candidates in 18 epochs over 2.5 years at 22 and 43 GHz using the Korean VLBI Network (KVN). Also, using KaVA, a combined array of the KVN and the VERA in Japan, we carried out 22 GHz VLBI observations of two HFPs and one blazar selected from our sample in order to compare their parsec scale (milli-arcsecond scale) morphology. HFPs are expected to have double/triple features, so called compact symmetric objects, which are scaled-down versions of extended radio galaxies, while blazars typically show core-jet morphology. We discuss the properties of AGNs at their very early evolutionary stage based on the results of the KVN and KaVA observations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• Bulletin of the Korean Chemical Society
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• v.25 no.5
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• pp.652-656
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• 2004

A new luminescent polymer, poly{1,4-phenylene-1,2-ethenediyl-2'-[2"-(4'"-octyloxyphenyl)-(5"-yl)-1",3",4"-oxadiazole]-1,4-phenylene-1,2-ethenediyl-2,5-bis-dodecyloxy-1,4-phenylene-1,2-ethenediyl} (Oxd-PPV), was synthesized by the Heck coupling reaction. Electron withdrawing pendant, conjugated 1,3,4-oxadiazole (Oxd), is on the vinylene unit. The band gap of the polymer figured out from the UV-visible spectrum was 2.23 eV and the polymer film shows bright yellow emission maximum at 552 nm. The electroluminescence (EL) maximum of double layer structured device (ITO/PEDOT:PSS/Oxd-PPV/Al) appeared at 553 nm. Relative PL quantum yield of Oxd-PPV film is 3.6 times higher than that of MEH-PPV film. The HOMO and LUMO energy levels of Oxd-PPV figured out from the cyclic voltammogram and the UV-visible spectrum are -5.32 and -3.09 eV, respectively, so that more balanced hole and electron injection efficiency can be expected compared to MEH-PPV. A double layer EL of Oxd-PPV has an maximum efficiency of 0.15 cd/A and maximum brightness of 464 cd/$m^2$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.1
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• pp.9-14
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• 2005

Mode missing of Fabry-Perot laser diodes has been modeled using the time domain laser model(TDLM). Fabry-Perot laser diodes that have structure of ripple in the waveguide of active layer or defects inside the active layer were simulated. For accurate simulation, the nonlinear effects were included such as spatial hole burning(SHB) and gain saturation. From the simulation results, it was founded that the defect inside the active layer in laser diodes has a strong influence on mode missing rather than the waveguide ripple. The simulation results are confirmed with the fabricated Fabry-Perot laser diodes by measuring the longitudinal mode spectra as a function of temperature from $25[^{\circ}C]\;to\;85[^{\circ}C]$.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 1996.06c
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• pp.852-862
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• 1996

This study was carried out to develop tools to detect defects of apple using machine vision. For the purpose, 6 kinds of frame for color images, R, G, B, h, S, and I frame, and a frame for near infra-red images (NIR frame) were tested first to select one which is useful to segment defect areas from apple images. After then, several methods to classify kind of defect for the segmented defect areas were developed and tested. Five kinds of apple defect -bruise , decay ,fleck worm hole and scar were investigated . The results are as follows: NIR frame was selected as the best one among the 7 kinds of image frame, and R, G and I frames showed favourable result to segment areas of apple defect. Various features of the segmented defect areas were measured to classify the defect areas. Eight kids of feature of the areas-size, roundness, axes length ratio, mean and variance of pixel values, variance of real part of spectrum, mean and variance of power spectrum resulted from spacial ourier transform were observed for the segmented defect areas in the selected 4 frames. then procedures to classify defects using the features were developed for the 4 frames and tested with 75-113 defects on apples. The test resulted that NIR and I frames showed high accuracies to classify the kind of defect as 77% and 76% , respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.317-320
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/Al(B) aNd glass substrate/ITO/TPD/Eu(TTA)$_3$(Phen)/A1Q$_3$/Al (C) structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and tris(8-hydroxyquinoline) Aluminum (AlQ$_3$) as an electron transporting layer. Etectroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped-charge-limited current model with I-V characteristics.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.61.1-61.1
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• 2011

We have performed simultaneous observations at 22GHz and 43GHz on AGNs hosted by elliptical galaxies using KVN radio telescope. We have constructed the sample, based on two major surveys in radio and optical band, i.e. Faint Images of the Radio Sky at Twenty-Centimeters (FIRST) and Sloan Digital Sky Survey (SDSS) DR7, respectively. We restricted the redshift range 0.01 < z < 0.06 and the absolute magnitude Mr < -19.4 in order to satisfy volume limited sample. We also checked clear detection of four distinctive emission lines ([NII], [OIII], $H{\alpha}$, $H{\beta}$) so as to utilize on BPT diagram, distinguishing AGNs from star-forming galaxies. Elliptical galaxies have been selected by visual inspection making use of SDSS optical images. Then, we cross-matched the elliptical galaxies with FIRST detections. About 35% of the galaxies have been detected throughout KVN observations. We derive spectral index, applying the flux of different radio frequencies from FIRST (1.4GHz) and KVN (22GHz) and classify into steep, flat or inverted spectrum. We have found that most of the detected galaxies have flat spectrum while the rest of them have steep spectrum. This implies that a number of detected galaxies might have compact structure associated with the central region of the galaxies. The relation between black hole mass and radio luminosity has shown relatively tighter correlation in high frequency than in low frequency, which confirms that high frequency in radio band is appropriate to study the center of the galaxies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Nuclear Engineering and Technology
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• v.43 no.6
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• pp.567-572
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• 2011

A sensitivity analysis of the methods used to evaluate the transport properties of a CdZnTe detector was performed using two different radiations (${\alpha}$ particle and gamma-ray) emitted from an $^{241}Am$ source. The mobility-lifetime products of the electron-hole pair in a planar CZT detector ($5{\times}5{\times}2\;mm^3$) were determined by fitting the peak position as a function of biased voltage data to the Hecht equation. To verify the accuracy of these products derived from ${\alpha}$ particles and low-energy gamma-rays, an energy spectrum considering the transport property of the CZT detector was simulated through a combination of the deposited energy and the charge collection efficiency at a specific position. It was found that the shaping time of the amplifier module significantly affects the determination of the (${\mu}{\tau}$) products; the ${\alpha}$ particle method was stabilized with an increase in the shaping time and was less sensitive to this change compared to when the gamma-ray method was used. In the case of the simulated energy spectrum with transport properties evaluated by the ${\alpha}$ particle method, the peak position and tail were slightly different from the measured result, whereas the energy spectrum derived from the low-energy gamma-ray was in good agreement with the experimental results. From these results, it was confirmed that low-energy gamma-rays are more useful when seeking to obtain the transport properties of carriers than ${\alpha}$ particles because the methods that use gamma-rays are less influenced by the surface condition of the CZT detector. Furthermore, the analysis system employed in this study, which was configured by a combination of Monte Carlo simulation and the Hecht model, is expected to be highly applicable to the study of the characteristics of CZT detectors.