• Title/Summary/Keyword: Spacer thickness error

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A simulation study on the variation of virtual NMR signals by winding, bobbin, spacer error of HTS magnet

  • Kim, Junseong;Lee, Woo Seung;Kim, Jinsub;Song, Seunghyun;Nam, Seokho;Jeon, Haeryong;Baek, Geonwoo;Ko, Tae Kuk
    • Progress in Superconductivity and Cryogenics
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    • v.18 no.3
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    • pp.21-24
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    • 2016
  • Recently, production technique and property of the High-Temperature Superconductor (HTS) tape have been improved. Thus, the study on applying an HTS magnet to the high magnetic field application is rapidly increased. A Nuclear Magnetic Resonance (NMR) spectrometer requires high magnitude and homogeneous of central magnetic field. However, the HTS magnet has fabrication errors because shape of HTS is tape and HTS magnet is manufactured by winding HTS tape to the bobbin. The fabrication errors are winding error, bobbin diameter error, spacer thickness error and so on. The winding error occurs when HTS tape is departed from the arranged position on the bobbin. The bobbin diameter and spacer thickness error occur since the diameter of bobbin and spacer are inaccurate. These errors lead magnitude and homogeneity of central magnetic field to be different from its ideal design. The purpose of this paper is to investigate the effect of winding error, bobbin diameter error and spacer thickness error on the central field and field homogeneity of HTS magnet using the virtual NMR signals in MATLAB simulation.

Two-Dimensional Analysis of the Characteristics at Heterojunction of MODFET Using FDM (유한 차분법을 이용한 MODFET의 이차원적 해석)

  • Jung, Hak-Gi;Lee, Moon-Key;Kim, Bong-Ryul
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.11
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    • pp.1373-1379
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    • 1988
  • This paper describes a two-dimensional analysis of the potential distribution and electron concentration of the MODFET at channel using FDM. More exact analysis can be obtained by two-dimensional analysis which considers parasitic effects ignored in one-dimensional analysis. Using Poisson and Shrodinger equations, the potential distribution and the wave function are calculated within a constant error bound. As a result, the relations between the thickness of spacer, doping concentration of (n) AlGaAs layer, and the sheet density of the 2DEG (2 Dimensional Electron Gas) of MODFET at channel are suggested quantitively. The sheet density of the 2DEG is increased as the thickness of the spacer is decreased of the doping concentration of the (n)AlGaAs layer is lowered.

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