• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.54-60
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• 2007

This paper proposes a built-in-self-repair (BISR) structure using 2-dimensional spare memory to effectively self-repair faults of an embedded memory. In case of multiple faults in the same row (column) of an embedded memory, the previous method using 1-D spare column (row) memory needs the same number of spare memory columns (rows) as the number of faults to self-repair them. while the new method using 2-D spare memory needs only one spare row (column) to self-repair them. Also, the virtual divided memory is adopted to be able to self-repair using not a full spare column memory but the only partial spare column memory corresponding to the faults. A self-repair circuit with $64\times1-bit$ core memory and $2\times8$ 2-D spare memory is designed. And the circuit includes a built-in-self-test block using the 13N March algorithm. The circuit has been implemented using the $0.25{\mu}m$ MagnaChip CMOS process and has $1.1\times0.7mm^2$ chip area with 10,658 transistors.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.30-36
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• 2010

In recent memories, repair is an unavoidable method to maintain its yield and quality. Although many word oriented memories as well as embedded memories in system-on-chip (SOC) consists of multiple local memory blocks with a global spare architecture, most of previous studies on built-in redundancy analysis (BIRA) algorithms have focused on single memory block with a local spare architecture. In this paper, a new BIRA algorithm for multiple blocks with a global spare architecture is proposed. The proposed BIRA is basd on CRESTA which is able to achieve optimal repair rate with almost zero analysis time. In the proposed BIRA, all repair solutions for local memory blocks are analyzed by local analyzers which belong to each local memory block and then compared sequentially and judged whether each solution can meet the limitation of the global spare architecture or not. Experimental results show that the proposed BIRA achieves much faster analysis speed compared to previous BIRAs with an optimal repair rate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.73-79
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• 2009

With the advance of VLSI technology, the capacity and density of memories are rapidly growing. In this paper we proposed MRI (Memory built-in self Repair Imagination zone) as reallocation algorithm. All faulty cells of embedded memory are reallocated into the row and column spare memory. This work implements reallocation algorithm and BISR to verify its design.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.331-340
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• 2012

In the deep sub-micron ICs, growing amounts of on-die memory and scaling effects make embedded memories increasingly vulnerable to reliability and yield problems. Spare columns are often included in memories to repair defective cells or bit lines during production test. In many cases, the repair process will not use all spare columns. Schemes have been proposed to exploit these unused spare columns to store additional check bits which can be used to reduce the miscorrection probability for triple errors in single error correction-double error detection (SEC-DED). These additional check bits increase the dimensions of the parity check matrix (H-matrix) requiring extra area overhead. A method is proposed in this paper to efficiently fill the extra rows of the H-matrix on the basis of similarity of logic between the other rows. Optimization of the whole H-matrix is accomplished through logic sharing within a feasible operating time resulting in reduced area overhead. A detailed implementation using fuse technology is also proposed in this paper.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.23-29
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• 2010

This paper presents a method for constructing a memory system using defective memory chips comprising faulty storage blocks. The three-dimensional memory system introduced here employs a die-stacked structure of faulty memory chips. Signals lines passing through the through-silicon-vias (TSVs) connect chips in the defect tolerant structure. Defective chips are classified into several groups each group comprising defective chips having faulty blocks at the same location. A defect tolerant memory system is constructed using chips from different groups. Defect-free storage blocks from spare chips replace faulty blocks using additional routing circuitry. The number of spare chips for defect tolerance is $s={\ulcorner}(k{\times}n)/(m-k){\urcorner}$ to make a system defect tolerant for (n+s) chips with k faulty blocks among m independently addressable blocks.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.2
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• pp.50-60
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• 1997

Reconfiguration of a memory array using spare rows and columns has been known to be a useful technique to improve the yield. When the numbers of spare rows and scolumns are limited, respectively, the repair problem is known to be NP-complete. In this paper, we propose the reconfiguration algorithm for an array of memory cells using faulty cel clustering, which removes rows and columns algrithm is the simplest reconfiguration method with the time complexity of $O(n^2)$, where n is the number of faulty cells, however the repair rate is very low. Whereas the exhaustive search algorithm has a high repair rate, but the time complexity is $O(2^n)$. The proposed algorithm provides the same repair rate as the exhaustive search algorithm for almost all cases and runs as fast as the greedy method. It has the time complexity of $O(n^3)$ in the worst case. We show that the propsed algorithm provides more efficient solutions than other algorithms using simulations.

• KIPS Transactions on Computer and Communication Systems
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• v.3 no.5
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• pp.129-140
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• 2014

BIST(Built-in self test) is to detect various faults of the existing memory and BIRA(Built-in redundancy analysis) is to repair detected faults by allotting spare. Also, BISR(Built-in self repair) which integrates BIST with BIRA, can enhance the whole memory's yield. However, the previous methods were suggested for RAM and are difficult to diagnose disturbance that is NAND-type flash memory's intrinsic fault when used for the NAND-type flash memory with different characteristics from RAM's memory structure. Therefore, this paper suggests a BISD(Built-in self diagnosis) to detect disturbance occurring in the NAND-type flash memory and to diagnose the location of fault, and BISR to repair faulty blocks.

• Journal of the Korea Society for Simulation
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• v.18 no.4
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• pp.59-66
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• 2009

This has been possible by integration techniques such as very large scale integration (VLSI) and wafer scale integration (WSI). Redundancy has been extensively used for manufacturing memory chips and to provide repair of these devices in the presence of faulty cells. If there are too many defects, the momory has to be rejected. But if there are a few defects, it will be more efficient and cost reducing for the company to use it by repairing. Therefore, laser-repair process is nedded for such a reason and redundancy analysis is needed to establish correct target of laser-repair process. The proposed CRA (Correlation Repair Algorithm) simulation, beyond the idea of the conventional redundancy analysis algorithm, aims at reducing the time spent in the process and strengthening cost competitiveness by performing redundancy analysis after simulating each case of defect.

• Proceedings of the KSR Conference
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• 2011.05a
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• pp.1440-1444
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• 2011

Memory-device is one of the auxiliary components of point-switch machine; connecting front-rod and tongue-rail. The right side and left side of memory-device are different from each other. When there would be a derailing accident of rolling stock or motor-car, the memory-device properly bends and protects the internal of point-switch machine. Memory-device is one of the important site maintenance spare parts. Memory-device for each of right and left side should be secured so that they can be installed on correct side during an exchange work. This study suggests the development of memory-device with different left and right side and the performance test of it. The study intends to contribute in the convenience improvement of maintenance by improving the unification of memory-device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.113-120
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• 2007

With the advance of VLSI technology, the capacity and density of memories is rapidly growing. In this paper we proposed reallocation algorithm. All faulty cell of embedded memory is reallocated into the row and column spare memory. This work implements reallocation algorithm and BISR to verify its design.