• The Plant Pathology Journal
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• v.35 no.3
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• pp.200-207
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• 2019

Fusarium head blight (FHB) is a devastating wheat disease with a significant economic impact. Fhb1 is the most important large effect and stable QTL for FHB resistance. A pore-forming toxin-like (PFT) gene was recently identified as an underlying gene for Fhb1 resistance. In this study, we developed and validated a PFT-based Kompetitive allele specific PCR (KASP) marker for Fhb1. The KASP marker, PFT_KASP, was used to screen 298 diverse wheat breeding lines and cultivars. The KASP clustering results were compared with gelbased gene specific markers and the widely used linked STS marker, UMN10. Eight disagreements were found between PFT_KASP and UMN10 assays among the tested lines. Based on the genotyping and sequencing of genes in the Fhb1 region, these genotypes were found to be common with a previously characterized susceptible haplotype. Therefore, our results indicate that PFT_KASP is a perfect diagnostic marker for Fhb1 and would be a valuable tool for introgression and pyramiding of FHB resistance in wheat cultivars.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.9
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• pp.32-39
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• 2003

Pulse electrochemical machining process with high or low current density may produce a non-lustrous surface on workpiece surface. The usual polishing process to remove a black layer from the surface has been hand polish the part. But the milli-to-micro meter scale structure formed by the electrochemical machining process may be destroyed while polishing process. The application of ultra short voltage pulses based on the analysis of electrical double layer charging process allows high resolution electrochemical machining and polishing. This technique was based on the specific polarization resistance from the comparison of ideal and experimental potential variation during short voltage pulses.

• Journal of IKEEE
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• v.22 no.3
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• pp.565-569
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• 2018

For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

• ETRI Journal
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• v.37 no.5
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• pp.951-960
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• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.457-461
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• 1996

An optimum design methodology for the power MOSFET's with a predetermined mask is proposed and verified by comparing with the results of MEDICI simulation and the data of commercially available devices. Optimization is completed by determining a doping concentration and a thickness of the epitaxial layer which satisfy a specific voltage and current rating requirements as well as a minimum on-resistance for the mask set. The commercial HEX-1 mask set with a die area of $40.4{\times}10^{-3}\;cm^2$ and a T0-220 package has the on-resistance of $1.5{\Omega}$ at 200 V/2.5 A rating while the M-1 mask from this study exhibits $0.6{\Omega}$ on-resistance at 200 V/6 A. The 60 % reduction in the on-resistance and 58 % enhancement in the current rating have been obtained by the proposed method.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.516-520
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• 2007

Indium tin oxide, which is used as transparent conducting layer in flexible device, is deposited on PET film by a magnetron sputtering in 300 mm wide roll-to-roll process (vacuum web coating). Sheet resistance, specific resistance and transmittance is differed by sputtering parameters such as working pressures, oxygen partial pressure, and thickness of ITO layer. ITO layer is deposited about 90 nm at roll speed of 0.24 m/min and its sputtering power is 3 kW. From the XRD spectrum deposited ITO layer is verified as amorphous. Under working pressure varied from $3{\times}10^{-4}\;Torr$ to $2{\times}10^{-3}\;Torr$, sheet resistance is lowest at the working pressure of $1{\times}10^{-3}\;Torr$ and its value is from $110\;{\Omega}/{\square}$ to $260\;{\Omega}/{\square}$ at the thickness of 90 nm. Oxygen partial pressure also varies sheet resistance and is optimized at the regime from 0.2% ($1.8{\times}10^{-6}\;Torr$) to 0.6% ($6{\times}10^{-6}\;Torr$). In this oxygen partial pressure sheet resistance is lower than $150\;{\Omega}/{\square}$. As ITO layer thickness increases, sheet resistance decreases down to $21\;{\Omega}/{\square}$ and specific resistance is about $7.5{\times}10.4{\Omega}cm$ in 340 nm thickness ITO layer. Transmittance is measured at the wavelength of 550 nm and is about 90% for 180 nm thickness ITO/PET.

• Journal of Welding and Joining
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• v.31 no.6
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• pp.27-31
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• 2013

Magnesium alloy is used on parts of aircraft and electronic equipment because of the highest specific strength among the common metal materials. Recently, studies about appling magnesium alloy sheet to automotive bodies are on the increase rapidly. For application to automotive bodies, researches about characteristics of resistance spot welding of magnesium alloy sheet are essential. Magnesium alloy has low boiling point, so getting sound bead shape is difficult when appling varies welding processes. Resistance spot welding is also particular about setting optimum welding conditions because of spatter generation, pores and cracks occurrence in nugget. And life of electrodes is very short because of alloying with copper that main material of electrodes. This requires frequent dressing and replacement of electrodes and decrease in productivity of resistance spot welding on magnesium alloy. Therefore in this study, for effective analysis of changes in tensile shear load and nugget size during electrode life test, evaluate detail characteristics of resistance spot welding on magnesium alloy sheet using dome type electrode.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.25 no.2
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• pp.87-104
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• 1989

Recently, with the tendency of more lightening, high-strength and high-speed in the marine industries such as marine structures, ships and chemical plants, the use of the aluminium Alloy is rapidly enlarge and there occurs much interest in the study of corrosion fatigue crack characteristics. In this paper, the initiation of surface crack and the propagation characteristics on the base metal and weld zone of 5086-H116 Aluminium Alloy Plate which is one of the Al-Mg serious alloy(A5000serious) used most when building the special vessels, were investigated by the plane bending corrosion fatigue under the environments of marine, air and applying cathodic protection. The effects of various specific resistances on the initiation, propagation behavior of corrosion fatigue crack and corrosion fatigue life in the base metal and heat affected zone were examined and its corrosion sensitivity was quantitatively obtained. The effects of corrosion on the crack depth in relation to the uniform surface crack length were also investigated. Also, the structural, mechanical and electro-chemical characteristics of the metal at the weld zone were inspected to verify the reasons of crack propagation behavior in the corrosion fatigue fracture. In addition, the effect of cathodic protection in the fracture surface of weld zone was examined fractographically by Scanning Electron Microscope(S.E.M.). The main results obtained are as follows; (1) The initial corrosion fatigue crack sensitibity under specific resistance of 25Ω.cm% show 2.22 in the base metal and 19.6 in the HEZ, and the sensitivity decreases as specific resistance increases (2) By removing reinforcement of weldment, the initiation and propagation of corrosion crack in the HAZ are delayed, and corrosion fatigue life increases. (3) As specific resistance decreases, the sensitivity difference of corrosion fatigue life in the base metal and HAZ is more susceptible than that of intial corrosion fatigue crack. (4) Experimental constant, m(Paris' rule) in the marine environment is in the range of about 3.69 to 4.26, and as specific resistance increases, thje magnitude of experimental constant, also increases and the effect by corrosion decreases. (5) Comparing surface crack length with crack depth, the crack depth toward the thickness of specimen in air is more deeply propagated than that in corrosion environment. (6) The propagation particulars of corrosion fatigue crack for HAZ under initial stress intensity factor range of $\Delta$k sub(li) =27.2kgf.mm super(-3/2) and stress ratio of R=0 shows the retardative phenomenon of crack propagation by the plastic deformation at crack tip. (7) Number of stress cycles to corrosion fatigue crack initiation of the base metal and the welding heat affected zone are delayed by the cathodic protection under the natural sea water. The cathodic protection effect for corrosion fatigue crack initiation is eminent when the protection potential is -1100 mV(SCE). (8) When the protection potential E=-1100 mV(SCE), the corrosion fatigue crack propagation of welding heat affected zone is more rapid than that of the case without protection, because of the microfissure caused by welding heat cycle.

• Journal of IKEEE
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• v.25 no.3
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• pp.467-472
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• 2021

Stable operation of semiconductor devices is needed even at high temperatures. Among the structures of semiconductor devices, the area that can cause unstable electrical responses at high temperatures is the contact layer between the metal and the semiconductor. In this study, the effect of annealing conditions included in the process of forming a contact layer of nickel silicide(NiSix) on a p-type SiC layer on the specific contact resistance of the contact layer and the total resistance between the metal and the semiconductor was investigated. To this end, a series of electrodes for TLM (transfer length method) measurements were patterned on the 4 inch p-type SiC layer under conditions of changing annealing temperature of 1700 and 1800 ℃ and annealing time of 30 and 60 minutes. As a result, it was confirmed that the annealing conditions affect the resistance of the contact layer and the electrical stability of the device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1140-1143
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• 2002

This work describes the effect of conducting composite on the characteristics of electric double layer capacitor. The cell, which was fabricated with conducting composite consisted of 50 wt.% of SPB and 50 wt.% of VGCF, exhibits the higher specific capacitance, the lower resistance and the better rate capability than those of the cells fabricated with each single electronic conductor. These enhanced properties could be related with the dense structure of electrode.