• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.351-351
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• 2008

• 한국광학회:학술대회논문집
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• 한국광학회 1997년도 Advance Program of 14th optics andquantum Electronics conference, 1997제14 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.17-17
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• 1997

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.18-18
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• 1998

(No Abstract.see/full/text)

• 한국안광학회지
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• 제12권1호
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• pp.85-90
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• 2007

안경렌즈의 무반사 코팅물질로 사용되는 황화아연(Zinc Sulphide : ZnS)의 단일박막을 실리콘과 슬라이드 유리 기판위에 스핀코팅방법으로 증착하였다. 박막 증착 후 변입사각분광타원계(VASE : Variable Angle Spectroscopic Ellipsometer)를 사용하여 1.5~5.0 eV 광 에너지 영역에서 타원 각(ellipsometry angle) ${\Delta}$, ${\Psi}$를 측정하였다. 이 측정결과들을 Jellison Modine 분산관계식을 사용하여 최적맞춤하고, 매개변수들을 구하여 박막의 광학상수인 굴절계수 $n({\lambda})$와 소광계수 $k({\lambda})$를 결정하였다.

• 한국진공학회지
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• 제18권1호
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• pp.60-65
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• 2009

본 연구에서는 분광타원분석법을 이용하여 최근 주목 받고 있는 microwave dielectric materials 인 $BaSm_2Ti_4O_{12}$ 박막의 광 특성을 $0.92{\sim}8.6\;eV$ 에너지 영역에서 분석하였다. 광역 에너지영역에서 측정이 가능한 Vacuum Ultra Violet spectroscopic ellipsometer를 사용하여 시료의 광 스펙트럼을 측정 하였으며, 측정된 스펙트럼으로부터 $BaSm_2Ti_4O_{12}$ 박막의 광 특성을 얻기 위하여 Tauc-Lorentz 분산 함수를 이용하였고, 고 에너지 영역대의 새로운 피크구조 (structure) 를 최초로 발견하였다.

• 한국광학회지
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• 제13권3호
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• pp.215-222
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• 2002

광기록매체용 Ge-Sb-Te다층박막 성장과정을 in-situ 타원계를 사용하여 실시간으로 모니터하여 각 층의 두께를 제어하고 성장된 Ge-Sb-Te 다층박막을 ex-site 분광타원법으로 확인하였다. 보호층인 ZnS-SiO$_2$와 기록층인 Ge$_2$Sb$_2$Te$_{5}$을 단결정실리콘 기층 위에 스퍼터링 방법으로 각각 성장시키면서 구한 타원상수 성장곡선을 분석하여 성장에 따르는 보호층의 균일성 및 기록 층의 밀도변화를 파악하고 이를 기초로 하여 Ge-Sb-Te광기록 다층박막의 두께를 정밀하게 제어하였다. Ge$_2$Sb$_2$Te$_{5}$ 단층박막 시료의 복소굴절율은 eX-Situ 분광타원분석을 통하여 구하였다. 제작된 다층구조는 설정된 다층구조인 ZnS-SiO$_2$(1400$\AA$)$\mid$ GST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$)와 각 층의 두께 및 전체 두께에서 1.5% 이내에서 일치하는 정확도를 보여주었다.주었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.1932-1938
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• 2003

We have applied spectroscopic ellipsometry to investigate $high-{\kappa}$ dielectric thin films and correlate their optical properties with fabrication processes, in particular, with high temperature annealing. The use of high-k dielectrics such as $HfO_{2}$, $Ta_{2}O_{5}$, $TiO_{2}$, and $ZrO_{2}$ as the replacement for $SiO_{2}$ as the gate dielectric in CMOS devices has received much attention recently due to its high dielectric constant. From the characteristics found in the pseudo-dielectric functions or the Tauc-Lorentz dispersions, the optical properties such as optical band gap, polycrystallization, and optical density will be discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.240-242
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• 1994

Spectroscopic ellipsometry(SE) was employed to characterize the Si/$Si_{1-x}Ge_x$ heterostructure. The dielectric function spectrum of $Si_{1-x}Ge_x$ at an arbitrary x value in the spectral range of $1.5{\sim}4.5\;eV$ was computed by EMA (effective medium approximation) model using the available optical constants measured at a number of fixed x values of Ge composition. The thickness and the Ge composition of $Si_{1-x}Ge_x$ measured by SE was compared with those measured by RBS. DC bias effect on the $E_2$ peak of dielectric function spectra was studied.

• Current Optics and Photonics
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• 제7권4호
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• pp.428-434
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• 2023

The compensators used in spectroscopic ellipsometers are usually assumed to be ideal linear waveplates. In reality, however, they are elliptical waveplates, because they are usually made by bonding two or more linear waveplates of different materials with slight misalignment. This induces systematic error when they are modeled as linear waveplates. We propose an improved calibration method based on an optical model that regards an elliptical waveplate as a combination of a circular waveplate (rotator) and a linear waveplate. The method allows elimination of the systematic error, and the residual error of optic axis measurement is reduced to 0.025 degrees in the spectral range of 450-800 nm.

• Advances in nano research
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• 제5권3호
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• pp.261-279
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• 2017

Spectroscopic investigation of Si quantum dots (Si-QDs) embedded in silicon nitride was performed over a broad stoichiometry range to optimize light emission. Plasma-enhanced chemical vapor deposition was used to grow the $SiN_x$ films on Si (001) substrates. The film composition was controlled via the flow ratio of silane ($SiH_4$) and ammonia ($NH_3$) in the range of R = 0.45-1.0 allowed to vary the Si excess in the range of 21-62 at.%. The films were submitted to annealing at $1100^{\circ}C$ for 30 min in nitrogen to form the Si-QDs. The properties of as-deposited and annealed films were investigated using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, Raman scattering and photoluminescence (PL) methods. Si-QDs were detected in $SiN_x$ films demonstrating the increase of sizes with Si excess. The residual amorphous Si clusters were found to be present in the films grown with Si excess higher than 50 at.%. Multi-component PL spectra at 300 K in the range of 1.5-3.5 eV were detected and nonmonotonous varying total PL peak versus Si excess was revealed. To identify the different PL components, the temperature dependence of PL spectra was investigated in the range of 20-300 K. The analysis allowed concluding that the "blue-orange" emission is due to the radiative defects in a $SiN_x$ matrix, whereas the "red" and "infrared" PL bands are caused by the exciton recombination in crystalline Si-QDs and amorphous Si clusters. The nature of radiative and no radiative defects in $SiN_x$ films is discussed. The ways to control the dominant PL emission mechanisms are proposed.