• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.61-66
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• 2002

A method for designing antireflection (AR) and antistatic (AS) coating layer by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR coating is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The poly(3,4-ethylenedioxythiophene) which has the surface resistivity of 10$^4$Ω/$\square$ is used as a conductive layer. Optical constant of each ARAS coating layers such as refractive index and optical thickness were measured by 7he spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the risible region. The reflectance of ARAS films on glass substrate was below 1 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• Bulletin of the Korean Chemical Society
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• 제5권3호
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• pp.108-112
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• 1984

Interactions between metal ions and chitosan in solution were studied by spectroscopic and viscometric measurements. $Cu^{++}$-chitosan complex exhibited an absorption band at 265 nm, whereas D-glucosamine complex showed one at 245 nm. The difference in ${\lambda}_{max}$ was attributed to the different amine to $Cu^{2+}$ ratios of the complexes, that is, 2 : 1 for chitosan and 1 : 1 for D-glucosamine. The molar absorptivities and binding constants of the complexes were evaluatatled. The binding of $Cu^{2+}$ to chitosan was cooperative near pH 5, and both intra- and intermolecular chelations depending on chitosan and $Cu^{2+}$concentrations were observed, The intermolecular chelation was stabilized by addition of salts. The cooperative intermolecular chelation of $Ni^{++}$ was also observed at pH 6.2. No significant binding of other divalent ions was observed. The reported high adsorption abilities of chitosan particles for these ions were attributed to the deposition of metal hydroxide aggregates in pores of chitosan particles rather than chelation to amine groups.

• Journal of Applied Biological Chemistry
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• 제57권4호
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• pp.347-352
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• 2014

Pueraria mirifica 뿌리를 실온에서 70% EtOH 수용액으로 추출하고 이 추출물을 EtOAc 분획, n-BuOH 분획, $H_2O$ 분획으로 나누었다. EtOAc 분획에 대하여 silica gel, octadecyl silica, 및 Sephadex LH-20 c.c.를 반복 실시하여 4종의 화합물을 분리, 정제하였다. Nuclear magnetic resonance, infrare, 및 mass spectrometry의 spectroscopic data를 해석하여, 화합물 1-4를 각각 megastigm-5-en-3,9-diol, linarionoside B, 3,5,6,9-tetrahydroxy-megastigm-7-ene 및 3,4,9-trihydroxymegastigma-5,7-diene으로 구조를 결정하였다. 화합물 1-4 모두 P. mirifica에서는 이번에 처음으로 분리된 화합물이다.

• Journal of Radiation Protection and Research
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• 제41권2호
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• pp.167-171
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• 2016

Background: TlBr is of considerable technological importance for radiation detection applications where detecting high-energy photons such as X-rays and ${\gamma}$-rays are of prime importance. However, there were few reports on investigating optical properties of TlBr itself for deeper understandings of this material and for making better radiation detection devices. Thus, in this paper, we report on the optical characterizations of TlBr single crystals. Spectroscopic ellipsometry (SE) and photoluminescence (PL) measurements at RT were performed for this work. Materials and Methods: A 2-inch TlBr single crystalline ingot was grown by using the vertical Bridgman furnace. SE measurements were performed at RT within the photon energy range from 1.1 to 6.5 eV. PL measurements were performed at RT by using a home-made PL system equipped with a 266 nm-laser and a spectrometer. Results and Discussion: Dielectric responses from SE analysis were shown to be slightly different among the different samples possibly due to the different structural/optical properties. Also from the PL measurements, it was observed that the peak intensities of the middle samples were significantly higher than those of the other two samples. With the given values for permittivity of free space (${\varepsilon}_0=8.854{\times}10^{-12}F{\cdot}m^{-1}$), thickness (d = 1 mm), and area ($A=10{\times}10mm^2$) of the TlBr sample, capacitances of TlBr were 6.9 pF (at $h{\nu}=3eV$) and 4.4 pF (at $h{\nu}=6eV$), respectively. Conclusion: SE and PL measurement and analysis were performed to characterize TlBr samples from the optical perspective. It was observed that dielectric responses of different TlBr samples were slightly different due to the different material properties. PL measurements showed that the middle sample exhibited much stronger PL emission peaks due to the better material quality. From the SE analysis, optical, dielectric constants were extracted, and calculated capacitances were in the few pF range.

• 한국자기학회지
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• 제7권4호
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• pp.191-195
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• 1997

DC magnetron sputtering 방법에 의해 $Co_{84}$H $f_{16}$ 박막 (1300 .angs. , 2150 .angs. )을 제작하였다. 박막의 자기적 특성을 조사하기 위해서 J-band (7.42 GHz) 마이크로파 영역의 강자성 공명 (ferromagnetic resonance) 장치를 이용하였다. 측정된 공명 흡수선의 주 모드(main mode)로부터 계산된 분광학적 분리상수 g 값은 1300 .angs. , 2150 .angs. 일 때 각각 2.06과 2.07이었으며, 상온에서의 유효 자화(4 .pi. $M_{eff}$)값은 10385 emu/$cm^{3}$,10770 emu/$cm^{3}$였다. 자기 이방성을 조사하기 위해 VSM(vibrating sample magnetometer)을 이용하여 측정된 포화자화(4 .pi. $M_{s}$ )값은 16409 emu/$cm^{3}$와 14222 emu/$cm^{3}$였다. 유효 이방성 자기장 $H_{A}$ (effective anisotropy field)과 일축 이방성상수 $K_{u}$ (uniaxial anisotropy constant)는 각각 6024 Oe, 3452 Oe와 3.93 * $10^{6}$ erg/$cm^{3}$, 1.95 * $10^{6}$erg/$cm^{3}$였다. 77K에서 상온까지 온도에 따른 유효 포화 자화(4 .pi. $M_{eff}$)값을 측정하였으며, 포화자화의 온도의존성은 Bloch 법칙을 잘 만족시켰다. 이 포화자화곡선을 최적화하여 Bloch 상수 B, C를 구하였고, 77K에서 0K까지 외삽법으로 구한 $M_{eff}$(0)는 각각 894 erg/$cm^{3}$, 891 erg/$cm^{3}$였으며, 스핀파 경도 상수 D값과 교환 경도 상수 $A_{eff}$는 각각 148 meV .angs. $^{2}$, 103.8 meV .angs. $^{2}$와 1.77 * $10^{-6}$ erg/cm, 0.67 * $10^{-6}$ erg/cm 였다.다.

• 한국광학회지
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• 제18권5호
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• pp.351-361
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• 2007

마그네트론 스퍼터링 방법을 사용하여 광기록 매체인 GST 박막과 보호층인 $ZnS-SiO_2$ 박막 또는 $Al_2O_3$ 박막을 c-Si 기판위에 증착한 뒤 in-situ 타원계를 사용하여 상변화 광기록층인 GST 시료의 타원상수 온도의존성을 실시간으로 측정한 결과 $300^{\circ}C$ 이상의 온도에서 GST의 고온 타원상수는 가열 환경 및 보호층의 종류에 따라 큰 차이를 보여주었다. 가열 환경 및 보호층의 종류에 따라 GST의 고온 타원상수가 달라지는 원인인 $1{\sim}2$시간의 긴 승온시간을 줄이기 위해 Phase-change Random Access Memory(PRAM) 기록기를 사용하였고 수십 ns 이내의 짧은 시간 내에 순간적으로 GST 시료를 가열 및 냉각하였다. GST층이 손상되지 않고 결정화 및 고온 열처리가 되는 PRAM 기록기의 기록모드와 레이저출력 최적조건을 찾았으며 다층박막 구조에서 조사되는 레이저 에너지가 광기록층인 GST에 흡수되는 양과 이웃하는 층으로 전파되는 양을 열확산방정식으로 나타내고 이를 수치해석적으로 풀어 레이저출력과 GST 박막의 최고 온도와의 관계를 구하였다. 지름이 1um 정도인 레이저스폿을 대략 $0.7{\times}1.0mm^2$의 면적내에 촘촘히 기록한 다음 고온 열처리된 GST 시료의 분광타원데이터를 500 um의 빔 크기를 가지는 마이크로스폿 분광타원계를 사용하여 구하고 그 복소굴절률을 결정하였다. In-site 타원계를 사용할 때에 가열 환경 보호층 물질의 영향을 크게 받은 GST의 고온 복소굴절률은 PRAM 기록기를 사용하였을 때에는 가열환경이나 보호층의 종류에 무관하게 안정된 값을 보여주었다 Atomic Force Microscope(AFM)과 Scanning Electron Microscopy(SEM)을 통해 관찰한 GST 다층박막시료의 고온 열처리 전후 표면미시거칠기 변화도 PRAM 기록기를 사용할 때에는 in-situ 타원계를 사용할 때보다 1/10 정도의 크기를 보여주어 PRAM 기록기와 분광타원계를 사용하여 결정한 GST의 고온광학물성의 신뢰성을 확인하여 주었다.

• 대한화학회지
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• 제33권2호
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• pp.156-163
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• 1989

사염화탄소 용액중에서 thiopropionamide(TPA)와 N,N-dimethylalkylamides(DMF, DMA, DMP)간의 수소결합에 관한 열역학적 상수를 구하기 위하여 TPA의 근적외선 영역의 흡수띠 중에서 $ν_a+amide II$조합띠를 사용하여 5${\sim}$55$^{\circ}C$ 범위에서 실험하였다. TPA 단위체와 수소결합을 하고 있는 TPA의 혼합 흡수띠를 Lorentzian-Gaussian product function을 사용하여 개개의 띠로 분리하였다. 컴퓨터로 분해하여 얻은 개개의 흡수띠의 면적을 사용하여 단위체 및 1 : 1 복합체의 농도를 계산하였고 이로부터 평형상수를 구하였다. 열역학적 상수들은 온도의존 흡수띠를 분석하여 구하였다. TPA와 DMF, DMA 및 DMP간의 1 : 1 복합체의 ${\Delta}$$H^{\circ}$는 각각 -12.5, -13.5, -14.1kJ/mol이었고.${\Delta}$$S^{\circ}$는 각각 -15.2, -17.9, -22.3kJ/mol${\cdot}$deg이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.360-360
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• 2012

Zn-Sn-O (Zinc-Tin-Oxide; ZTO) thin films have been gaining extensive academic and industrial attentions owing to a semiconducting channel materials applicable to large-sized flat-panel displays. Due to the constituent oxides i.e., ZnO and SnO2, the resultant Zn-Sn-O thin films possess artificially controllable bandgaps and transmittances especially effective in the visible regime. The current approach employed RF sputtering in depositing the Zn-Sn-O thin films onto glass substrates at ambient conditions. This work places its main emphases on the electrical/optical features which are closely related to the combinations of processing variables. The electrical characterizations are performed using dc-based current-voltage characteristics and ac-based impedance spectroscopy. The optical constants, i.e., refractive index and extinction coefficient, are calculated through spectroscopic ellipsometry along with the estimation of bandgaps. The charge transport of the deposited ZTO thin films is based on electrons characteristic of n-type conduction. In addition to the basic electrical/optical information, the delicate manipulation of n-type conduction is indispensible in diversifying the industrial applications of the ZTO thin films as active devices in information and energy products. Ultimately, the electrical properties are correlated to the processing variables along with the underlying mechanism which largely determines the electrical and optical properties.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.537-542
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• 2011

Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.

• Journal of the Optical Society of Korea
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• 제18권4호
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• pp.359-364
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• 2014

We report parameters that allow the dielectric functions ${\varepsilon}={\varepsilon}_1+i{\varepsilon}_2$ of $AlAs_xSb_{1-x}$ alloys to be calculated analytically over the entire composition range $0{\leq}x{\leq}1$ in the spectral energy range from 0.74 to 6.0 eV by using the dielectric function parametric model (DFPM). The ${\varepsilon}$ spectra were obtained previously by spectroscopic ellipsometry for x = 0, 0.119, 0.288, 0.681, 0.829, and 1. The ${\varepsilon}$ data are successfully reconstructed and parameterized by six polynomials in excellent agreement with the data. We can determine ${\varepsilon}$ as a continuous function of As composition and energy over the ranges given above, and ${\varepsilon}$ can be converted to complex refractive indices using a simple relationship. We expect these results to be useful for the design of optoelectronic devices and also for in situ monitoring of AlAsSb film growth.