• Korean Journal of Materials Research
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• v.13 no.9
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• pp.567-571
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• 2003

We investigate vanadium (V)-based Ohmic contacts on n-GaN ($N_{d}$=$2.0${\times}$10^{18}$ $cm^{-3}$ ) as a function of annealing temperature. It is shown that the V (60 nm) contacts become Ohmic with specific contact resistances of $10^{-3}$ $- 10^{-4}$ Ω$\textrm{cm}^2$ upon annealing at 650 and $850^{\circ}C$. The V(20 nm)/Ti(60 nm)/Au(20 nm)contacts produce very low specific contact resistances of $2.2 ${\times}$ 10^{-5}$ and$ 4.0${\times}$10^{-6}$ Ω$\textrm{cm}^2$ when annealed at 650 and $850{\circ}C$, respectively. A comparison shows that the use of the overlayers (Ti/Au) is very effective in improving Ohmic property. Based on the current-voltage measurement, Auger electron spectroscopy, glancing angle X-ray diffraction, and X-ray photoemission spectroscopy results, the possible mechanisms for the annealing temperature dependence of the Ohmic behavior of the V-based contacts are described and discussed.d.

• Journal of Advanced Marine Engineering and Technology
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• v.12 no.1
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• pp.37-45
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• 1988

A calculating method of transient temperature distribution due to spot welding of thin plates is studied in this paper. Considering the contact stress between upper and lower plate and temperature-dependence of specific resistance and elastic limit of base metal, the model of calorific density of heat source was decided. Using 2-dimensional polar coordinates system, the governing equation of heat transfer was developed. The thermal cycles of various points were recorded using C-A thermocouples during spot welding procedure for mild steel plates of 1mm thickness, and those results were compared with the results of calculations presented in this paper.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.1
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• pp.189-205
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• 1996

The twin-roll type strip continuous casting process(or direct rolling process) of steel materials is characterized by two rotating water cooled rolls receiving a steady supply of molten metal which solidifies onto the rolls. A solidification analysis of molten metal considering phase transformation and thermofluid is performed using finite diffefence method with curvilinear coordinate to reduce computing time and molten region analysis with arbitrary shape. An enthalpy-specific heat method is used to determine the temperatures inthe roll and the steel. The temperature distribution of cooling roll is calculated using two dimensional finite element method, because of complex roll shape due to cooling hole in rolls and improvemnt accuracy of calculation result. The energy equaiton of cooling roll is solved simultanuously with the conservation equaiton of molten metal in order to consider heat transfer through the cooling roll. The calculated roll temperature is compared to experimental results and the heat transfer coefficient between cooling roll surface and rolling material(steel) is also determined from comparison of measured roll temperature and calculated temperature.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.98-99
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• 2007

This study has successfully demonstrated the direct fabrication of polymer resistors using ink-jet printing technology as an alternative patterning to traditional photolithography. The polymer resistors were fabricated just by two layer processes using a ink-jet printer (DMP-2800, Fujifilm Dimatix). First, resistive materials was patterned by a ink-jet printing with the desired width and length. Next, resistor fabrication was completed by printing metal contact pads on the both sides of the polymer resistor. We used poly (3,4-ethylene dioxythiophene) poly(styrenesulfonate)(PEDOT:PSS) for the resistor material and a nano-sized silver colloid for the metal contact pads. We characterized the electrical properties of PEDOT:PSS by measuring sheet resistance and specific resistance on a glass substrate. From analysis of the measured resistances, the electrical resistances of the polymer resistors linearly increased as a function of printed width and length of resistors. The accuracy of the fabricated polymer resistor showed about $0.6{\sim}2.5%$ error for the same dimensions.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1378-1380
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• 2001

Ohmic contacts have been fabricated on p-type 4H-SiC using Pt/Ti. Low resistivitf Ohmic contacts of Pt/Ti to p-type 4H-SiC were investigated. Specific contact resistances were measured using the transmission line model method, and the physical properties of the contacts were examined using x-ray diffraction, scanning electron microscopy. Ohmic behavior with linear current-voltage characteristics was observed following anneals at $900^{\circ}C$ for 90sec at a pressure of $3.4{\times}10^{-5}$ Torr. The Pt/Si/Ti films was measured lower value of the specific contact resistance by the annealing process, and the contact resistances were improved more than one order compared to Ti contact the annealed sample. Scanning electron microscopy shows that the Pt layer effectively reduce the oxidation of Ti films. And results are obtained as $4.6{\times}10^{-4}$ ohm/$cm^2$ for a Pt/Ti metal structure after a vacuum annealing at $900^{\circ}C$ for 90sec. Titanium has a relatively high melting point, thus Ti-based metal contacts were attempted in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.237-238
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• 2008

Electrical properties of Pd/Zn/Pd/Au contacts to p-InP were investigated as function of the V/III ratio of p-InP. P-type InP was made by the Zn diffusion into InP and activation process with rapid thermal annealing (RTA) measurement. After activation, the hole concentration was two orders of magnitude higher than that of the sample having only diffusion process. According to transmission line method (TLM) results, the specific contact resistance of p-InP was lower as used InP having the lower V/III ratio. The experimental results represent that the diffusion of Zn in undoped InP deeply related to the equilibrium between interstitials and substitutional Zn is established via indium interstitials.

• Composites Research
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• v.37 no.3
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• pp.190-196
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• 2024

The bipolar plate is a crucial element of the vanadium redox flow battery (VRFB) as it serves as both the electrical conduit and the structural support for the cell within the VRFB stack. Although, the graphite material is primarily used for the bipolar plate due to its excellent electrical conductivity, a significant limitation of performance of the VRFB is present due to high interfacial contact resistance (ICR) arises between the electrode and bipolar plate in the cell stack. This study aims to develop an integrated electrode-bipolar plate assembly that will address the limitations of the ICR. The integrated assembly was constructed using a single carbon felt with thermoplastic and thermoset polymers utilizing hot press method. Experimental results verify that the bipolar plate assembly exhibits reduced area specific resistance (ASR) due to the continuous electrical path. Additionally, from the charge/discharge cell test results, the integrated assembly shows improved cell performance. Therefore, the developed integrated electrode-bipolar plate assembly can serve as a substitute for the conventional bipolar plate and electrode assembly.

• Journal of Korean Association for Spatial Structures
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• v.10 no.4
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• pp.75-83
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• 2010

Laminated composite plates have shown their superiority over metals in applications requiring high specific strength, high specific modulus, and so on. Therefore, they have used in various industry. However, they have poor resistance to impact compared to typical metal materials. So, many researchers have investigated about impact behavior of laminated composite plate. To investigate impact behavior of laminated composite plate, we have to calculate contact force between impactor and laminated composite plate at the first. Impactor's equation of motion, plate's equation of motion and correlations for indentation were solved to know the contact force at the same time. In this study, low velocity impact behavior of composite plate was investigated using the finite element program which is involved the classical Hertzian law, Sun's law and Sun & Yang's experimental law and Sun & Tan's experimental law considering the stacking method.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.288-292
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• 1998

The p*-n ultra shallow junction diode with Co/Ti bilayer silicide was formed by ion implantation of $BF_{2}$ energy : 30KeV, dose : $5\times10^{15}cm^{-2}$] onto the n-well Si(100) region and RTA-silicidation of the evaporated Co($120\AA$)/Ti($40\AA$) double layer. The fabricated diode exhibited ideality factor of 1.06, specific contact resistance of $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$ and leakage current of $8.6\muA/\textrm{cm}^2$(-3V) under the reverse bias of 3V. The sheet resistance of silicided emitter region, the boron concentration at silicide/Si interface and the junction depth including silicide layer of ($500\AA$ were about $8\Omega\Box$, $6\times10^{19}cm^{-3}$, and $0.14\mu{m}$, respectively. In the fabrication of diode, the application of Co/Ti bilayer silicide brought improvement of ideality factor on the current-voltage characteristics as well as reduction of emitter sheet resistance and specific contact resistance, while it led to a little increase of leakage current.